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Sliti, N., Touihri, S., & Nguyen, N. D. (June 2023). Numerical modeling and analysis of AZO/Cu2O transparent solar cell with a TiO2 buffer layer. Engineering Research Express, 5 (2), 025013. doi:10.1088/2631-8695/accacf |
Fourneau, E., Nguyen, N. D., Palau, A., Arregi, J. A., Uhlir, V., Barrera, A., Sanchez, A., Bending, S., & Silhanek, A. (2023). Microscale metasurfaces for on-chip magnetic flux concentration. Advanced Materials Technologies. doi:10.1002/admt.202300177 |
Marinkovic, S., Abbey, E. A., Chaves, D. A. D., Collienne, S., Fourneau, E., Jiang, L., Xue, C., Zhou, Y. H., Ortiz, W. A., Motta, M., Nguyen, N. D., Volodin, A., Van De Vondel, J., & Silhanek, A. (April 2023). Effect of Moderate Electropulsing on Nb Multiterminal Transport Bridges. Physical Review Applied, 19 (5). doi:10.1103/PhysRevApplied.19.054009 |
Marinkovic, S., Fernández‐Rodríguez, A., Fourneau, E., Cabero, M., Wang, H., Nguyen, N. D., Gazquez, J., Mestres, N., Palau, A., & Silhanek, A. (2022). From Electric Doping Control to Thermal Defect Nucleation in Perovskites. Advanced Materials Interfaces, 2200953. doi:10.1002/admi.202200953 |
Jiang, L., Xue, C., Marinkovic, S., Fourneau, E., Xu, T.-Q., Cai, X.-W., Nguyen, N. D., Silhanek, A., & Zhou, Y.-H. (01 August 2022). Tunable domino effect of thermomagnetic instabilities in superconducting films with multiply-connected topological structures. New Journal of Physics, 24 (8), 083017. doi:10.1088/1367-2630/ac83e3 |
Sliti, N., Fourneau, E., Ratz, T., Touihri, S., & Nguyen, N. D. (2022). Mg-doped Cu2O thin films with enhanced functional properties grown by magnetron sputtering under optimized pressure conditions. Ceramics International. doi:10.1016/j.ceramint.2022.05.028 |
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Ratz, T., Nguyen, N. D., Brammertz, G., Vermang, B., & Raty, J.-Y. (2022). Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite. Journal of Materials Chemistry A. doi:10.1039/D1TA09620F |
Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (30 June 2021). Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites. Journal of Physics : Energy, 3 (3), 035005. doi:10.1088/2515-7655/abefbe |
Huynh, C. C., Evrard, R., & Nguyen, N. D. (14 April 2021). Trapping of Electrons around Nanoscale Metallic Wires Embedded in a Semiconductor Medium. Electronic Materials, 2, 82. doi:10.3390/electronicmat2020008 |
Fourneau, E., Silhanek, A., & Nguyen, N. D. (19 March 2021). Roadmap for the Design of All Ferromagnetic Four-Terminal Spin Valves and the Extraction of Spin Diffusion Length. Physical Review Applied, 15 (3), 034058. doi:10.1103/PhysRevApplied.15.034058 |
Resende, J., Nguyen, V.-S., Fleischmann, C., Bottiglieri, L., Brochen, S., Vandervorst, W., Favre, W., Jimenez, C., Deschanvres, J.-L., & Nguyen, N. D. (2021). Grain‐boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties. Scientific Reports, 11, 7788. doi:10.1038/s41598-021-86969-7 |
Fourneau, E., Silhanek, A., & Nguyen, N. D. (10 August 2020). Origin of the Giant Spin-Detection Efficiency in Tunnel-Barrier-Based Electrical Spin Detectors. Physical Review Applied, 14 (2), 024020. doi:10.1103/PhysRevApplied.14.024020 |
Lombardo, J., Collienne, S., Petrillo, A., Fourneau, E., Nguyen, N. D., & Silhanek, A. (12 November 2019). Electromigration-induced resistance switching in indented Al microstrips. New Journal of Physics, 21 (11), 113015. doi:10.1088/1367-2630/ab5025 |
Ratz, T., Brammertz, G., Caballero, R., Léon, M., Canulescu, S., Schou, J., Gütay, L., Pareek, D., Taskesen, T., Kim, D.-H., Kang, J.-K., Malerba, C., Redigner, A., Saucedo, E., Shin, B., Tampo, H., Timmo, K., Nguyen, N. D., & Vermang, B. (12 September 2019). Physical routes for the synthesis of kesterite. Journal of Physics : Energy, 1 (4). doi:10.1088/2515-7655/ab281c |
Periyannan, S., Manceriu, L., Nguyen, N. D., KLEIN, A., JAEGERMANN, W., Colson, P., Henrist, C., & Cloots, R. (2019). Influence of ZnO Surface Modification on the Photocatalytic Performance of ZnO/NiO Thin Films. Catalysis Letters, 1-12. doi:10.1007/s10562-019-02781-z |
Resende, J., Chaix-Pluchery, O., Rovezzi, M., Malier, Y., Renevier, H., Nguyen, N. D., Deschanvres, J.-L., & Jimenez, C. (April 2019). Resilience of Cuprous Oxide under Oxidizing Thermal Treatments via Magnesium Doping. Journal of Physical Chemistry C, 123 (14), 8663-8670. doi:10.1021/acs.jpcc.9b00408 |
Aghazadehchors, S., Nguyen, V. H., Munoz-Rojas, D., Jimenez, C., Rapenne, L., Nguyen, N. D., & Bellet, D. (2019). Versatility of bilayer metal oxide coatings on silver nanowire networks for enhanced stability with minimal transparency loss. Nanoscale, 11, 19969-19979. doi:10.1039/C9NR05658K |
Cossuet, T., Resende, J., Rapenne, L., Chaix-Pluchery, O., Jimenez, C., Renou, G., Pearson, A., Hoye, R., Blanc-Pelissier, D., Nguyen, N. D., Appert, E., Munoz-Rojas, D., Consonni, V., & Deschanvres, J.-L. (13 September 2018). ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self-Powered UV Photodetectors with Fast Response. Advanced Functional Materials, 28, 1803142. doi:10.1002/adfm.201803142 |
Khan, A., Nguyen, V. H., Munoz-Rojas, D., Aghazadehchors, S., Jimenez, C., Nguyen, N. D., & Bellet, D. (2018). Stability enhancement of silver nanowire networks with conformal ZnO coatings deposited by atmospheric pressure spatial atomic layer deposition. ACS Applied Materials and Interfaces, 10, 19208. doi:10.1021/acsami.8b03079 |
Langley, D., Lagrange, M., Nguyen, N. D., & Bellet, D. (2018). Percolation in networks of 1-dimensional objects: comparison between Monte Carlo simulations and experimental observations. Nanoscale Horizons, 3, 545-550. doi:10.1039/C8NH00066B |
Manceriu, L., Colson, P., Maho, A., Eppe, G., Nguyen, N. D., Labrugere, C., Rougier, A., Cloots, R., & Henrist, C. (15 May 2017). Straightforward prediction of the Ni1−xO layers stoichiometry by using optical and electrochemical measurements. Journal of Physics: D Applied Physics, 50, 225501 pp 1 to 12. doi:10.1088/1361-6463/aa6e71 |
Bellet, D., Lagrange, M., Sannicolo, T., Aghazadehchors, S., Nguyen, V. H., Langley, D., Munoz-Rojas, D., Jimenez, C., Bréchet, Y., & Nguyen, N. D. (May 2017). Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration. Materials, 10, 570. doi:10.3390/ma10060570 |
Brisbois, J., Gladilin, V. N., Tempere, J., Devreese, J. T., Moshchalkov, V. V., Colauto, F., Motta, M., Johansen, T. H., Fritzsche, J., Adami, O.-A., Nguyen, N. D., Ortiz, W. A., Kramer, R. B. G., & Silhanek, A. (March 2017). Flux penetration in a superconducting film partially capped with a conducting layer. Physical Review. B, 95, 94506. doi:10.1103/PhysRevB.95.094506 |
