Publications et communications de Ngoc Duy Nguyen

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1. Thèses et mémoires

1.b. Thèses de doctorat

Nguyen, N. D. (2004). Electrical characterization of III-nitride heterostructures by thermal admittance spectroscopy. Unpublished doctoral thesis, Université de Liège, Belgium.

http://hdl.handle.net/2268/68382

1.c. Mémoires de second cycle (licence, master, DES, DEA)

2. Brevets

Nguyen, N. D, Loo, R, & Caymax, M. (2010). Method for manufacturing a junction. United States of America: McDonnell Boehnen Hulbert & Berghoff LLP.

http://hdl.handle.net/2268/68992

The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly, one aspect ...

3. Articles dans des revues scientifiques avec peer reviewing

3.a. À portée internationale

En tant que premier ou dernier auteur

Baert, B, Nakatsuka, O, Zaima, S, & Nguyen, N. D. (2013). Impedance Spectroscopy of GeSn-based Heterostructures. ECS Transactions, 50(9), 481-490.

http://hdl.handle.net/2268/127051

In this work, we investigated the electrical characteristics of p-GeSn/p-Ge and p-GeSn/n-Ge structures obtained by simulation of the basic semiconductor equations. We developed a numerical formalism based on a ...

Nguyen, N. D, Wang, G, Brammertz, G, Leys, M, Waldron, N, Winderickx, G, Lismont, K, Dekoster, J, Loo, R, Meuris, M, Degroote, S, Buttita, F, O'Neil, B, Féron, O, Lindner, J, Schulte, F, Schineller, B, Heuken, M, & Caymax, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. ECS Transactions, 33, 933.

http://hdl.handle.net/2268/69092

We have deposited III-V alloys on 200 mm Si miscut wafers with an oxide pattern. The selective epitaxial growth (SEG) of GaAs in large windows defined by SiO2 lines on a thick strained-relaxed Ge buffer layer ...

Nguyen, N. D, Rosseel, E, Takeuchi, S, Everaert, J.-L, Yang, L, Goossens, J, Moussa, A, Clarysse, T, Richard, O, Bender, H, Zaima, S, Sakai, A, Loo, R, Lin, J. C, Vandervorst, W, & Caymax, M. (2009). Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology. Thin Solid Films, 518(6), 48.

http://hdl.handle.net/2268/68760

We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both ...

Nguyen, N. D, Loo, R, & Caymax, M. (2008). Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application. Applied Surface Science, 264, 6072.

http://hdl.handle.net/2268/69479

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to ...

Nguyen, N. D, Schmeits, M, & Loebl, H.-P. (2007). Determination of charge carrier transport properties in organic devices by admittance spectroscopy : application to hole mobility in α-NPD. Physical Review. B : Condensed Matter, 75, 75307.

http://hdl.handle.net/2268/68543

Hole mobility in N,N′-diphenyl-N,N′-bis(1-naphtylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) is evaluated by electrical characterization in the ac regime. The frequency-dependent complex admittance and ...

Nguyen, N. D, Loo, R, Hikavyy, A, Van Daele, B, Ryan, P, Wormington, M, & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. ECS Transactions, 10, 151.

http://hdl.handle.net/2268/68550

The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We ...

Nguyen, N. D, & Schmeits, M. (2006). Numerical simulation of impedance and admittance of OLEDs. Physica Status Solidi : A. Applications and Materials Science, 203, 1901.

http://hdl.handle.net/2268/68466

The electrical characteristics of organic light-emitting devices are calculated for the dc and ac regimes by numerically solving the basic semiconductor equations under steady-state and small-signal conditions ...

Schmeits, M, & Nguyen, N. D. (2005). Small-signal characteristics of organic semiconductors with continuous energy distribution of traps. Physica Status Solidi A. Applications and Materials Science, 202(2764).

http://hdl.handle.net/2268/68396

The electrical characteristics of organic light emitting devices containing a continuous distribution of trap states in the forbidden gap are obtained by numerically solving the basic semiconductor equations ...

