Publications et communications de Ngoc Duy Nguyen

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1. Thèses et mémoires

1.b. Thèses de doctorat

Nguyen, N. D. (2004). Electrical characterization of III-nitride heterostructures by thermal admittance spectroscopy. Unpublished doctoral thesis, Université de Liège, ​​Belgium.

1.c. Mémoires de second cycle (licence, master, DES, DEA)

Nguyen, N. D. (1998). Contributions théorique et numérique à l'étude de la photoréfractivité dans les semi-conducteurs II-VI. Unpublished master thesis, Université de Liège, ​​Belgium.

2. Brevets

Nguyen, N. D., Loo, R., & Caymax, M. (2010). Method for manufacturing a junction. United States of America: McDonnell Boehnen Hulbert & Berghoff LLP.
The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly, one aspect ...

3. Articles dans des revues scientifiques avec peer reviewing

3.a. À portée internationale

En tant que premier ou dernier auteur

Baert, B., Schmeits, M., & Nguyen, N. D. (2014). Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Applied Surface Science, 291, 25-30.
Using a custom-made numerical simulation tool, we performed a systematic study of the energy distribution of the interface trap density in a GeSn MOS structure and of their effect on the electrical ...
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2013). Impedance Spectroscopy of GeSn-based Heterostructures. ECS Transactions, 50(9), 481-490.
In this work, we investigated the electrical characteristics of p-GeSn/p-Ge and p-GeSn/n-Ge structures obtained by simulation of the basic semiconductor equations. We developed a numerical formalism based on a ...
Nguyen, N. D., Wang, G., Brammertz, G., Leys, M., Waldron, N., Winderickx, G., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Buttita, F., O'Neil, B., Féron, O., Lindner, J., Schulte, F., Schineller, B., Heuken, M., & Caymax, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. ECS Transactions, 33, 933.
We have deposited III-V alloys on 200 mm Si miscut wafers with an oxide pattern. The selective epitaxial growth (SEG) of GaAs in large windows defined by SiO2 lines on a thick strained-relaxed Ge buffer layer ...
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Yang, L., Goossens, J., Moussa, A., Clarysse, T., Richard, O., Bender, H., Zaima, S., Sakai, A., Loo, R., Lin, J. C., Vandervorst, W., & Caymax, M. (2009). Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology. Thin Solid Films, 518(6), 48.
We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both ...
Nguyen, N. D., Loo, R., & Caymax, M. (2008). Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application. Applied Surface Science, 264, 6072.
We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to ...
Nguyen, N. D., Schmeits, M., & Loebl, H.-P. (2007). Determination of charge carrier transport properties in organic devices by admittance spectroscopy : application to hole mobility in α-NPD. Physical Review. B : Condensed Matter, 75, 75307.
Hole mobility in N,N′-diphenyl-N,N′-bis(1-naphtylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) is evaluated by electrical characterization in the ac regime. The frequency-dependent complex admittance and ...
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. ECS Transactions, 10, 151.
The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We ...
Nguyen, N. D., & Schmeits, M. (2006). Numerical simulation of impedance and admittance of OLEDs. Physica Status Solidi : A. Applications and Materials Science, 203, 1901.
The electrical characteristics of organic light-emitting devices are calculated for the dc and ac regimes by numerically solving the basic semiconductor equations under steady-state and small-signal conditions ...
Schmeits, M., & Nguyen, N. D. (2005). Small-signal characteristics of organic semiconductors with continuous energy distribution of traps. Physica Status Solidi A. Applications and Materials Science, 202(2764).
The electrical characteristics of organic light emitting devices containing a continuous distribution of trap states in the forbidden gap are obtained by numerically solving the basic semiconductor equations ...
Nguyen, N. D., & Schmeits, M. (2002). The photorefractive effect at large modulation depth in semiconductors with multiple defect levels. Applied Physics B : Lasers & Optics, 74, 35.
The photorefractive effect in semiconducting mate- rials with multiple defects is studied in the case of modulation depth m = 1. The basic equations are Poisson's equation and the continuity equations for ...
Nguyen, N. D., Schmeits, M., Germain, M., Schineller, B., & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy. Physica Status Solidi C. Current Topics in Solid State Physics, 288.
Experimental results of electrical characterization of InGaN/GaN multiple-quantum-well electrolu- minescence test structures obtained by thermal admittance spectroscopy are presented. The stu- died GaN : Mg/5 ...
Nguyen, N. D., Germain, M., Schmeits, M., Evrard, R., Schineller, B., & Heuken, M. (2001). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers. Journal of Crystal Growth, 230, 596.
The ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the ...
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes. Journal of Applied Physics, 90, 985.
Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on ...
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. Physica Status Solidi B. Basic Research, 228, 385.
Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature ...