Sannicolo, T., Munoz-Rojas, D., Nguyen, N. D., Moreau, S., Celle, C., Simonato, J.-P., Bréchet, Y., & Bellet, D. (October 2016). Direct Imaging of the Onset of Electrical Conduction in Silver Nanowire Networks by Infrared Thermography: Evidence of Geometrical Quantized Percolation. Nano Letters, 16, 7046-7053. doi:10.1021/acs.nanolett.6b03270 |
Avelas Resende, J., Jimenez, C., Nguyen, N. D., & Deschanvres, J.-L. (July 2016). Magnesium-doped cuprous oxide (Mg:Cu2O) thin films as a transparent p-type semiconductor. Physica Status Solidi A. Applications and Materials Science, 213 (9), 2296–2302. doi:10.1002/pssa.201532870 |
Brisbois, J., Motta, M., Avila Osses, J., Shaw, G., Devillers, T., Dempsey, N. M., Veerapandian, S. K. P., Colson, P., Vanderheyden, B., Vanderbemden, P., Ortiz, W. A., Nguyen, N. D., Kramer, R. B. G., & Silhanek, A. (06 June 2016). Imprinting superconducting vortex footsteps in a magnetic layer. Scientific Reports, 6, 27159. doi:10.1038/srep27159 |
Nguyen, N. D., Evrard, R., & Stroscio, M. (June 2016). Polar interface phonons in ionic toroidal systems. Journal of Physics: Condensed Matter, 28 (34), 345301. doi:10.1088/0953-8984/28/34/345301 |
Brisbois, J., Adami, O.-A., Avila Osses, J., Motta, M., Ortiz, W. A., Nguyen, N. D., Vanderbemden, P., Vanderheyden, B., Kramer, R. B. G., & Silhanek, A. (23 February 2016). Magnetic flux penetration in Nb superconducting films with lithographically defined micro-indentations. Physical Review. B, 93 (5), 054521. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (August 2015). Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. Solid-State Electronics, 110, 65-70. doi:10.1016/j.sse.2015.01.007 |
Toussaint, C., Tran, H. S., Colson, P., Dewalque, J., Vertruyen, B., Gilbert, B., Nguyen, N. D., Cloots, R., & Henrist, C. (2015). Combining mesoporosity and Ti-doping in hematite films for water splitting. Journal of Physical Chemistry. C, Nanomaterials and interfaces, 119 (4), 1642-1650. doi:10.1021/jp5091476 |
Wirths, S., Stange, D., Pampillon, M.-A., Tiedemann, A., Mussler, G., Fox, A., Breuer, U., Baert, B., San Andres, E., Nguyen, N. D., Hartmann, J.-M., Ikonic, Z., Mantl, S., & Buca, D. (2015). High‐k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors. ACS Applied Materials and Interfaces, 7, 62-67. doi:10.1021/am5075248 |
Brisbois, J., Vanderheyden, B., Colauto, F., Motta, M., Ortiz, W. A., Fritzsche, J., Nguyen, N. D., Hackens, B., Adami, O.-A., & Silhanek, A. (07 October 2014). Classical analogy for the deflection of flux avalanches by a metallic layer. New Journal of Physics, 16 (10), 103003. doi:10.1088/1367-2630/16/10/103003 |
Baert, B., Schmeits, M., & Nguyen, N. D. (2014). Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Applied Surface Science, 291, 25-30. doi:10.1016/j.apsusc.2013.09.022 |
Dewalque, J., Nguyen, N. D., Colson, P., Krins, N., Cloots, R., & Henrist, C. (2014). Stability of templated and nanoparticles dye-sensitized solar cells : photovoltaic and electrochemical investigation of degradation mechanisms at the photoelectrode interface. Electrochimica Acta, 115 (1), 478-486. doi:10.1016/j.electacta.2013.11.009 |
Langley, D., Lagrange, M., Giusti, G., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (2014). Metallic nanowire networks: effects of thermal annealing on electrical resistance. Nanoscale, 6, 13535. doi:10.1039/c4nr04151h |
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2013). Impedance Spectroscopy of GeSn-based Heterostructures. ECS Transactions, 50 (9), 481-490. doi:10.1149/05009.0481ecst |
Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. ECS Transactions, 45, 115. doi:10.1149/1.3700460 |
You, S., Decoutere, S., Nguyen, N. D., Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., Loo, R., & De Meyer, K. (2012). Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition. Thin Solid Films, 520, 3345. doi:10.1016/j.tsf.2011.10.079 |
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Windericks, G., Sioncke, S., De Jaeger, B., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffmann, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. ECS Transactions, 35, 299. doi:10.1149/1.3569922 |
Wang, G., Leys, M., Nguyen, N. D., Loo, R., Richard, O., Bender, H., Heyns, M., & Caymax, M. (2011). Growth of high quality InP layers in STI trenches on miscut Si (001) substrates. Journal of Crystal Growth, 315, 32. doi:10.1016/j.jcrysgro.2010.07.039 |
Wang, G., Leys, M., Nguyen, N. D., Loo, R., Brammertz, G., Richard, O., Bender, H., Dekoster, J., Meuris, M., Heyns, M., & Caymax, M. (September 2010). Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates. Journal of the Electrochemical Society, 157 (11), 1023. doi:10.1149/1.3489355 |
Bogdanowicz, J., Dortu, F., Clarysse, T., Vandervorst, W., Rosseel, E., Nguyen, N. D., Shaughnessy, D., Salnick, A., & Nicolaides, L. (2010). Non-destructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves. Journal of Vacuum Science and Technology. Part B, 28 (1), 1C1. doi:10.1116/1.3269737 |
Nguyen, N. D., Wang, G., Brammertz, G., Leys, M., Waldron, N., Winderickx, G., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Buttita, F., O'Neil, B., Féron, O., Lindner, J., Schulte, F., Schineller, B., Heuken, M., & Caymax, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. ECS Transactions, 33, 933. doi:10.1149/1.3487625 |
Schineller, B., Nguyen, N. D., & Heuken, M. (2010). Growth of III/V materials on large area silicon. ECS Transactions, 28, 233. doi:10.1149/1.3367955 |
Wang, G., Nguyen, N. D., Leys, M., Loo, R., Richard, O., Brammertz, G., Meuris, M., Heyns, M., & Caymax, M. (2010). Selective epitaxial growth of InP in STI trenches on off-axis Si(001) substrates. ECS Transactions, 27, 959. doi:10.1149/1.3360736 |
Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Nguyen, N. D., Loo, R., & Mantl, S. (2009). Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95, 144103. doi:10.1063/1.3240409 |
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Yang, L., Goossens, J., Moussa, A., Clarysse, T., Richard, O., Bender, H., Zaima, S., Sakai, A., Loo, R., Lin, J. C., Vandervorst, W., & Caymax, M. (2009). Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology. Thin Solid Films, 518 (6), 48. doi:10.1016/j.tsf.2009.10.053 |
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., & Caymax, M. (2009). Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition. IEEE Electron Device Letters, 30, 1173. doi:10.1109/LED.2009.2030989 |
Takeuchi, S., Nguyen, N. D., Goossens, J., Caymax, M., & Loo, R. (2009). SiGe growth using Si3H8 by low temperature chemical vapor deposition. Thin Solid Films, 518 (6), 18. doi:10.1016/j.tsf.2009.10.047 |