Nguyen, N. D, & Schmeits, M. (2002). The photorefractive effect at large modulation depth in semiconductors with multiple defect levels. Applied Physics B : Lasers & Optics, 74, 35.

http://hdl.handle.net/2268/68315

The photorefractive effect in semiconducting mate- rials with multiple defects is studied in the case of modulation depth m = 1. The basic equations are Poisson's equation and the continuity equations for ...

Nguyen, N. D, Schmeits, M, Germain, M, Schineller, B, & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy. Physica Status Solidi C. Current Topics in Solid State Physics, 288.

http://hdl.handle.net/2268/68322

Experimental results of electrical characterization of InGaN/GaN multiple-quantum-well electrolu- minescence test structures obtained by thermal admittance spectroscopy are presented. The stu- died GaN : Mg/5 ...

Nguyen, N. D, Germain, M, Schmeits, M, Evrard, R, Schineller, B, & Heuken, M. (2001). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers. Journal of Crystal Growth, 230, 596.

http://hdl.handle.net/2268/68300

The ac characteristics of GaN : Mg and undoped GaN layers, grown by MOVPE on sapphire substrates, are measured for a wide range of temperature and bias conditions, in order to investigate the effect of the ...

Nguyen, N. D, Germain, M, Schmeits, M, Schineller, B, & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes. Journal of Applied Physics, 90, 985.

http://hdl.handle.net/2268/68281

Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on ...

Nguyen, N. D, Germain, M, Schmeits, M, Schineller, B, & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. Physica Status Solidi B. Basic Research, 228, 385.

http://hdl.handle.net/2268/68283

Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature ...

En tant que co-auteur

You, S, Decoutere, S, Nguyen, N. D, Van Huylenbroeck, S, Sibaja-Hernandez, A, Venegas, R, Loo, R, & De Meyer, K. (2012). Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane-based chemical vapor deposition. Thin Solid Films, 520, 3345.

http://hdl.handle.net/2268/102196

In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth ...

Waldron, N, Wang, G, Nguyen, N. D, Orzali, T, Merckling, C, Brammertz, G, Ong, P, Winderickx, G, Hellings, G, Eneman, G, Caymax, M, Meuris, M, Horiguchi, N, & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. ECS Transactions, 45, 115.

http://hdl.handle.net/2268/127833

We report on the fabrication on InGaAs/InP implant free quantum well (IFQW) n-MOSFET devices on 200mm wafers in a Si CMOS processing environment. The starting virtual InP substrates were prepared by means of ...

Wang, G, Leys, M, Nguyen, N. D, Loo, R, Richard, O, Bender, H, Heyns, M, & Caymax, M. (2011). Growth of high quality InP layers in STI trenches on miscut Si (001) substrates. Journal of Crystal Growth, 315, 32.

http://hdl.handle.net/2268/68891

In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (0 0 1) substrates 6° miscut toward (1 1 1) using a thin Ge buffer layer. We ...

Waldron, N, Nguyen, N. D, Lin, D, Brammertz, G, Vincent, B, Firrincieli, A, Windericks, G, Sioncke, S, De Jaeger, B, Mitard, J, Wang, W.-E, Heyns, M, Caymax, M, Meuris, M, Absil, P, & Hoffmann, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. ECS Transactions, 35, 299.

http://hdl.handle.net/2268/98546

We report on the fabrication of MOS capacitors on 200 mm virtual GaAs substrates using a Si CMOS processing environment. The fabricated capacitors were comparable to those processed on bulk GaAs material ...

Wang, G, Leys, M, Nguyen, N. D, Loo, R, Brammertz, G, Richard, O, Bender, H, Dekoster, J, Meuris, M, Heyns, M, & Caymax, M. (2010). Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates. Journal of the Electrochemical Society, 157(11), 1023.

http://hdl.handle.net/2268/72873

In this paper, we report a comprehensive investigation of InP selective growth in shallow trench isolation (STI) structures on Si(001) substrates 6° off-cut toward (111). Extended defect-free InP layers were ...

Schineller, B, Nguyen, N. D, & Heuken, M. (2010). Growth of III/V materials on large area silicon. ECS Transactions, 28, 233.

http://hdl.handle.net/2268/68961

Continuous miniaturization has been at the heart of advances in modern semiconductor electronics. However, further scalability has seen its limits for conventional CMOS technology due to short channel effects ...