En tant que co-auteur

Dewalque, J., Nguyen, N. D., Colson, P., Krins, N., Cloots, R., & Henrist, C. (2014). Stability of templated and nanoparticles dye-sensitized solar cells : photovoltaic and electrochemical investigation of degradation mechanisms at the photoelectrode interface. Electrochimica Acta, 115(1), 478-486.
A key issue in the commercialization of dye-sensitized solar cells is to maintain high efficiency and long lifetime. As reported in the literature, dye-sensitized solar cells are stable under visible light ...
You, S., Decoutere, S., Nguyen, N. D., Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., Loo, R., & De Meyer, K. (2012). Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition. Thin Solid Films, 520, 3345.
In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth ...
Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. ECS Transactions, 45, 115.
We report on the fabrication on InGaAs/InP implant free quantum well (IFQW) n-MOSFET devices on 200mm wafers in a Si CMOS processing environment. The starting virtual InP substrates were prepared by means of ...
Wang, G., Leys, M., Nguyen, N. D., Loo, R., Richard, O., Bender, H., Heyns, M., & Caymax, M. (2011). Growth of high quality InP layers in STI trenches on miscut Si (001) substrates. Journal of Crystal Growth, 315, 32.
In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (0 0 1) substrates 6° miscut toward (1 1 1) using a thin Ge buffer layer. We ...
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Windericks, G., Sioncke, S., De Jaeger, B., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffmann, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. ECS Transactions, 35, 299.
We report on the fabrication of MOS capacitors on 200 mm virtual GaAs substrates using a Si CMOS processing environment. The fabricated capacitors were comparable to those processed on bulk GaAs material ...
Wang, G., Leys, M., Nguyen, N. D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M., & Caymax, M. (2010). Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates. Journal of the Electrochemical Society, 157(11), 1023.
In this paper, we report a comprehensive investigation of InP selective growth in shallow trench isolation (STI) structures on Si(001) substrates 6° off-cut toward (111). Extended defect-free InP layers were ...
Schineller, B., Nguyen, N. D., & Heuken, M. (2010). Growth of III/V materials on large area silicon. ECS Transactions, 28, 233.
Continuous miniaturization has been at the heart of advances in modern semiconductor electronics. However, further scalability has seen its limits for conventional CMOS technology due to short channel effects ...
Bogdanowicz, J., Dortu, F., Clarysse, T., Vandervorst, W., Rosseel, E., Nguyen, N. D., Shaughnessy, D., Salnick, A., & Nicolaides, L. (2010). Non-destructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves. Journal of Vacuum Science & Technology : Part B, 28(1), 1C1.
The ITRS Roadmap highlights the electrical characterization of the source and drain extension regions as a key challenge for future complimentary-metal-oxide-semiconductor technology. Presently, an accurate ...
Wang, G., Nguyen, N. D., Leys, M., Loo, R., Richard, O., Brammertz, G., Meuris, M., Heyns, M., & Caymax, M. (2010). Selective epitaxial growth of InP in STI trenches on off-axis Si(001) substrates. ECS Transactions, 27, 959.
We report high quality InP layers selectively grown in shallow trench isolation structures on 6 degree offcut Si (001) substrates capped with a thin Ge buffer layer. The Ge layer was used to reduce the thermal ...
Takeuchi, S., Nguyen, N. D., Goossens, J., Caymax, M., & Loo, R. (2009). SiGe growth using Si3H8 by low temperature chemical vapor deposition. Thin Solid Films, 518(6), 18.
Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 $\,^ rc$C, trisilane (Si3H8) was used for their ...
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., & Caymax, M. (2009). Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition. IEEE Electron Device Letters, 30, 1173.
This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells ...
Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Nguyen, N. D., Loo, R., & Mantl, S. (2009). Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95, 144103.
In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a 􏰀-impurity layer grown in the Si ...
You, S., Van Huylenbroeck, S., Nguyen, N. D., Sibaja-Hernandez, A., Venegas, R., Van Wichelen, K., Decoutere, S., & De Meyer, K. (2009). Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs. Thin Solid Films, 518(6), 68.
This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant ...
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. ECS Transactions, 16, 495.
Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to ...
Reiche, M., Moutanabbir, O., Himcinschi, C., Christiansen, S., Erfurth, E., Gösele, U., Mantl, S., Buca, D., Zhao, Q., Loo, R., Nguyen, N. D., Muster, F., & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation. ECS Transactions, 16, 211.
Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain is introduced in CMOS devices by process-induced stressors allowing the local generation of tensile or ...
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. ECS Transactions, 6, 339.
SSOI substrates were successfully fabricated using He+ ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide ...
Verstraeten, D., Launay, J.-C., Delaye, P., Nguyen, N. D., Germain, M., Viraphong, O., & Lemaire, P. (2003). Photorefractive ZnTe grown by traveling heater method. Trends in Optics and Photonics, 87, 159.
Schmeits, M., Nguyen, N. D., & Germain, M. (2001). Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes. Journal of Applied Physics, 89, 1890.
The effect of the deep acceptor Mg on the electrical characteristics of p-doped GaN Schottky diodes is analyzed. The theoretical study is based on the numerical resolution of the basic semiconductor equations ...
El Yacoubi, M., Evrard, R., Nguyen, N. D., & Schmeits, M. (2000). Electrical conduction by interface states in semiconductor heterojunctions. Semiconductor Science & Technology, 15, 341.
Electrical conduction in semiconductor heterojunctions containing defect states in the interface region is studied. As the classical drift-diffusion mechanism cannot in any case explain electrical conduction ...