You, S., Van Huylenbroeck, S., Nguyen, N. D., Sibaja-Hernandez, A., Venegas, R., Van Wichelen, K., Decoutere, S., & De Meyer, K. (2009). Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs. Thin Solid Films, 518 (6), 68. doi:10.1016/j.tsf.2009.10.058 |
Nguyen, N. D., Loo, R., & Caymax, M. (2008). Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application. Applied Surface Science, 264, 6072. doi:10.1016/j.apsusc.2008.02.194 |
Reiche, M., Moutanabbir, O., Himcinschi, C., Christiansen, S., Erfurth, E., Gösele, U., Mantl, S., Buca, D., Zhao, Q., Loo, R., Nguyen, N. D., Muster, F., & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation. ECS Transactions, 16, 211. doi:10.1149/1.2982883 |
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. ECS Transactions, 16, 495. doi:10.1149/1.2986806 |
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. ECS Transactions, 10, 151. doi:10.1149/1.2773985 |
Nguyen, N. D., Schmeits, M., & Loebl, H.-P. (2007). Determination of charge carrier transport properties in organic devices by admittance spectroscopy : application to hole mobility in α-NPD. Physical Review. B, Condensed Matter, 75, 75307. doi:10.1103/PhysRevB.75.075307 |
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. ECS Transactions, 6, 339. doi:10.1149/1.2728880 |
Nguyen, N. D., & Schmeits, M. (2006). Numerical simulation of impedance and admittance of OLEDs. Physica Status Solidi A. Applications and Materials Science, 203, 1901. doi:10.1002/pssa.200622014 |
Schmeits, M., & Nguyen, N. D. (2005). Small-signal characteristics of organic semiconductors with continuous energy distribution of traps. Physica Status Solidi A. Applications and Materials Science, 202 (2764). doi:10.1002/pssa.200521004 |
Verstraeten, D., Launay, J.-C., Delaye, P., Nguyen, N. D., Germain, M., Viraphong, O., & Lemaire, P. (2003). Photorefractive ZnTe grown by traveling heater method. Trends in Optics and Photonics, 87, 159. |
Nguyen, N. D., & Schmeits, M. (2002). The photorefractive effect at large modulation depth in semiconductors with multiple defect levels. Applied Physics. B, Lasers and Optics, 74, 35. doi:10.1007/s003400100764 |
Nguyen, N. D., Schmeits, M., Germain, M., Schineller, B., & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy. Physica Status Solidi C. Current Topics in Solid State Physics, 288-292. doi:10.1002/pssc.200390045 |
Nguyen, N. D., Germain, M., Schmeits, M., Evrard, R., Schineller, B., & Heuken, M. (2001). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers. Journal of Crystal Growth, 230, 596. doi:10.1016/S0022-0248(01)01259-3 |
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes. Journal of Applied Physics, 90, 985. doi:10.1063/1.1379345 |
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. Physica Status Solidi B. Basic Research, 228, 385. doi:10.1002/1521-3951(200111)228:2<385::AID-PSSB385>3.0.CO;2-6 |
Schmeits, M., Nguyen, N. D., & Germain, M. (2001). Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes. Journal of Applied Physics, 89, 1890. doi:10.1063/1.1339208 |
El Yacoubi, M., Evrard, R., Nguyen, N. D., & Schmeits, M. (2000). Electrical conduction by interface states in semiconductor heterojunctions. Semiconductor Science and Technology, 15, 341. doi:10.1088/0268-1242/15/4/307 |
Nguyen, N. D., Loo, R., & Caymax, M. (17 April 2012). Method for manufacturing a junction. |
Ratz, T., & Nguyen, N. D. (24 June 2022). Impact of Ge incorporation on the opto-electronic properties and the physics of deep defects in kesterites [Paper presentation]. See Future PV: Latsis Symposium on Earth-Abundant Materials for Future Photovoltaics. |
Ratz, T., & Nguyen, N. D. (27 April 2022). Relevance of Ge incorporation on the physics of deep defects in kesterite materials [Paper presentation]. International Conference on Emerging Photovoltaic Materials and Technologies, Turkey. |
Nguyen, N. D. (05 February 2015). Electrical metrology and modeling of semiconducting heterostructures for energy-‐harvesting devices [Paper presentation]. Solar Photovoltaic Research and Applications: New Collaborations for Innovative Perspectives, Uppsala, Sweden. |
Nguyen, N. D. (07 January 2014). Atomic layer doping of silicon [Paper presentation]. Séminaire. |
Nguyen, N. D. (10 April 2013). Electrical characterization by admittance spectroscopy : from impurity identification to interface analysis in nanostructures [Paper presentation]. Coloquio do Departamento de Física da Universidade Federal de São Carlos. |
Nguyen, N. D. (16 December 2010). Electrical characterization of semiconductor heterostructures by admittance spectroscopy [Paper presentation]. Séminaire invité, Grenoble, France. |
Nguyen, N. D. (11 September 2006). Admittance spectroscopy of semiconductor systems [Paper presentation]. Seminar (invited), Aachen, Germany. |
Nguyen, N. D. (2006). Admittance spectroscopy of semiconductor structures [Paper presentation]. Seminar (Invited), Leuven, Belgium. |
Nguyen, N. D., & Schmeits, M. (12 December 2005). Admittance spectroscopy of OLEDs [Paper presentation]. OLED Colloquium, Aachen, Germany. |
Nguyen, N. D. (2001). Experimental and theoretical study of Mg-doped GaN Schottky structures by thermal admittance spectroscopy [Paper presentation]. Seminar on Gallium Nitride (invited), Eindhoven, Netherlands. |
Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. In 222nd ECS Meeting, 2012. ECS. |
Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. In 221st ECS Meeting. Pennington, United States: ECS. |
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Winderickx, G., Sioncke, S., De Jaeger, B., Wang, G., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffman, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. In 219th ECS Meeting (ECS). Pennington, United States: ECS. |
Nguyen, N. D., Wang, G., Waldron, N., Winderickx, G., Brammertz, G., Leys, M., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Caymax, M., Féron, O., Buttitta, F., O'Neil, B., Lindner, J., Schulte, F., Schineller, B., & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. In 218th ECS Meeting, 2010. Pennington, United States: ECS. |
Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Hellings, G., Vincent, B., Firrincieli, A., Sioncke, S., De Jaeger, B., Wang, G., Krom, R., Mitard, J., Wang, W.-E., Passlack, M., Heyns, M., Caymax, M., Meuris, M., Biesemans, S., & Hoffmann, T. (2010). III-V Devices for Advanced CMOS. In 217th ECS Meeting. Pennington, United States: ECS. |
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Loo, R., Goossens, J., Moussa, A., Clarysse, T., Caymax, M., & Vandervorst, W. (2009). Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology. In International Semiconductor Device Research Symposium, 2009. Los Alamitos, United States: IEEE. doi:10.1109/ISDRS.2009.5378166 |
Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Loo, R., Goossens, J., Moussa, A., Clarysse, T., & Vandervorst, W. (2009). Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology. In S. Chiussi, P. Alpuim, J. Murota, P. Gonzalez, J. Serra, ... B. Leon (Eds.), SiNEP 2009. 1st International Workshop on Si based nano-electronics and -photonics. NETBIBLO. |
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., Goossens, J., & Caymax, M. (2009). Zero-Bias Si Backward Diodes Detectors Incorporating P and B δ-Doping Layers Grown by Chemical Vapor Deposition. In International Semiconductor Device Research Symposium, 2009. Los Alamitos, United States: IEEE. doi:10.1109/ISDRS.2009.5378255 |
Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., You, S., Winderickx, G., Radisic, D., Lee, W., Ong, P., Vandeweyer, T., Nguyen, N. D., De Meyer, K., & Decoutere, S. (2009). A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture. In IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009 (pp. 5-8). IEEE. doi:10.1109/BIPOL.2009.5314244 |
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. In 214th ECS Meeting, 2008. Pennington, United States: ECS. |
Driussi, F., Esseni, D., Selmi, L., Schmidt, M., Lemme, M. C., Kurze, H., Buca, D., Mantl, S., Luysberg, M., Loo, R., Nguyen, N. D., & Reiche, M. (2007). Fabrication, characterization, and modeling of strained SOI MOSFETs with very large effective mobility. In IEEE (Ed.), 37th European Solid State Device Research Conference (ESSDERC) (pp. 315 - 318). doi:10.1109/ESSDERC.2007.4430941 |
Mantl, S., Buca, D., Zhao, Q., Holländer, B., Feste, S., Luysberg, M., Reiche, M., Gösele, U., Buchholtz, W., Wei, A., Horstmann, M., Loo, R., & Nguyen, N. D. (2007). Large current enhancement in n-MOSFETs with strained Si on insulator. In International Semiconductor Device Research Symposium, 2007. Los Alamitos, United States: IEEE. doi:10.1109/ISDRS.2007.4422442 |
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. In 211th ECS Meeting, 2007. Pennington, United States: ECS. |
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. In F. Ponce & A. Bell (Eds.), ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors. Wiley-VCH. |
Sliti, N., Nguyen, N. D., & Saad;TOUIHRI. (17 October 2023). Numerical modeling and analysis of AZO/Cu2O transparent solar cell with a TiO2 buffer layer [Poster presentation]. 8th International Symposium on Transparent Conductive Materials &12th International Symposium on Transparent Oxideand Related Materials for Electronics and Optics, Grete, Greece. |
Baret, A., Bardet Laetitia, Balty, F., Bellet, D., & Nguyen, N. D. (01 June 2023). Bridge percolation: electrical connectivity of discontinued conducting slabs by metallic nanowires [Poster presentation]. EMRS Spring meeting, Strasbourg, France. |
Sliti, N., Fourneau, E., Ratz, T., Saad Touihri, & Nguyen, N. D. (20 October 2022). Mg-doped Cu2O thin films with enhanced functional properties grown by magnetron sputtering under optimized pressure conditions [Paper presentation]. 8th International Symposium on Transparent Conductive Materials &12th International Symposium on Transparent Oxideand Related Materials for Electronics and Optics, Grete, Greece. |
Baret, A., Bardet, L., Balty, F., Bellet, D., & Nguyen, N. D. (October 2022). Composite transparent conducting material using metallic nanowire networks on a flexible substrate [Poster presentation]. TCM-TOEO 2022, Hersonissos, Greece. |
Ratz, T., Nguyen, N. D., Brammertz, G., Vermang, B., & Raty, J.-Y. (10 February 2022). Physics of Ge-related point defects in Sn-based, Ge-doped and Ge-alloyed kesterites [Poster presentation]. 12th European Kesterite Workshop, Copenhagen, Denmark. |
Nguyen, N. D., Ratz, T., Mawet, S., & Fourneau, E. (20 September 2021). Remote teaching experience : the case study of a course in experimental physics with practical laboratory sessions [Paper presentation]. Optimizing Digital Teaching and Communication. |
Sliti, N., Nguyen, N. D., & Touihri, S. (28 June 2021). Room temperature sputtered p-type cuprous oxide thin films: The influence of oxygen addition [Paper presentation]. International Meeting on Advanced Materials (IMAM-2021), Hammamet, Tunisia. |
Kumar, S., Balty, F., Mignolet, M., Ratz, T., & Nguyen, N. D. (02 June 2021). Electrical and optical properties of plasma-treated transparent electrodes based on silver nanowire networks [Poster presentation]. European Materials Research Society (E-MRS) 2021 Spring Meeting, Strasbourg, France. |
Kumar, S., Balty, F., Sliti, N., & Nguyen, N. D. (02 June 2021). Probing interfaces in perovskite solar cells by intensity modulated photocurrent spectroscopy [Poster presentation]. European Materials Research Society (E-MRS) 2021 Spring Meeting, Strasbourg, France. |
Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (02 June 2021). Theoretical study of the opto-electronic properties of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites for solar cell efficiency modelling [Poster presentation]. European Materials Research Society (EMRS) Spring meeting 2021, France. |
Sliti, N., Ratz, T., Touihri, S., & Nguyen, N. D. (02 June 2021). Numerical simulation of transparent heterojunctions based on Cu2O thin films [Poster presentation]. European Materials Research Society (E-MRS) 2021 Spring Meeting, Strasbourg, France. |
Sliti, N., Ratz, T., Fourneau, E., Touihri, S., & Nguyen, N. D. (01 June 2021). Effect of pressure on the physical properties of p-type cuprous oxide deposited by radio-frequency magnetron sputtering [Paper presentation]. European Materials Research Society (E-MRS) 2021 Spring Meeting, Strasbourg, France. |
Nguyen, N. D. (2021). Electrical control of absorption peaks in semiconducting media nanostructured by arrays of metallic wires [Paper presentation]. International Conference on Nano Research and Development. |
Nguyen, N. D. (2021). Deviation from Thomas-Reiche-Kuhn rule in the case of conduction electrons bound around metallic nanowires [Paper presentation]. International Congress on Advanced Materials Science and Engineering. |
Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (26 November 2020). Study of the opto-electronic properties of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites as input data for solar cell efficiency modelling [Poster presentation]. 11th Kesterite Workshop, Oldenburg, Germany. |
Channam, V. S. K., Sliti, N., & Nguyen, N. D. (May 2020). Intensity modulated photocurrent spectroscopy as an emerging technique for the interface probing in perovskite solar cells [Paper presentation]. European Materials Research Society (E-MRS) 2020 Spring Meeting, Strasbourg, France. |