Bogdanowicz, J, Dortu, F, Clarysse, T, Vandervorst, W, Rosseel, E, Nguyen, N. D, Shaughnessy, D, Salnick, A, & Nicolaides, L. (2010). Non-destructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves. Journal of Vacuum Science & Technology : Part B, 28(1), 1C1.

http://hdl.handle.net/2268/68922

The ITRS Roadmap highlights the electrical characterization of the source and drain extension regions as a key challenge for future complimentary-metal-oxide-semiconductor technology. Presently, an accurate ...

Wang, G, Nguyen, N. D, Leys, M, Loo, R, Richard, O, Brammertz, G, Meuris, M, Heyns, M, & Caymax, M. (2010). Selective epitaxial growth of InP in STI trenches on off-axis Si(001) substrates. ECS Transactions, 27, 959.

http://hdl.handle.net/2268/69250

We report high quality InP layers selectively grown in shallow trench isolation structures on 6 degree offcut Si (001) substrates capped with a thin Ge buffer layer. The Ge layer was used to reduce the thermal ...

Takeuchi, S, Nguyen, N. D, Goossens, J, Caymax, M, & Loo, R. (2009). SiGe growth using Si3H8 by low temperature chemical vapor deposition. Thin Solid Films, 518(6), 18.

http://hdl.handle.net/2268/68749

Low temperature epitaxial growth of group-IV alloys is a key process step to realize the advanced Si-based devices. In order to keep high growth rate below 600 $\,^ rc$C, trisilane (Si3H8) was used for their ...

Park, S.-Y, Anisha, R, Berger, P, Loo, R, Nguyen, N. D, Takeuchi, S, & Caymax, M. (2009). Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition. IEEE Electron Device Letters, 30, 1173.

http://hdl.handle.net/2268/68789

This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells ...

Buca, D, Minamisawa, R. A, Trinkaus, H, Holländer, B, Nguyen, N. D, Loo, R, & Mantl, S. (2009). Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95, 144103.

http://hdl.handle.net/2268/68775

In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a 􏰀-impurity layer grown in the Si ...

You, S, Van Huylenbroeck, S, Nguyen, N. D, Sibaja-Hernandez, A, Venegas, R, Van Wichelen, K, Decoutere, S, & De Meyer, K. (2009). Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs. Thin Solid Films, 518(6), 68.

http://hdl.handle.net/2268/68823

This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant ...

Takeuchi, S, Nguyen, N. D, Leys, F, Loo, R, Conard, T, Vandervorst, W, & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. ECS Transactions, 16, 495.

http://hdl.handle.net/2268/68721

Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to ...

Reiche, M, Moutanabbir, O, Himcinschi, C, Christiansen, S, Erfurth, E, Gösele, U, Mantl, S, Buca, D, Zhao, Q, Loo, R, Nguyen, N. D, Muster, F, & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation. ECS Transactions, 16, 211.

http://hdl.handle.net/2268/68724

Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain is introduced in CMOS devices by process-induced stressors allowing the local generation of tensile or ...

Reiche, M, Himcinschi, C, Gösele, U, Christiansen, S, Mantl, S, Buca, D, Zhao, Q. T, Feste, S, Loo, R, Nguyen, N. D, Buchholtz, W, Wei, A, Horstmann, M, Feijoo, D, & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. ECS Transactions, 6, 339.

http://hdl.handle.net/2268/68548

SSOI substrates were successfully fabricated using He+ ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide ...

Verstraeten, D, Launay, J.-C, Delaye, P, Nguyen, N. D, Germain, M, Viraphong, O, & Lemaire, P. (2003). Photorefractive ZnTe grown by traveling heater method. Trends in Optics and Photonics, 87, 159.

http://hdl.handle.net/2268/68379

Schmeits, M, Nguyen, N. D, & Germain, M. (2001). Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes. Journal of Applied Physics, 89, 1890.

http://hdl.handle.net/2268/68290

The effect of the deep acceptor Mg on the electrical characteristics of p-doped GaN Schottky diodes is analyzed. The theoretical study is based on the numerical resolution of the basic semiconductor equations ...