5. Ouvrages

5.b. En tant qu’éditeur scientifique ou directeur de publication

Hartmann, J.-M., Loo, R., Nguyen, N. D., Houssa, M., & Caymax, M. (Eds.). (2012). Proceedings of the 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7). Elsevier.

8. Conférences scientifiques dans des universités et centres de recherche

Nguyen, N. D. (2013, April 10). Electrical characterization by admittance spectroscopy : from impurity identification to interface analysis in nanostructures. Paper presented at Coloquio do Departamento de Física da Universidade Federal de São Carlos.
Nguyen, N. D. (2010, December 16). Electrical characterization of semiconductor heterostructures by admittance spectroscopy. Paper presented at Séminaire invité, Grenoble, France.
Electrical characterization by admittance spectroscopy enables the study of interface properties of semiconductor structures such as p-n junctions, Schottky diodes, light-emitting systems, photodiodes, solar ...
Nguyen, N. D. (2006, September 11). Admittance spectroscopy of semiconductor systems. Paper presented at Seminar (invited), Aachen, Germany.
Nguyen, N. D. (2006). Admittance spectroscopy of semiconductor structures. Paper presented at Seminar (Invited), Leuven, Belgium.
Admittance spectroscopy is a powerful tool for electrical characterization of semiconductor structures such as p-n junctions, Schottky diodes, light-emitting systems or quantum wells. It consists in monitoring ...
Nguyen, N. D., & Schmeits, M. (2005, December 12). Admittance spectroscopy of OLEDs. Paper presented at OLED Colloquium, Aachen, Germany.
Nguyen, N. D. (2001). Experimental and theoretical study of Mg-doped GaN Schottky structures by thermal admittance spectroscopy. Paper presented at Seminar on Gallium Nitride (invited), Eindhoven, Netherlands.

