Reference : SiGe growth using Si3H8 by low temperature chemical vapor deposition
Scientific journals : Article
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/68749
SiGe growth using Si3H8 by low temperature chemical vapor deposition
English
Takeuchi, Shotaro [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Goossens, Jozefien [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
Loo, Roger [IMEC > > > >]
2009
Thin Solid Films
Elsevier Science
518
6
S18
Yes (verified by ORBi)
International
0040-6090
[en] SiGe ; growth ; CVD
[en] Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 $\,^ rc$C, trisilane (Si3H8) was used for their growth as an alternative Si precursor gas. Then, we compared the use of Si3H8 versus SiH4 for Si1−xGex growth in H2 and N2 as carrier gas by low temperature chemical vapor deposition. By using Si3H8 and controlling GeH4 flow rate, Si1−xGex growth with high growth rate and wide range of Ge concentration has been achieved compared to SiH4-based process. The growth rate and Ge concentration in Si1−xGex with Si3H8 grown at 600 $\,^ rc$C ranged from 11 to 74 nm/min and from 0 to 40%, respectively. The obtained growth rates with Si3H8 are between 1.5 and 6 times higher than for SiH4 at a given growth condition. Si3H8-based in-situ B- and C-doped Si1−xGex growth with high growth rate was also demonstrated
Researchers ; Professionals
http://hdl.handle.net/2268/68749
10.1016/j.tsf.2009.10.047
http://dx.doi.org/10.1016/j.tsf.2009.10.047

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Open access
Takeuchi_Nguyen_TSF_518_S18_2009_author_postprint.pdfAuthor postprint1.46 MBView/Open

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.