Channam, V. S. K., Vermeulen, B., Ratz, T., & Nguyen, N. D. (May 2020). Effect of argon plasma treatment on transparent electrodes based on silver nanowire networks [Poster presentation]. European Materials Research Society (E-MRS) 2020 Spring Meeting, Strasbourg, France. |
Huynh, C. C., Mádai, E., Evrard, R., & Nguyen, N. D. (May 2020). A tunable nanodevice with conduction electrons bound in quantum states around metallic wires [Paper presentation]. European Materials Research Society (E-MRS) 2020 Spring Meeting, Strasbourg, France. |
Sliti, N., Resende, J., Ratz, T., & Nguyen, N. D. (April 2020). Defect assessment of Mg-doped Cu2O thin films prepared by RF magnetron sputtering [Poster presentation]. Defects 2020 Workshop, Leuven, Belgium. |
Fourneau, E., Silhanek, A., & Nguyen, N. D. (28 November 2019). Origin of the non-linear spin detection efficiency in tunnel junction under bias [Paper presentation]. 8th International Synposium on the control of Semiconductor interfaces, Sendai, Japan. |
Ratz, T., Brammertz, G., Caballero, R., Léon, M., Canulescu, S., Schou, J., Gütay, L., Devandra, P., Taskesen, T., Kim, D.-H., Kang, J.-K., Malerba, C., Redinger, A., Saucedo, E., Shin, B., Tampo, H., Timmo, K., Nguyen, N. D., & Vermang, B. (21 November 2019). History and prospects of the physical synthesis of kesterite for photovoltaic applications [Poster presentation]. Thomas Ratz, Uppsala, Sweden. |
Nguyen, N. D. (October 2019). Conduction electrons bound in quantum states around metallic wires as a basis for a tunable nanodevice [Paper presentation]. 9th World Congress of Nano Sciences and Technology 2019. |
Lombardo, J., Collienne, S., Petrillo, A., Fourneau, E., Nguyen, N. D., & Silhanek, A. (25 September 2019). Electromigration-induced resistance switching in indented Al microstrips [Poster presentation]. International Conference on Micro and Nano Engineering 2019 (MNE19), Rhodes, Greece. |
Huynh Chi Cuong, Evrard, R., & Nguyen, N. D. (09 July 2019). Linear Response of Bound Electrons to a Quasi-Static Oscillating Field in GaN Nanowire Structures [Poster presentation]. 13th International Conference on Nitride Semiconductors, Bellevue, Washington., United States. |
Vanderheyden, B., Avila Osses, J., Brisbois, J., Burger, L., Nguyen, N. D., & Silhanek, A. (20 May 2019). Magnetic flux penetration in superconducting films with border defects [Paper presentation]. Vortex 2019 in Antwerp, XVII International Workshop on Vortex Matter in Superconductors, Antwerp, Belgium. |
Nguyen, N. D. (November 2018). Nanostructured metallic networks as window electrodes for photovoltaic devices [Paper presentation]. Advanced Energy Materials World Congress (AEMWC 2018), Stockholm, Sweden. |
Nguyen, N. D. (September 2018). Physical modeling of the percolation onset in conducting nanowire networks [Paper presentation]. Collaborative Conference on Materials Science and Technology (CCMST 2018), Beijing, China. |
Fourneau, E., Avila Osses, J., Silhanek, A., & Nguyen, N. D. (28 May 2018). Spin-injection in a Ge-based thin film device : theoretical study of geometrical aspects [Poster presentation]. 1st Joint ISTDM / ICSI 2018 Conference, Potsdam, Germany. |
Cossuet, T., Resende, J., Rapenne, L., Chaix-Pluchery, O., Jimenez, C., Nguyen, N. D., Renou, G., Blanc-Pelissier, D., Appert, E., Pearson, A., Hoyes, R., Munoz-Rojas, D., Deschanvres, J.-L., & Consonni, V. (06 April 2018). ZnO / CuCrO2 Core-Shell Nanowire Heterostructures for Self-Powered UV Photodetectors [Paper presentation]. Materials Research Socieyt Spring 2018 Meeting, Phoenix, United States. |
Nguyen, V. H., AghazadehChors, S., Masse de la Huerta, C., Khan, A., Jimenez, C., Nguyen, N. D., Munoz, D., Bellet, D., & Munoz-Rojas, D. (03 April 2018). Ag-Nanowire/Metal Oxide Composite—A Printable Transparent Electrode for Applications in Optoelectronic Devices [Paper presentation]. Materials Research Society Spring 2018 Meeting, Phoenix, United States. |
Sannicolo, T., Nguyen, V. H., AghazadehChors, S., Khan, A., Nguyen, N. D., Celle, C., Simonato, J.-P., Munoz-Rojas, D., & Bellet, D. (03 April 2018). Flexible Transparent Electrodes based on Silver Nanowire Networks: Nanoscale Characterisation, Electrical Percolation, and Integration into Devices [Paper presentation]. Materials Research Society Spring 2018 Meeting, Phoenix, United States. |
Fourneau, E., Avila Osses, J., Silhanek, A., & Nguyen, N. D. (06 November 2017). Injection of spin-polarized current in a Ge- based magnetic device with coplanar contacts [Poster presentation]. 62nd Annual Conference on Magnetism and Magnetic Materials, Pittsburgh, United States - Pennsylvania. |
Burger, L., Avila Osses, J., Nguyen, N. D., Silhanek, A., & Vanderheyden, B. (20 September 2017). Influence of the inhomogeneous properties of a superconducting film on the penetration of the magnetic flux [Poster presentation]. EUCAS 2017, 13th European Conference on Applied Superconductivity, Genève, Switzerland. |
Vanderheyden, B., Avila Osses, J., Brisbois, J., Burger, L., Nguyen, N. D., & Silhanek, A. (31 August 2017). Model for the penetration of magnetic flux in Nb superconducting films with lithographically defined indentations and defects due to inhomogeneities [Paper presentation]. IUMRS-ICAM 2017, 15th International Conference on Advanced Materials, Kyoto, Japan. |
Nguyen, N. D., Sannicolo, T., Aghazadehchors, S., Nguyen, H. V., Lagrange, M., Munoz-Rojas, D., Jimenez, C., Bréchet, Y., & Bellet, D. (20 June 2017). Silver nanowire networks as transparent conductive materials: from basic physical properties to device integration [Paper presentation]. NanoFabrication, Devices & Metrology Workshop, Eindhoven, Netherlands. |
Resende, J., Cossuet, T., Appert, E., Jimenez, C., Nguyen, N. D., Deschanvres, J.-L., Munoz-Rojas, D., & Consonni, V. (12 June 2017). Integration of CuCrO2 thin film grown by Aerosol-Assisted MOCVD in core shell ZnO nanowire heterostructure for UV photodetectors [Poster presentation]. Joint EUROCVD 21 - Baltic ALD 15 Meeting, Linkoping, Sweden. |
Resende, J., Cossuet, T., Appert, E., Rapenne, L., Jimenez, C., Renou, G., Nguyen, N. D., Munoz-Rojas, D., Consonni, V., & Deschanvres, J.-L. (23 May 2017). A novel ZnO / CuCrO2 core shell nanowire heterostructure for UV photodetectors [Paper presentation]. European Materials Society Spring Meeting (EMRS Spring 2017), Strasbourg, France. |
Aghazadehchors, S., Nguyen, V., Lagrange, M., Khan, A., Sannicolo, T., Nguyen, N. D., Munoz-Rojas, D., & Bellet, D. (October 2016). Study of the effect of thin ALD oxide coatings on the stability of silver nanowire based transparent electrodes [Poster presentation]. 6th International Symposium on Transparent Conductive Materials, Platanias, Greece. |