9. Colloques et congrès scientifiques

9.a. Sur invitation

À portée internationale

Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of III-V on Si for High-Mobility CMOS. Paper presented at 4th International SiGe Technology and Device Meeting (ISTDM), Berkeley, USA.
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Winderickx, G., Sioncke, S., De Jaeger, B., Wang, G., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffman, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. 219th ECS Meeting (ECS). Pennington, USA: ECS.
As CMOS continues to scales to more advanced nodes, new higher mobility channel materials will have to be introduced as an alternative to Si in order to meet power and performance requirements [1]. III-V and ...
Loo, R., Hikavyy, A., Vincent, B., Wang, G., Vanherle, W., Gencarelli, F., Nguyen, N. D., Rosseel, E., Souriau, L., Rondas, D., Dekoster, J., & Caymax, M. (2010, September 23). Epitaxial Si, SiGe and Ge for high-performance devices. Paper presented at ASM User Meeting, Munich, Germany.
Caymax, M., Bellenger, F., Brammertz, G., Dekoster, J., Delabie, A., Loo, R., Merckling, C., Nguyen, N. D., Nijns, L., Sioncke, S., Vincent, B., Wang, G., Vandervorst, W., & Heyns, M. (2010, April 08). Substrates and Gate Dielectrics: the Materials Issue for sub-22 nm CMOS Scaling. Paper presented at MRS Spring 2010 Meeting, San Francisco, USA.
Performance scaling of CMOS technologies beyond the 22 nm node will depend on the successful introduction of high mobility materials such as germanium and compound semiconductors on silicon substrates, which ...
Nguyen, N. D., Wang, G., Waldron, N., Winderickx, G., Brammertz, G., Leys, M., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Caymax, M., Féron, O., Buttitta, F., O'Neil, B., Lindner, J., Schulte, F., Schineller, B., & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. 218th ECS Meeting, 2010. Pennington, USA: ECS.
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Loo, R., Goossens, J., Moussa, A., Clarysse, T., Caymax, M., & Vandervorst, W. (2009). Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology. International Semiconductor Device Research Symposium, 2009. Los Alamitos, USA: IEEE.
The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 ...
Vandervorst, W., Eyben, P., Mody, J., Jurczak, M., Nguyen, N. D., Takeuchi, S., Leys, F., Loo, R., Caymax, M., & Everaert, J.-L. (2008). Conformal doping of FINFET's : a fabrication and metrology challenge. Paper presented at 17th International Conference in Ion Implantation Technology, Monterey, USA.