El Yacoubi, M, Evrard, R, Nguyen, N. D, & Schmeits, M. (2000). Electrical conduction by interface states in semiconductor heterojunctions. Semiconductor Science & Technology, 15, 341.

http://hdl.handle.net/2268/68260

Electrical conduction in semiconductor heterojunctions containing defect states in the interface region is studied. As the classical drift-diffusion mechanism cannot in any case explain electrical conduction ...

5. Ouvrages

5.b. En tant qu’éditeur scientifique ou directeur de publication

8. Conférences scientifiques dans des universités et centres de recherche

Nguyen, N. D. (2006). Admittance spectroscopy of semiconductor structures. Paper presented at Seminar (Invited), Leuven, Belgium.

http://hdl.handle.net/2268/69113

Admittance spectroscopy is a powerful tool for electrical characterization of semiconductor structures such as p-n junctions, Schottky diodes, light-emitting systems or quantum wells. It consists in monitoring ...

9. Colloques et congrès scientifiques

9.a. Sur invitation

À portée internationale

Waldron, N, Nguyen, N. D, Lin, D, Brammertz, G, Vincent, B, Firrincieli, A, Winderickx, G, Sioncke, S, De Jaeger, B, Wang, G, Mitard, J, Wang, W.-E, Heyns, M, Caymax, M, Meuris, M, Absil, P, & Hoffman, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. 219th ECS Meeting (ECS). Pennington, USA: ECS.

http://hdl.handle.net/2268/77722

As CMOS continues to scales to more advanced nodes, new higher mobility channel materials will have to be introduced as an alternative to Si in order to meet power and performance requirements [1]. III-V and ...

Nguyen, N. D, Wang, G, Waldron, N, Winderickx, G, Brammertz, G, Leys, M, Lismont, K, Dekoster, J, Loo, R, Meuris, M, Degroote, S, Caymax, M, Féron, O, Buttitta, F, O'Neil, B, Lindner, J, Schulte, F, Schineller, B, & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. 218th ECS Meeting, 2010. Pennington, USA: ECS.

http://hdl.handle.net/2268/72767

Nguyen, N. D, Rosseel, E, Takeuchi, S, Everaert, J.-L, Loo, R, Goossens, J, Moussa, A, Clarysse, T, Caymax, M, & Vandervorst, W. (2009). Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology. International Semiconductor Device Research Symposium, 2009. Los Alamitos, USA: IEEE.

http://hdl.handle.net/2268/69101

The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 ...

Vandervorst, W, Eyben, P, Mody, J, Jurczak, M, Nguyen, N. D, Takeuchi, S, Leys, F, Loo, R, Caymax, M, & Everaert, J.-L. (2008). Conformal doping of FINFET's : a fabrication and metrology challenge. Paper presented at 17th International Conference in Ion Implantation Technology, Monterey, USA.

http://hdl.handle.net/2268/68738

9.b. Sur proposition personnelle

Publiées

À portée internationale

Avec peer reviewing

Baert, B, Nakatsuka, O, Zaima, S, & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. 222nd ECS Meeting, 2012. ECS.

http://hdl.handle.net/2268/126180

In this work, we investigated the electrical characteristics of p-GeSn/p-Ge and p-GeSn/n-Ge structures obtained by simulation of the semiconductor equations. We developed a numerical formalism based on a drift ...

Waldron, N, Nguyen, N. D, Lin, D, Brammertz, G, Hellings, G, Vincent, B, Firrincieli, A, Sioncke, S, De Jaeger, B, Wang, G, Krom, R, Mitard, J, Wang, W.-E, Passlack, M, Heyns, M, Caymax, M, Meuris, M, Biesemans, S, & Hoffmann, T. (2010). III-V Devices for Advanced CMOS. 217th ECS Meeting. Pennington, USA: ECS.

http://hdl.handle.net/2268/69096

Park, S.-Y, Anisha, R, Berger, P, Loo, R, Nguyen, N. D, Takeuchi, S, Goossens, J, & Caymax, M. (2009). Zero-Bias Si Backward Diodes Detectors Incorporating P and B δ-Doping Layers Grown by Chemical Vapor Deposition. International Semiconductor Device Research Symposium, 2009. Los Alamitos, USA: IEEE.

http://hdl.handle.net/2268/69116

For the first time, CVD-grown Si only backward diode detectors incorporating ¿doping planes were demonstrated. The best performance of curvature coefficient of 16 V-1 with a junction resistance of 14 k¿ was ...