Avelas Resende, J., Brochen, S., Bergerot, L., Jimenez, C., Nguyen, N. D., & Deschanvres, J.-L. (October 2016). Cation-doped Cu2O as a transparent p-type semiconducting oxide with enhanced performances: A comparison between strontium and magnesium incorporation [Paper presentation]. 6th International Symposium on Transparent Conductive Materials, Platanias, Greece. |
Sannicolo, T., Lagrange, M., Xian, S., Munos-Rojas, D., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (October 2016). Transparent electrodes based on silver nanowire networks: from fundamental aspects to integration into device [Paper presentation]. 6th International Symposium on Transparent Conductive Materials. |
Sannicolo, T., Lagrange, M., Xian, S., Munoz-Rojas, D., Moreau, S., Bréchet, Y., Nguyen, N. D., Celle, C., Simonato, J.-P., & Bellet, D. (September 2016). Flexible Transparent Electrodes based on Silver Nanowire Networks: Nanoscale Characterisation, Electrical Percolation, and Integration into Devices [Paper presentation]. 11th International Conference on Surface Coatings and Nanostructured Materials, Aveiro, Portugal. |
Avelas Resende, J., Nguyen, N. D., Deschanvres, J.-L., & Jimenez, C. (September 2015). Magnesium-doped Cuprous Oxide (Mg:Cu2O) thin films as a transparent p-type semiconductor oxide [Poster presentation]. 2015 E-MRS Fall Meeting and Exhibit, Warsaw, Poland. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (September 2015). Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes [Poster presentation]. E-MRS 2015 Fall Meeting. |
Lagrange, M., Sannicolo, T., Langley, D., Munoz-Rojas, D., Jimenez, C., Anikin, M., Chaix-Pluchery, O., Celle, C., Simonato, J.-P., Nguyen, N. D., Bréchet, Y., & Bellet, D. (September 2015). Transparent electrodes based on silver nanowire networks: physical properties and potential applications [Paper presentation]. E-MRS Fall Meeting 2016. |
Nguyen, N. D. (May 2015). An atomic layer deposition approach to ultra-shallow doping of silicon [Paper presentation]. XXXVIII ENFMC Brazilian Physical Society Meeting. |
Baert, B., Gupta, S., Gencarelli, F., Shimura, Y., Loo, R., Simoen, E., & Nguyen, N. D. (2015). Reverse current transient behavior of pGeSn/nGe diodes [Paper presentation]. The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9), Montréal, Canada. |
Toussaint, C., Dewalque, J., Colson, P., Vertruyen, B., Cloots, R., Nguyen, N. D., & Henrist, C. (2015). A combination of mesoporosity and Ti-doping in hematite films for water splitting [Paper presentation]. EDT chim/MAIN Ph.D. Student Day. |
Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (15 September 2014). Impact of traps on the electrical characteristics of GeSn/Ge diodes [Poster presentation]. E-MRS 2014 Fall Meeting - Symposium J, Warsaw, Poland. |
Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (03 June 2014). Electrical characterization of pGeSn/nGe diodes [Paper presentation]. 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore. doi:10.1109/ISTDM.2014.6874640 |
Giusti, G., Consonni, V., Langley, D., Rey, G., Zhang, S., Pellegrin, Y., Nguyen, N. D., & Bellet, D. (2014). Highly Diffuse Fluorine-doped SnO2 Thin Films for Photovoltaic Applications [Paper presentation]. CIMTEC 2014, 6th Forum on New Materials, Montecatini Terme, Italy. |
Lagrange, M., Langley, D., Munos-Rojas, Jimenez, C., Nguyen, N. D., Bréchet, Y., & Bellet, D. (2014). Interplay between defects in metallic nanowire networks and their physical properties: a modeling and experimental approach [Paper presentation]. European Materials Research Society Spring Meeting (EMRS-2014 Spring), Lille, France. |
Langley, D., Giusti, G., Zhang, S., Consonni, V., Pellegrin, Y., Nguyen, N. D., & Bellet, D. (2014). Innovative Electrodes for Dye Sensitized Solar Cells [Paper presentation]. Materials Research Society (MRS) Spring Meeting 2014, San Francisco, United States. |
Langley, D., Lagrange, M., Giusti, G., Jimenez, C., Nguyen, N. D., Bréchet, Y., & Bellet, D. (2014). Physical properties of silver nanowire networks: effects of percolation and thermal annealing [Paper presentation]. The International Advances in Applied Physics and Materials Science Congress & Exhibition (APMAS 2014). |
Langley, D., Lagrange, M., Munoz-Rojas, D., Jimenez, C., Jouvert, M., Nguyen, N. D., Bréchet, Y., & Bellet, D. (2014). Transparent electrodes composed of silver nanowire networks: physical properties and potential applications [Paper presentation]. 5th International Symposium on Transparent Conductive Materials, Platanias, Greece. |
Langley, D., Lagrange, M., Munoz-Rojas, D., Jimenez, C., Pellegrin, Y., Nguyen, N. D., Bréchet, Y., & Bellet, D. (2014). Transparent electrodes composed of silver nanowire networks for photovoltaic applications [Paper presentation]. European Materials Research Society Spring Meeting (EMRS-2014 Spring), Lille, France. |
Langley, D., Lagrange, M., Munoz-Rojas, D., Nguyen, N. D., Bréchet, Y., & Bellet, D. (2014). Metallic nanowire networks for energy applications: experimental and modelling approaches [Paper presentation]. European Materials Research Society Spring Meeting (EMRS-2014 Spring), Lille, France. |
Langley, D., Lagrange, M., Nguyen, N. D., & Bellet, D. (2014). Stick Percolation: Models for Real Systems [Paper presentation]. Materials Research Society (MRS) Spring Meeting 2014, San Francisco, United States. |
Sorel, S., Lagrange, M., Langley, D., Nguyen, N. D., Bréchet, Y., & Bellet, D. (2014). Thermal properties of silver nanowire networks [Paper presentation]. European Materials Research Society Spring Meeting (EMRS-2014 Spring), Lille, France. |
Amand, J., & Nguyen, N. D. (03 December 2013). Numerical simulation of the electrical characteristics of CIGS/CdS/ZnO solar cell heterostructures [Poster presentation]. MRS fall meeting 2013, Boston, United States - Massachusetts. |
Amand, J., & Nguyen, N. D. (17 September 2013). Numerical simulation of the electrical characteristics of CIGS/CdS/ZnO solar cell heterostructures [Poster presentation]. E-MRS 2013 Fall Meeting, Warsow, Poland. |
Lagrange, M., Langley, D., Giusti, G., Collins, R., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (16 September 2013). Silver nanowire network : physical properties and effects of thermal treatments [Paper presentation]. European Materials Research Society (E-MRS) 2013 Fall Meeting. |