9.b. Sur proposition personnelle

Publiées

À portée internationale
Avec peer reviewing
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. 222nd ECS Meeting, 2012. ECS.
In this work, we investigated the electrical characteristics of p-GeSn/p-Ge and p-GeSn/n-Ge structures obtained by simulation of the semiconductor equations. We developed a numerical formalism based on a drift ...
Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. 221st ECS Meeting. Pennington, USA: ECS.
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Hellings, G., Vincent, B., Firrincieli, A., Sioncke, S., De Jaeger, B., Wang, G., Krom, R., Mitard, J., Wang, W.-E., Passlack, M., Heyns, M., Caymax, M., Meuris, M., Biesemans, S., & Hoffmann, T. (2010). III-V Devices for Advanced CMOS. 217th ECS Meeting. Pennington, USA: ECS.
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., Goossens, J., & Caymax, M. (2009). Zero-Bias Si Backward Diodes Detectors Incorporating P and B δ-Doping Layers Grown by Chemical Vapor Deposition. International Semiconductor Device Research Symposium, 2009. Los Alamitos, USA: IEEE.
For the first time, CVD-grown Si only backward diode detectors incorporating ¿doping planes were demonstrated. The best performance of curvature coefficient of 16 V-1 with a junction resistance of 14 k¿ was ...
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Loo, R., Goossens, J., Moussa, A., Clarysse, T., & Vandervorst, W. (2009). Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology. In S., Chiussi, P., Alpuim, J., Murota, P., Gonzalez, J., Serra, & B., Leon (Eds.), SiNEP 2009. 1st International Workshop on Si based nano-electronics and -photonics. NETBIBLO.
Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., You, S., Winderickx, G., Radisic, D., Lee, W., Ong, P., Vandeweyer, T., Nguyen, N. D., De Meyer, K., & Decoutere, S. (2009). A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009 (pp. 5-8). IEEE.
An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. 214th ECS Meeting, 2008. Pennington, USA: ECS.
Mantl, S., Buca, D., Zhao, Q., Holländer, B., Feste, S., Luysberg, M., Reiche, M., Gösele, U., Buchholtz, W., Wei, A., Horstmann, M., Loo, R., & Nguyen, N. D. (2007). Large current enhancement in n-MOSFETs with strained Si on insulator. International Semiconductor Device Research Symposium, 2007. Los Alamitos, USA: IEEE.
As scaling of the critical transistor dimensions below 65 nm has been slowed down, the implementation of novel materials, especially high mobility channel materials is most attractive to boost the transistor ...
Driussi, F., Esseni, D., Selmi, L., Schmidt, M., Lemme, M. C., Kurze, H., Buca, D., Mantl, S., Luysberg, M., Loo, R., Nguyen, N. D., & Reiche, M. (2007). Fabrication, characterization, and modeling of strained SOI MOSFETs with very large effective mobility. In IEEE (Ed.), 37th European Solid State Device Research Conference (ESSDERC) (pp. 315 - 318).
Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth ...
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. 211th ECS Meeting, 2007. Pennington, USA: ECS.
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. In F., Ponce & A., Bell (Eds.), ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors. Wiley-VCH.

