Publications and communications of Ngoc Duy Nguyen

Articles in scientific journals with peer reviewing

Sliti, N., Touihri, S., & Nguyen, N. D. (June 2023). Numerical modeling and analysis of AZO/Cu2O transparent solar cell with a TiO2 buffer layer. Engineering Research Express, 5 (2), 025013. doi:10.1088/2631-8695/accacf

Jiang, L., Xue, C., Marinkovic, S., Fourneau, E., Xu, T.-Q., Cai, X.-W., Nguyen, N. D., Silhanek, A., & Zhou, Y.-H. (01 August 2022). Tunable domino effect of thermomagnetic instabilities in superconducting films with multiply-connected topological structures. New Journal of Physics, 24 (8), 083017. doi:10.1088/1367-2630/ac83e3

Ratz, T., Nguyen, N. D., Brammertz, G., Vermang, B., & Raty, J.-Y. (2022). Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite. Journal of Materials Chemistry A. doi:10.1039/D1TA09620F

Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (30 June 2021). Opto-electronic properties and solar cell efficiency modelling of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites. Journal of Physics : Energy, 3 (3), 035005. doi:10.1088/2515-7655/abefbe

Resende, J., Nguyen, V.-S., Fleischmann, C., Bottiglieri, L., Brochen, S., Vandervorst, W., Favre, W., Jimenez, C., Deschanvres, J.-L., & Nguyen, N. D. (2021). Grain‐boundary segregation of magnesium in doped cuprous oxide and impact on electrical transport properties. Scientific Reports, 11, 7788. doi:10.1038/s41598-021-86969-7

Lombardo, J., Collienne, S., Petrillo, A., Fourneau, E., Nguyen, N. D., & Silhanek, A. (12 November 2019). Electromigration-induced resistance switching in indented Al microstrips. New Journal of Physics, 21 (11), 113015. doi:10.1088/1367-2630/ab5025

Ratz, T., Brammertz, G., Caballero, R., Léon, M., Canulescu, S., Schou, J., Gütay, L., Pareek, D., Taskesen, T., Kim, D.-H., Kang, J.-K., Malerba, C., Redigner, A., Saucedo, E., Shin, B., Tampo, H., Timmo, K., Nguyen, N. D., & Vermang, B. (12 September 2019). Physical routes for the synthesis of kesterite. Journal of Physics : Energy, 1 (4). doi:10.1088/2515-7655/ab281c

Periyannan, S., Manceriu, L., Nguyen, N. D., KLEIN, A., JAEGERMANN, W., Colson, P., Henrist, C., & Cloots, R. (2019). Influence of ZnO Surface Modification on the Photocatalytic Performance of ZnO/NiO Thin Films. Catalysis Letters, 1-12. doi:10.1007/s10562-019-02781-z

Resende, J., Chaix-Pluchery, O., Rovezzi, M., Malier, Y., Renevier, H., Nguyen, N. D., Deschanvres, J.-L., & Jimenez, C. (April 2019). Resilience of Cuprous Oxide under Oxidizing Thermal Treatments via Magnesium Doping. Journal of Physical Chemistry C, 123 (14), 8663-8670. doi:10.1021/acs.jpcc.9b00408

Bellet, D., Lagrange, M., Sannicolo, T., Aghazadehchors, S., Nguyen, V. H., Langley, D., Munoz-Rojas, D., Jimenez, C., Bréchet, Y., & Nguyen, N. D. (May 2017). Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration. Materials, 10, 570. doi:10.3390/ma10060570

Brisbois, J., Gladilin, V. N., Tempere, J., Devreese, J. T., Moshchalkov, V. V., Colauto, F., Motta, M., Johansen, T. H., Fritzsche, J., Adami, O.-A., Nguyen, N. D., Ortiz, W. A., Kramer, R. B. G., & Silhanek, A. (March 2017). Flux penetration in a superconducting film partially capped with a conducting layer. Physical Review. B, 95, 94506. doi:10.1103/PhysRevB.95.094506

Brisbois, J., Motta, M., Avila Osses, J., Shaw, G., Devillers, T., Dempsey, N. M., Veerapandian, S. K. P., Colson, P., Vanderheyden, B., Vanderbemden, P., Ortiz, W. A., Nguyen, N. D., Kramer, R. B. G., & Silhanek, A. (06 June 2016). Imprinting superconducting vortex footsteps in a magnetic layer. Scientific Reports, 6, 27159. doi:10.1038/srep27159

Brisbois, J., Adami, O.-A., Avila Osses, J., Motta, M., Ortiz, W. A., Nguyen, N. D., Vanderbemden, P., Vanderheyden, B., Kramer, R. B. G., & Silhanek, A. (23 February 2016). Magnetic flux penetration in Nb superconducting films with lithographically defined micro-indentations. Physical Review. B, 93 (5), 054521.

Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (August 2015). Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes. Solid-State Electronics, 110, 65-70. doi:10.1016/j.sse.2015.01.007

Brisbois, J., Vanderheyden, B., Colauto, F., Motta, M., Ortiz, W. A., Fritzsche, J., Nguyen, N. D., Hackens, B., Adami, O.-A., & Silhanek, A. (07 October 2014). Classical analogy for the deflection of flux avalanches by a metallic layer. New Journal of Physics, 16 (10), 103003. doi:10.1088/1367-2630/16/10/103003

Langley, D., Lagrange, M., Giusti, G., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (2014). Metallic nanowire networks: effects of thermal annealing on electrical resistance. Nanoscale, 6, 13535. doi:10.1039/c4nr04151h

Waldron, N., Wang, G., Nguyen, N. D., Orzali, T., Merckling, C., Brammertz, G., Ong, P., Winderickx, G., Hellings, G., Eneman, G., Caymax, M., Meuris, M., Horiguchi, N., & Thean, A. (2012). Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique. ECS Transactions, 45, 115. doi:10.1149/1.3700460

Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Windericks, G., Sioncke, S., De Jaeger, B., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffmann, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. ECS Transactions, 35, 299. doi:10.1149/1.3569922

Wang, G., Leys, M., Nguyen, N. D., Loo, R., Richard, O., Bender, H., Heyns, M., & Caymax, M. (2011). Growth of high quality InP layers in STI trenches on miscut Si (001) substrates. Journal of Crystal Growth, 315, 32. doi:10.1016/j.jcrysgro.2010.07.039

Bogdanowicz, J., Dortu, F., Clarysse, T., Vandervorst, W., Rosseel, E., Nguyen, N. D., Shaughnessy, D., Salnick, A., & Nicolaides, L. (2010). Non-destructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves. Journal of Vacuum Science and Technology. Part B, 28 (1), 1C1. doi:10.1116/1.3269737

Nguyen, N. D., Wang, G., Brammertz, G., Leys, M., Waldron, N., Winderickx, G., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Buttita, F., O'Neil, B., Féron, O., Lindner, J., Schulte, F., Schineller, B., Heuken, M., & Caymax, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. ECS Transactions, 33, 933. doi:10.1149/1.3487625

Schineller, B., Nguyen, N. D., & Heuken, M. (2010). Growth of III/V materials on large area silicon. ECS Transactions, 28, 233. doi:10.1149/1.3367955

Wang, G., Nguyen, N. D., Leys, M., Loo, R., Richard, O., Brammertz, G., Meuris, M., Heyns, M., & Caymax, M. (2010). Selective epitaxial growth of InP in STI trenches on off-axis Si(001) substrates. ECS Transactions, 27, 959. doi:10.1149/1.3360736

Buca, D., Minamisawa, R. A., Trinkaus, H., Holländer, B., Nguyen, N. D., Loo, R., & Mantl, S. (2009). Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates. Applied Physics Letters, 95, 144103. doi:10.1063/1.3240409

Nguyen, N. D., Rosseel, E., Takeuchi, S., Everaert, J.-L., Yang, L., Goossens, J., Moussa, A., Clarysse, T., Richard, O., Bender, H., Zaima, S., Sakai, A., Loo, R., Lin, J. C., Vandervorst, W., & Caymax, M. (2009). Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology. Thin Solid Films, 518 (6), 48. doi:10.1016/j.tsf.2009.10.053

Park, S.-Y., Anisha, R., Berger, P., Loo, R., Nguyen, N. D., Takeuchi, S., & Caymax, M. (2009). Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition. IEEE Electron Device Letters, 30, 1173. doi:10.1109/LED.2009.2030989

Takeuchi, S., Nguyen, N. D., Goossens, J., Caymax, M., & Loo, R. (2009). SiGe growth using Si3H8 by low temperature chemical vapor deposition. Thin Solid Films, 518 (6), 18. doi:10.1016/j.tsf.2009.10.047

You, S., Van Huylenbroeck, S., Nguyen, N. D., Sibaja-Hernandez, A., Venegas, R., Van Wichelen, K., Decoutere, S., & De Meyer, K. (2009). Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs. Thin Solid Films, 518 (6), 68. doi:10.1016/j.tsf.2009.10.058

Nguyen, N. D., Loo, R., & Caymax, M. (2008). Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application. Applied Surface Science, 264, 6072. doi:10.1016/j.apsusc.2008.02.194