Shimura, Y., Wang, W., Gencarelli, F., Vincent, B., Nieddu, T., Laha, P., Terryn, H., Stefanov, S., Chiussi, S., Van Campenhout, J., Nguyen, N. D., Vantomme, A., & Loo, R. (September 2013). Theoretical and experimental investigation of the GeSn bandgap [Paper presentation]. European Materials Research Society (E-MRS) 2013 Fall Meeting. |
Toussaint, C., Cloots, R., Nguyen, N. D., & Henrist, C. (04 July 2013). Influence of mesoporosity in hematite films on water splitting efficiency [Paper presentation]. 4th European PEFC and H2 Forum, Luzerne, Switzerland. |
Gupta, S., Simoen, E., Asano, T., Nakatsuka, O., Gencarelli, F., Shimura, Y., Moussa, A., Loo, R., Zaima, S., Baert, B., Dobri, A., Nguyen, N. D., & Heyns, M. (04 June 2013). Electrical Activity of Threading Dislocations and Defect Complexes in GeSn Epitaxial Layers [Paper presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan. |
Shimura, Y., Wang, W., Nieddu, T., Gencarelli, F., Vincent, B., Laha, P., Terryn, H., Stefanov, S., Chiussi, S., Van Campenhout, J., Nguyen, N. D., Vantomme, A., & Loo, R. (04 June 2013). Bandgap Measurement by Spectroscopic Ellipsometry for Strained Ge1-xSnx [Paper presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan. |
Wang, W., Shimura, Y., Nieddu, T., Gencarelli, F., Vincent, B., Nguyen, N. D., Vandervorst, W., & Loo, R. (04 June 2013). Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition [Paper presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan. |
Baert, B., Gupta, S., Schmeits, M., Simoen, E., & Nguyen, N. D. (June 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Poster presentation]. The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan. |
Baert, B., Schmeits, M., & Nguyen, N. D. (May 2013). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics [Paper presentation]. European Materials Research Society (E-MRS) 2013 Spring Meeting. |
Dewalque, J., Nguyen, N. D., Henrist, C., Cloots, R., & Colson, P. (March 2013). Long term stability of TiO2 templated multilayer films used as high efficiency photoelectrode in liquid DSSCs [Poster presentation]. Third International Conference on Multifunctional, Hybrid and Nanomaterials (HYMA 2013), Sorrento, Italy. |
Langley, D., Giusti, G., Nguyen, N. D., & Bellet, D. (2013). Collection Efficiency and Design Requirements for Metallic Nanowire Networks in Solar Cells [Poster presentation]. European Materials Research Society Spring Meeting (E-MRS Spring 2013), Strasbourg, France. |
Langley, D., Giusti, G., Consonni, V., Nguyen, N. D., Bellet, D., & Bréchet, Y. (24 October 2012). Electrical investigation of TCMs: role of structural defects and external stress [Paper presentation]. 4th International Symposium on Transparent Conductive Materials (TCM 2012), Hersonissos, Crete, Greece. |
Baert, B., & Nguyen, N. D. (June 2012). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures [Poster presentation]. "Jaszowiec" International School and Conference on the Physics of Semiconductors. |
Nguyen, N. D. (23 April 2012). Caractérisation électrique de films minces et d'hétérostructures pour applications photovoltaïques [Paper presentation]. Journée Scientifique des Comices ‘Energie solaire’ du WARE, Namur, Belgium. |
Baert, B., Truong, D. Y. N., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy [Poster presentation]. 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, United States - California. |
Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of III-V on Si for High-Mobility CMOS [Paper presentation]. 4th International SiGe Technology and Device Meeting (ISTDM), Berkeley, United States. doi:10.1109/ISTDM.2012.6222422 |
Aazou, S., Ibral, A., Assaid, M., Baert, B., & Nguyen, N. D. (2011). New method for photovoltaic solar cell physical parameters extraction [Paper presentation]. Congrès International sur les Energies Renouvelables et l'Efficacité Energétique (CIEREE'2011), Fès, Morocco. |
Nguyen, N. D., Souriau, L., Shimizu, Y., Jiang, S., Rosseel, E., Everaert, J.-L., Delmotte, J., Moussa, A., Clarysse, T., Loo, R., Vandervorst, W., & Caymax, M. (2011). N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal [Paper presentation]. 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium. |
Truong, D. Y. N., Vertruyen, B., & Nguyen, N. D. (2011). Admittance spectroscopy study of NiGe contact on GeSn [Paper presentation]. 3rd EMMI/ FAME Master Research Workshop – Functionalized materials for a competitive and sustainable society, Louvain-la-Neuve, Belgium. |
You, S., Decoutere, S., Nguyen, N. D., Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., Loo, R., & De Meyer, K. (2011). Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy [Paper presentation]. 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium. |
Loo, R., Hikavyy, A., Vincent, B., Wang, G., Vanherle, W., Gencarelli, F., Nguyen, N. D., Rosseel, E., Souriau, L., Rondas, D., Dekoster, J., & Caymax, M. (23 September 2010). Epitaxial Si, SiGe and Ge for high-performance devices [Paper presentation]. ASM User Meeting, Munich, Germany. |
Caymax, M., Bellenger, F., Brammertz, G., Dekoster, J., Delabie, A., Loo, R., Merckling, C., Nguyen, N. D., Nijns, L., Sioncke, S., Vincent, B., Wang, G., Vandervorst, W., & Heyns, M. (08 April 2010). Substrates and Gate Dielectrics: the Materials Issue for sub-22 nm CMOS Scaling [Paper presentation]. MRS Spring 2010 Meeting, San Francisco, United States. |
Nguyen, N. D., Brammertz, G., Wang, G., Lismont, K., Dekoster, J., Degroote, S., Leys, M., Nollet, V., Caymax, M., Buttita, F., Féron, O., O'Neil, B., Lindner, J., Schulte, F., Schineller, B., & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor on large-area Si substrate for advanced logic CMOS technologies [Paper presentation]. E-MRS Spring Meeting, 2010; Symposium H : Post-Si CMOS electronic devices: the role of Ge and III-V materials, Strasbourg, France. |
Shimizu, Y., Nguyen, N. D., Jiang, S., Rosseel, E., Takeuchi, S., Everaert, J.-L., Loo, R., Vandervorst, W., & Caymax, M. (2010). Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices [Poster presentation]. 5th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan. |
Goossens, J., Berghmans, B., Franquet, A., Nguyen, N. D., Delmotte, J., Geenen, L., Richard, O., Bender, H., & Vandervorst, W. (2009). Depth resolution and surface transients in crystalline Silicon at ultra low energies [Poster presentation]. 17th International Conference on Secondary Ion Mass Spectrometry (SIMS XVII), Toronto, Canada. |
Loo, R., Iacopi, F., Vanherle, W., Rooyackers, R., Vandooren, A., Takeuchi, S., Nguyen, N. D., Doornbos, G., & De Gendt, S. (2009). SiGe tunnel field effect transistors: challenges for selective epitaxial growth [Paper presentation]. MRS Spring Meeting, 2009, San Francisco, United States. |
Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., & Caymax, M. (2009). 200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD [Paper presentation]. 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, United States. |
Takeuchi, S., Nguyen, N. D., Goossens, J., Caymax, M., & Loo, R. (2009). Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition [Paper presentation]. 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, United States. |
Vandooren, A., Rooyackers, R., Leonelli, D., Iacopi, F., De Gendt, S., Verhulst, A., Heyns, M., Kunnen, E., Nguyen, N. D., Demand, M., Ong, P., Lee, W., Moonens, J., Richard, O., Vandenberghe, W., & Groeseneken, G. (2009). A 35nm diameter vertical silicon nanowire short-gate tunnelFET [Paper presentation]. Nanotechnology Workshop, Kyoto, Japan. |
Buca, D., Trinkaus, H., Holländer, B., Loo, R., Nguyen, N. D., & Mantl, S. (2008). Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer [Paper presentation]. 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan. |
Hikavyy, A., Nguyen, N. D., Loo, R., Ryan, P., Wormington, M., & Hopkins, J. (2008). In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction [Poster presentation]. 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan. |
Nguyen, N. D., Leys, F., Takeuchi, S., Loo, R., Caymax, M., Eyben, P., & Vandervorst, W. (2008). Conformal ultra shallow junctions by vapor phase doping with boron [Poster presentation]. 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan. |
Reiche, M., Moutanabbir, O., Himcinschi, C., Christiansen, S., Erfurth, E., Gösele, U., Mantl, S., Buca, D., Zhao, Q., Loo, R., Nguyen, N. D., Muster, F., & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation [Paper presentation]. 214th ECS Meeting, 2008, Honolulu, United States. |
Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy [Paper presentation]. 8th International Conference on Atomic Layer Deposition (ALD), Bruges, Belgium. |
Takeuchi, S., Yang, L., Nguyen, N. D., Loo, R., Conard, T., Pourtois, G., Vandervorst, W., & Caymax, M. (2008). Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling [Poster presentation]. 4th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan. |
Vandervorst, W., Eyben, P., Mody, J., Jurczak, M., Nguyen, N. D., Takeuchi, S., Leys, F., Loo, R., Caymax, M., & Everaert, J.-L. (2008). Conformal doping of FINFET's : a fabrication and metrology challenge [Paper presentation]. 17th International Conference in Ion Implantation Technology, Monterey, United States. |
Buca, D., Goryll, M., Holländer, B., Trinkaus, H., Mantl, S., Loo, R., & Nguyen, N. D. (2007). Enhancement of the relaxation of SiGe layers by He ion implantation using a delta-Si:C layer [Paper presentation]. Materials Research Society Spring Meeting 2007, San Francisco, United States. |
Mantl, S., Buca, D., Zhao, Q., Holländer, B., Feste, S., Luysberg, M., Reiche, M., Gösele, U., Buchholtz, W., Wei, A., Horstmann, M., Loo, R., & Nguyen, N. D. (2007). Strained Si-on-insulator for advanced CMOS devices [Poster presentation]. 4th International Workshop on Future Information Processing Technology, Bologna, Italy. |
Nguyen, N. D., Loo, R., & Caymax, M. (2007). Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate [Paper presentation]. Fifth International Symposium on Control of Semiconductor Interfaces, Tokyo, Japan. |
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction [Poster presentation]. 3rd International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan. |
Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction [Paper presentation]. Analytical Techniques for Semiconductor Materials and Process Characterization (ALTECH), Munich, Germany. |
Nguyen, N. D., Schmeits, M., Germain, M., Schineller, B., & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy [Poster presentation]. International Workshop on Nitride Semiconductors, Aachen, Germany. |
Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes [Poster presentation]. Réunion Scientifique Générale de la Société Belge de Physique, Louvain, Belgium. |
Nguyen, N. D., Germain, M., Schmeits, M., Evrard, R., Schineller, B., & Heuken, M. (2000). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers [Paper presentation]. 4th European GaN Workshop, Nottingham, United Kingdom. |
Nguyen, N. D., & Schmeits, M. (2000). Numerical modelling of the photorefractive effect in II-VI semiconductors [Poster presentation]. Réunion Scientifique Générale de la Société Belge de Physique, Louvain-la-Neuve, Belgium. |
Nguyen, N. D., & Schmeits, M. (1999). Numerical modelling of the photorefractive effect in II-VI semiconductors [Poster presentation]. International Workshop on advances in Growth and Characterization of II-VI Semiconductors, Würzburg, Germany. |
Hartmann, J.-M., Loo, R., Nguyen, N. D., Houssa, M., & Caymax, M. (Eds.). (2012). Proceedings of the 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7). Elsevier. |
Bellet, D., Papanastasiou, D., Resende, J., Nguyen, V. H., Jimenez, C., Nguyen, N. D., & Munoz-Rojas, D. (2019). Metallic nanowire percolating networks: from main properties to applications. In Nanosystems. London, United Kingdom: IntechOpen. doi:10.5772/intechopen.89281 |
Papanastasiou, D. T., Sannicolo, T., Resende, J., Nguyen, V. H., Jimenez, C., Munoz-Rojas, D., Nguyen, N. D., & Bellet, D. (2019). Recent progress in the study of silver nanowire networks and their applications. In J. Zhu, A. Jin, D. Zhu, ... D. Bellet (Eds.), Advances toward the development of nanotechnology: current challenges and new frontiers in materials, processes, devices, and applications. Verlag. |
Nguyen, N. D., Evrard, R., & Stroscio, M. A. (2016). Polar surface phonons in nanotori. In Journal of Physics: Condensed Matter. Institute of Physics. |
Nguyen, N. D. (2004). Electrical characterization of III-nitride heterostructures by thermal admittance spectroscopy [Doctoral thesis, ULiège - Université de Liège]. ORBi-University of Liège. https://orbi.uliege.be/handle/2268/68382 |
Nguyen, N. D. (1998). Contributions théorique et numérique à l'étude de la photoréfractivité dans les semi-conducteurs II-VI [Master’s dissertation, ULiège - Université de Liège]. ORBi-University of Liège. https://orbi.uliege.be/handle/2268/68278 |
Nguyen, N. D. (2012). Numerical simulation of P-OLEDs. (35). |
Nguyen, N. D., & Hoebeke, M. (2002). Physique expérimentale préparatoire aux sciences biomédicales y compris l'introduction mathématique aux sciences expérimentales : Fascicule de travaux dirigés. (ULiège - Université de Liège, PHYS0111-2 Bases physiques et mathématiques des sciences biomédicales). |
Nguyen, N. D. (2020). Emission "Les Eclaireurs" sur la Première (RTBF radio) : "Des noeuds et des nanofils d'argent". |