Nguyen, N. D, Rosseel, E, Takeuchi, S, Everaert, J.-L, Loo, R, Goossens, J, Moussa, A, Clarysse, T, & Vandervorst, W. (2009). Vapor phase doping and sub-melt laser anneal for ultra-shallow extension junctions in sub-32 nm CMOS technology. In S., Chiussi, P., Alpuim, J., Murota, P., Gonzalez, J., Serra, & B., Leon (Eds.), SiNEP 2009. 1st International Workshop on Si based nano-electronics and -photonics. NETBIBLO.

http://hdl.handle.net/2268/69098

Van Huylenbroeck, S, Sibaja-Hernandez, A, Venegas, R, You, S, Winderickx, G, Radisic, D, Lee, W, Ong, P, Vandeweyer, T, Nguyen, N. D, De Meyer, K, & Decoutere, S. (2009). A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009 (pp. 5-8). IEEE.

http://hdl.handle.net/2268/68837

An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.

Takeuchi, S, Nguyen, N. D, Leys, F, Loo, R, Conard, T, Vandervorst, W, & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. 214th ECS Meeting, 2008. Pennington, USA: ECS.

http://hdl.handle.net/2268/69109

Mantl, S, Buca, D, Zhao, Q, Holländer, B, Feste, S, Luysberg, M, Reiche, M, Gösele, U, Buchholtz, W, Wei, A, Horstmann, M, Loo, R, & Nguyen, N. D. (2007). Large current enhancement in n-MOSFETs with strained Si on insulator. International Semiconductor Device Research Symposium, 2007. Los Alamitos, USA: IEEE.

http://hdl.handle.net/2268/68668

As scaling of the critical transistor dimensions below 65 nm has been slowed down, the implementation of novel materials, especially high mobility channel materials is most attractive to boost the transistor ...

Driussi, F, Esseni, D, Selmi, L, Schmidt, M, Lemme, M. C, Kurze, H, Buca, D, Mantl, S, Luysberg, M, Loo, R, Nguyen, N. D, & Reiche, M. (2007). Fabrication, characterization, and modeling of strained SOI MOSFETs with very large effective mobility. In IEEE (Ed.), 37th European Solid State Device Research Conference (ESSDERC) (pp. 315 - 318).

http://hdl.handle.net/2268/68544

Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth ...

Reiche, M, Himcinschi, C, Gösele, U, Christiansen, S, Mantl, S, Buca, D, Zhao, Q. T, Feste, S, Loo, R, Nguyen, N. D, Buchholtz, W, Wei, A, Horstmann, M, Feijoo, D, & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. 211th ECS Meeting, 2007. Pennington, USA: ECS.

http://hdl.handle.net/2268/69097

Communications uniquement orales ou poster

À portée internationale

Baert, B, Gupta, S, Schmeits, M, Simoen, E, & Nguyen, N. D. (2013, June). Study of interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics. Paper presented at The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Fukuoka, Japan.

http://hdl.handle.net/2268/146470

Dewalque, J, Nguyen, N. D, Henrist, C, Cloots, R, & Colson, P. (2013, March). Long term stability of TiO2 templated multilayer films used as high efficiency photoelectrode in liquid DSSCs. Paper presented at Third International Conference on Multifunctional, Hybrid and Nanomaterials (HYMA 2013), Sorrento, Italie.

http://hdl.handle.net/2268/144315

To our knowledge, the stability results reported in the literature only concern cells made from classical doctor-bladed or screen-printed nanoparticles films. This study focuses on the comparison of the ...

