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Schmeits Marcel

Département de physique > Physique des solides, interfaces et nanostructures

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Main Referenced Co-authors
Nguyen, Ngoc Duy  (5)
Baert, Bruno  (4)
Cerica, Delphine  (1)
Gupta, Somya (1)
Simoen, Eddy (1)
Main Referenced Keywords
GeSn (4); interface states (3); admittance spectroscopy (2); admittance (1); Defect level (1);
Main Referenced Disciplines
Physics (3)
Electrical & electronics engineering (2)

Publications (total 5)

The most downloaded
176 downloads
Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium. https://hdl.handle.net/2268/174386

The most cited

5 citations (OpenCitations)

Baert, B., Schmeits, M., & Nguyen, N. D. (2014). Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Applied Surface Science, 291, 25-30. doi:10.1016/j.apsusc.2013.09.022 https://hdl.handle.net/2268/156365

Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium.

Baert, B., Schmeits, M., & Nguyen, N. D. (2014). Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Applied Surface Science, 291, 25-30. doi:10.1016/j.apsusc.2013.09.022
Peer Reviewed verified by ORBi

Baert, B., Gupta, S., Schmeits, M., Simoen, E., & Nguyen, N. D. (June 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Poster presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan.

Baert, B., Schmeits, M., & Nguyen, N. D. (May 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Paper presentation]. European Materials Research Society (E-MRS) 2013 Spring Meeting.

Nguyen, N. D., & Schmeits, M. (2002). The photorefractive effect at large modulation depth in semiconductors with multiple defect levels. Applied Physics. B, Lasers and Optics, 74, 35. doi:10.1007/s003400100764
Peer Reviewed verified by ORBi

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