Article (Scientific journals)
SiGe growth using Si3H8 by low temperature chemical vapor deposition
Takeuchi, Shotaro; Nguyen, Ngoc Duy; Goossens, Jozefien et al.
2009In Thin Solid Films, 518 (6), p. 18
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Keywords :
SiGe; growth; CVD
Abstract :
[en] Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 $\,^ rc$C, trisilane (Si3H8) was used for their growth as an alternative Si precursor gas. Then, we compared the use of Si3H8 versus SiH4 for Si1−xGex growth in H2 and N2 as carrier gas by low temperature chemical vapor deposition. By using Si3H8 and controlling GeH4 flow rate, Si1−xGex growth with high growth rate and wide range of Ge concentration has been achieved compared to SiH4-based process. The growth rate and Ge concentration in Si1−xGex with Si3H8 grown at 600 $\,^ rc$C ranged from 11 to 74 nm/min and from 0 to 40%, respectively. The obtained growth rates with Si3H8 are between 1.5 and 6 times higher than for SiH4 at a given growth condition. Si3H8-based in-situ B- and C-doped Si1−xGex growth with high growth rate was also demonstrated
Disciplines :
Materials science & engineering
Author, co-author :
Takeuchi, Shotaro;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Goossens, Jozefien;  IMEC
Caymax, Matty;  IMEC
Loo, Roger;  IMEC
Language :
English
Title :
SiGe growth using Si3H8 by low temperature chemical vapor deposition
Publication date :
2009
Journal title :
Thin Solid Films
ISSN :
0040-6090
Publisher :
Elsevier Science
Volume :
518
Issue :
6
Pages :
S18
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 12 August 2010

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