Communications uniquement orales ou poster

À portée internationale
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (2014, June 03). Electrical characterization of pGeSn/nGe diodes. Paper presented at 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore.
I-V characteristics of pGeSn/nGe diodes have been measured and show very good properties. Simulations of the same structure are able to reproduce most of the observed behavior and point to the predominating ...
Amand, J., & Nguyen, N. D. (2013, December 03). Numerical simulation of the electrical characteristics of CIGS/CdS/ZnO solar cell heterostructures. Poster session presented at MRS fall meeting 2013, Boston, MA.
The electrical characteristics of CIGS-based solar cell heterostructure have been simulated by numerically solving the basic semiconductor equations by means of a finite differences method based on a ...
Amand, J., & Nguyen, N. D. (2013, September 17). Numerical simulation of the electrical characteristics of CIGS/CdS/ZnO solar cell heterostructures. Poster session presented at E-MRS 2013 Fall Meeting, Warsow, Poland.
The electrical characteristics of CIGS-based solar cell heterostructure have been simulated by numerically solving the basic semiconductor equations by means of a finite differences method based on a ...
Lagrange, M., Langley, D., Giusti, G., Collins, R., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (2013, September 16). Silver nanowire network : physical properties and effects of thermal treatments. Paper presented at European Materials Research Society (E-MRS) 2013 Fall Meeting.
Shimura, Y., Wang, W., Gencarelli, F., Vincent, B., Nieddu, T., Laha, P., Terryn, H., Stefanov, S., Chiussi, S., Van Campenhout, J., Nguyen, N. D., Vantomme, A., & Loo, R. (2013, September). Theoretical and experimental investigation of the GeSn bandgap. Paper presented at European Materials Research Society (E-MRS) 2013 Fall Meeting.
Wang, W., Shimura, Y., Nieddu, T., Gencarelli, F., Vincent, B., Nguyen, N. D., Vandervorst, W., & Loo, R. (2013, June 04). Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition. Paper presented at The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japon.
Gupta, S., Simoen, E., Asano, T., Nakatsuka, O., Gencarelli, F., Shimura, Y., Moussa, A., Loo, R., Zaima, S., Baert, B., Dobri, A., Nguyen, N. D., & Heyns, M. (2013, June 04). Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers. Paper presented at The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japon.
Shimura, Y., Wang, W., Nieddu, T., Gencarelli, F., Vincent, B., Laha, P., Terryn, H., Stefanov, S., Chiussi, S., Van Campenhout, J., Nguyen, N. D., Vantomme, A., & Loo, R. (2013, June 04). Bandgap Measurement by Spectroscopic Ellipsometry for Strained Ge1-xSnx. Paper presented at The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japon.
Baert, B., Gupta, S., Schmeits, M., Simoen, E., & Nguyen, N. D. (2013, June). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Poster session presented at The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan.
Baert, B., Schmeits, M., & Nguyen, N. D. (2013, May). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Paper presented at European Materials Research Society (E-MRS) 2013 Spring Meeting.
The semiconducting alloy germanium tin (GeSn) is expected to play an important role in the development of high mobility channel materials for next generation CMOS and optoelectronic devices. The two most ...
Dewalque, J., Nguyen, N. D., Henrist, C., Cloots, R., & Colson, P. (2013, March). Long term stability of TiO2 templated multilayer films used as high efficiency photoelectrode in liquid DSSCs. Poster session presented at Third International Conference on Multifunctional, Hybrid and Nanomaterials (HYMA 2013), Sorrento, Italie.
To our knowledge, the stability results reported in the literature only concern cells made from classical doctor-bladed or screen-printed nanoparticles films. This study focuses on the comparison of the ...
Langley, D., Giusti, G., Nguyen, N. D., & Bellet, D. (2013). Collection Efficiency and Design Requirements for Metallic Nanowire Networks in Solar Cells. Poster session presented at European Materials Research Society Spring Meeting (E-MRS Spring 2013), Strasbourg, France.
In using TCMs based on metallic nanowires it is important to determine the effect of nanowire geometry and spatial arrangement on the resulting network. To this end we have extensively simulated the effect of ...
Langley, D., Giusti, G., Consonni, V., Nguyen, N. D., Bellet, D., & Bréchet, Y. (2012, October 24). Electrical investigation of TCMs: role of structural defects and external stress. Paper presented at 4th International Symposium on Transparent Conductive Materials (TCM 2012), Hersonissos, Crete, Greece.
Baert, B., & Nguyen, N. D. (2012, June). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures. Poster session presented at "Jaszowiec" International School and Conference on the Physics of Semiconductors.
Baert, B., Truong, D. Y. N., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy. Poster session presented at 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, CA.
Truong, D. Y. N., Vertruyen, B., & Nguyen, N. D. (2011). Admittance spectroscopy study of NiGe contact on GeSn. Paper presented at 3rd EMMI/ FAME Master Research Workshop – Functionalized materials for a competitive and sustainable society, Louvain-la-Neuve, Belgium.
The direct gap semiconductor germanium tin (GeSn) is an attractive material for next-generation devices in nanoelectronics as well as in photovoltaic applications. However, its detailed electronic properties ...
Aazou, S., Ibral, A., Assaid, M., Baert, B., & Nguyen, N. D. (2011). New method for photovoltaic solar cell physical parameters extraction. Paper presented at Congrès International sur les Energies Renouvelables et l'Efficacité Energétique (CIEREE'2011), Fès, Maroc.
Photovoltaic energy is one of the most important renewable energies. This type of energy, unlike other energy sources, is clean, safe, and abundant. The photovoltaic solar energy is based on the conversion of ...
You, S., Decoutere, S., Nguyen, N. D., Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., Loo, R., & De Meyer, K. (2011). Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy. Paper presented at 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium.
Nguyen, N. D., Souriau, L., Shimizu, Y., Jiang, S., Rosseel, E., Everaert, J.-L., Delmotte, J., Moussa, A., Clarysse, T., Loo, R., Vandervorst, W., & Caymax, M. (2011). N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal. Paper presented at 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium.