Baert, B, & Nguyen, N. D. (2012, June). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures. Paper presented at "Jaszowiec" International School and Conference on the Physics of Semiconductors.

http://hdl.handle.net/2268/117951

Baert, B, Truong, D. Y. N, Nakatsuka, O, Zaima, S, & Nguyen, N. D. (2012). Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy. Paper presented at 6th International SiGe Technology and Device Meeting (ISTDM), Berkeley, CA.

http://hdl.handle.net/2268/115788

You, S, Decoutere, S, Nguyen, N. D, Van Huylenbroeck, S, Sibaja-Hernandez, A, Venegas, R, Loo, R, & De Meyer, K. (2011). Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy. Paper presented at 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium.

http://hdl.handle.net/2268/89265

Nguyen, N. D, Souriau, L, Shimizu, Y, Jiang, S, Rosseel, E, Everaert, J.-L, Delmotte, J, Moussa, A, Clarysse, T, Loo, R, Vandervorst, W, & Caymax, M. (2011). N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal. Paper presented at 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium.

http://hdl.handle.net/2268/89264

Shimizu, Y, Nguyen, N. D, Jiang, S, Rosseel, E, Takeuchi, S, Everaert, J.-L, Loo, R, Vandervorst, W, & Caymax, M. (2010). Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices. Paper presented at 5th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan.

http://hdl.handle.net/2268/69195

Park, S.-Y, Anisha, R, Berger, P, Loo, R, Nguyen, N. D, Takeuchi, S, & Caymax, M. (2009). 200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD. Paper presented at 6th International Conference on Silicon Epitaxy and Heterostructures, Los Angeles, USA.

http://hdl.handle.net/2268/68824

Vandooren, A, Rooyackers, R, Leonelli, D, Iacopi, F, De Gendt, S, Verhulst, A, Heyns, M, Kunnen, E, Nguyen, N. D, Demand, M, Ong, P, Lee, W, Moonens, J, Richard, O, Vandenberghe, W, & Groeseneken, G. (2009). A 35nm diameter vertical silicon nanowire short-gate tunnelFET. Paper presented at Nanotechnology Workshop, Kyoto, Japan.

http://hdl.handle.net/2268/69119

A top-down integration scheme for silicon vertical nanowire (NW) tunnel field-effect transistors (TFETs) with a 35nm nanowire dimension and using state-of-the-art metal gate and high-k gate dielectric is ...

Hikavyy, A, Nguyen, N. D, Loo, R, Ryan, P, Wormington, M, & Hopkins, J. (2008). In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction. Paper presented at 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan.

http://hdl.handle.net/2268/68712

Takeuchi, S, Yang, L, Nguyen, N. D, Loo, R, Conard, T, Pourtois, G, Vandervorst, W, & Caymax, M. (2008). Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling. Paper presented at 4th International Workshop on New Group IV Semiconductor Nanoelectronics, Sendai, Japan.

http://hdl.handle.net/2268/68702

Nguyen, N. D, Leys, F, Takeuchi, S, Loo, R, Caymax, M, Eyben, P, & Vandervorst, W. (2008). Conformal ultra shallow junctions by vapor phase doping with boron. Paper presented at 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan.

http://hdl.handle.net/2268/68716

Buca, D, Trinkaus, H, Holländer, B, Loo, R, Nguyen, N. D, & Mantl, S. (2008). Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer. Paper presented at 4th International SiGe Technology and Device Meeting (ISTDM), Hsinchu, Taiwan.

http://hdl.handle.net/2268/68719

Takeuchi, S, Nguyen, N. D, Leys, F, Loo, R, Conard, T, Vandervorst, W, & Caymax, M. (2008). Vapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy. Paper presented at 8th International Conference on Atomic Layer Deposition (ALD), Bruges, Belgium.

http://hdl.handle.net/2268/68720

Nguyen, N. D, Loo, R, & Caymax, M. (2007). Low-temperature chemical vapor deposition of highly-doped n-type epitaxial Si at high growth rate. Paper presented at Fifth International Symposium on Control of Semiconductor Interfaces, Tokyo, Japan.

http://hdl.handle.net/2268/68546

We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to ...

À portée nationale

11. Rapports

11.a. Rapports de recherche

Internes

11.b. Rapports d'expertise

12. Documents pédagogiques

Nguyen, N. D, & Hoebeke, M. (2002). Physique expérimentale préparatoire aux sciences biomédicales y compris l'introduction mathématique aux sciences expérimentales : Fascicule de travaux dirigés (Université de Liège, PHYS0111-2 Bases physiques et mathématiques des sciences biomédicales).

http://hdl.handle.net/2268/68332