Shimizu, Y., Nguyen, N. D., Jiang, S., Rosseel, E., Takeuchi, S., Everaert, J.-L., Loo, R., Vandervorst, W., & Caymax, M. (2010). Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices. Poster session presented at 5th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan.
Nguyen, N. D., Brammertz, G., Wang, G., Lismont, K., Dekoster, J., Degroote, S., Leys, M., Nollet, V., Caymax, M., Buttita, F., Féron, O., O'Neil, B., Lindner, J., Schulte, F., Schineller, B., & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor on large-area Si substrate for advanced logic CMOS technologies. Paper presented at E-MRS Spring Meeting, 2010; Symposium H : Post-Si CMOS electronic devices: the role of Ge and III-V materials, Strasbourg, France.
The continued downscaling of the metal-oxide semiconductor (MOS) transistor for sub-22 nm logic circuits with boosted performance will require the introduction of new channel materials with carrier mobility ...
Takeuchi, S., Nguyen, N. D., Goossens, J., Caymax, M., & Loo, R. (2009). Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition. Paper presented at 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA.
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., & Caymax, M. (2009). 200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD. Paper presented at 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA.
Loo, R., Iacopi, F., Vanherle, W., Rooyackers, R., Vandooren, A., Takeuchi, S., Nguyen, N. D., Doornbos, G., & De Gendt, S. (2009). SiGe tunnel field effect transistors: challenges for selective epitaxial growth. Paper presented at MRS Spring Meeting, 2009, San Francisco, USA.
Goossens, J., Berghmans, B., Franquet, A., Nguyen, N. D., Delmotte, J., Geenen, L., Richard, O., Bender, H., & Vandervorst, W. (2009). Depth resolution and surface transients in crystalline Silicon at ultra low energies. Poster session presented at 17th International Conference on Secondary Ion Mass Spectrometry (SIMS XVII), Toronto, Canada.
Vandooren, A., Rooyackers, R., Leonelli, D., Iacopi, F., De Gendt, S., Verhulst, A., Heyns, M., Kunnen, E., Nguyen, N. D., Demand, M., Ong, P., Lee, W., Moonens, J., Richard, O., Vandenberghe, W., & Groeseneken, G. (2009). A 35nm diameter vertical silicon nanowire short-gate tunnelFET. Paper presented at Nanotechnology Workshop, Kyoto, Japan.
A top-down integration scheme for silicon vertical nanowire (NW) tunnel field-effect transistors (TFETs) with a 35nm nanowire dimension and using state-of-the-art metal gate and high-k gate dielectric is ...
Hikavyy, A., Nguyen, N. D., Loo, R., Ryan, P., Wormington, M., & Hopkins, J. (2008). In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction. Poster session presented at 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan.
Takeuchi, S., Yang, L., Nguyen, N. D., Loo, R., Conard, T., Pourtois, G., Vandervorst, W., & Caymax, M. (2008). Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling. Poster session presented at 4th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan.
Nguyen, N. D., Leys, F., Takeuchi, S., Loo, R., Caymax, M., Eyben, P., & Vandervorst, W. (2008). Conformal ultra shallow junctions by vapor phase doping with boron. Poster session presented at 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan.
Buca, D., Trinkaus, H., Holländer, B., Loo, R., Nguyen, N. D., & Mantl, S. (2008). Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer. Paper presented at 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan.
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy. Paper presented at 8th International Conference on Atomic Layer Deposition (ALD), Bruges, Belgium.
Reiche, M., Moutanabbir, O., Himcinschi, C., Christiansen, S., Erfurth, E., Gösele, U., Mantl, S., Buca, D., Zhao, Q., Loo, R., Nguyen, N. D., Muster, F., & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation. Paper presented at 214th ECS Meeting, 2008, Honolulu, USA.
Nguyen, N. D., Loo, R., & Caymax, M. (2007). Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate. Paper presented at Fifth International Symposium on Control of Semiconductor Interfaces, Tokyo, Japan.
We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to ...
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. Paper presented at Analytical Techniques for Semiconductor Materials and Process Characterization (ALTECH), Munich, Germany.
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. Poster session presented at 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan.
Buca, D., Goryll, M., Holländer, B., Trinkaus, H., Mantl, S., Loo, R., & Nguyen, N. D. (2007). Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer. Paper presented at Materials Research Society Spring Meeting 2007, San Francisco, USA.
Mantl, S., Buca, D., Zhao, Q., Holländer, B., Feste, S., Luysberg, M., Reiche, M., Gösele, U., Buchholtz, W., Wei, A., Horstmann, M., Loo, R., & Nguyen, N. D. (2007). Strained Si-on-insulator for advanced CMOS devices. Poster session presented at 4th International Workshop on Future Information Processing Technology, Bologna, Italy.
Nguyen, N. D., Schmeits, M., Germain, M., Schineller, B., & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy. Poster session presented at International Workshop on Nitride Semiconductors, Aachen, Germany.
Nguyen, N. D., Germain, M., Schmeits, M., Evrard, R., Schineller, B., & Heuken, M. (2000). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers. Paper presented at 4th European GaN Workshop, Nottingham, UK.
Nguyen, N. D., & Schmeits, M. (1999). Numerical modelling of the photorefractive effect in II-VI semiconductors. Poster session presented at International Workshop on advances in Growth and Characterization of II-VI Semiconductors, Würzburg, Germany.
À portée nationale
Nguyen, N. D. (2012, April 23). Caractérisation électrique de films minces et d'hétérostructures pour applications photovoltaïques. Paper presented at Journée Scientifique des Comices ‘Energie solaire’ du WARE, Namur, Belgique.
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes. Poster session presented at Réunion Scientifique Générale de la Société Belge de Physique, Louvain, Belgium.
Nguyen, N. D., & Schmeits, M. (2000). Numerical modelling of the photorefractive effect in II-VI semiconductors. Poster session presented at Réunion Scientifique Générale de la Société Belge de Physique, Louvain-la-Neuve, Belgique.

11. Rapports

11.a. Rapports de recherche

Internes

Nguyen, N. D. (2009). Ultra-low p-type doping of epitaxial Si for CMOS imagers : Assessment of the background doping level of the CVD reactor (PR08.0599).
Nguyen, N. D. (2009). Heavy boron doping of epitaxial Si for TFET application : Non selective deposition (PR07.0390).
Nguyen, N. D. (2008). Low-temperature epitaxial growth of heavily-doped n-Si layers for the monocrystalline emitter in bipolar transistors.
Nguyen, N. D. (2008). Low-temperature epitaxial growth of heavily-doped n-Si and n-SiGe layers using trisilane as Si precursor gas for the monocrystalline emitter in bipolar transistors.
Nguyen, N. D., & Loo, R. (2008). Enhancement of the poly/mono growth rate ratio for BiCMOS application (PR07.0308). IMEC.
Nguyen, N. D. (2007). Heavy n-type doping of SiGe for SIMS calibration (PR06.0496).

11.b. Rapports d'expertise

Nguyen, N. D. (2012). Numerical simulation of P-OLEDs (35).

12. Documents pédagogiques

Nguyen, N. D., & Hoebeke, M. (2002). Physique expérimentale préparatoire aux sciences biomédicales y compris l'introduction mathématique aux sciences expérimentales : Fascicule de travaux dirigés (Université de Liège, PHYS0111-2 Bases physiques et mathématiques des sciences biomédicales).