Reiche, M., Moutanabbir, O., Himcinschi, C., Christiansen, S., Erfurth, E., Gösele, U., Mantl, S., Buca, D., Zhao, Q., Loo, R., Nguyen, N. D., Muster, F., & Petzold, M. (2008). Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation. ECS Transactions, 16, 211. doi:10.1149/1.2982883

Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition. ECS Transactions, 16, 495. doi:10.1149/1.2986806

Nguyen, N. D., Loo, R., Hikavyy, A., Van Daele, B., Ryan, P., Wormington, M., & Hopkins, J. (2007). In-line characterization of heterojunction bipolar transistor base layers by high-resolution x-ray diffraction. ECS Transactions, 10, 151. doi:10.1149/1.2773985

Nguyen, N. D., Schmeits, M., & Loebl, H.-P. (2007). Determination of charge carrier transport properties in organic devices by admittance spectroscopy : application to hole mobility in α-NPD. Physical Review. B, Condensed Matter, 75, 75307. doi:10.1103/PhysRevB.75.075307

Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. ECS Transactions, 6, 339. doi:10.1149/1.2728880

Nguyen, N. D., & Schmeits, M. (2006). Numerical simulation of impedance and admittance of OLEDs. Physica Status Solidi A. Applications and Materials Science, 203, 1901. doi:10.1002/pssa.200622014

Schmeits, M., & Nguyen, N. D. (2005). Small-signal characteristics of organic semiconductors with continuous energy distribution of traps. Physica Status Solidi A. Applications and Materials Science, 202 (2764). doi:10.1002/pssa.200521004

Nguyen, N. D., & Schmeits, M. (2002). The photorefractive effect at large modulation depth in semiconductors with multiple defect levels. Applied Physics. B, Lasers and Optics, 74, 35. doi:10.1007/s003400100764

Nguyen, N. D., Schmeits, M., Germain, M., Schineller, B., & Heuken, M. (2002). Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy. Physica Status Solidi C. Current Topics in Solid State Physics, 288-292. doi:10.1002/pssc.200390045

Nguyen, N. D., Germain, M., Schmeits, M., Evrard, R., Schineller, B., & Heuken, M. (2001). Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers. Journal of Crystal Growth, 230, 596. doi:10.1016/S0022-0248(01)01259-3

Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes. Journal of Applied Physics, 90, 985. doi:10.1063/1.1379345

Nguyen, N. D., Germain, M., Schmeits, M., Schineller, B., & Heuken, M. (2001). Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy. Physica Status Solidi B. Basic Research, 228, 385. doi:10.1002/1521-3951(200111)228:2<385::AID-PSSB385>3.0.CO;2-6

Schmeits, M., Nguyen, N. D., & Germain, M. (2001). Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes. Journal of Applied Physics, 89, 1890. doi:10.1063/1.1339208

El Yacoubi, M., Evrard, R., Nguyen, N. D., & Schmeits, M. (2000). Electrical conduction by interface states in semiconductor heterojunctions. Semiconductor Science and Technology, 15, 341. doi:10.1088/0268-1242/15/4/307

Scientific conferences in universities or research centers

Ratz, T., & Nguyen, N. D. (27 April 2022). Relevance of Ge incorporation on the physics of deep defects in kesterite materials [Paper presentation]. International Conference on Emerging Photovoltaic Materials and Technologies, Turkey.

Scientific congresses and symposiums

Published communications

Baert, B., Nakatsuka, O., Zaima, S., & Nguyen, N. D. (2012). Impedance spectroscopy of GeSn/Ge heterostructures by a numerical method. In 222nd ECS Meeting, 2012. ECS.

Waldron, N., Nguyen, N. D., Lin, D., Brammertz, G., Vincent, B., Firrincieli, A., Winderickx, G., Sioncke, S., De Jaeger, B., Wang, G., Mitard, J., Wang, W.-E., Heyns, M., Caymax, M., Meuris, M., Absil, P., & Hoffman, T. (2011). Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment. In 219th ECS Meeting (ECS). Pennington, United States: ECS.

Nguyen, N. D., Wang, G., Waldron, N., Winderickx, G., Brammertz, G., Leys, M., Lismont, K., Dekoster, J., Loo, R., Meuris, M., Degroote, S., Caymax, M., Féron, O., Buttitta, F., O'Neil, B., Lindner, J., Schulte, F., Schineller, B., & Heuken, M. (2010). Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications. In 218th ECS Meeting, 2010. Pennington, United States: ECS.

Van Huylenbroeck, S., Sibaja-Hernandez, A., Venegas, R., You, S., Winderickx, G., Radisic, D., Lee, W., Ong, P., Vandeweyer, T., Nguyen, N. D., De Meyer, K., & Decoutere, S. (2009). A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture. In IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009 (pp. 5-8). IEEE. doi:10.1109/BIPOL.2009.5314244

Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, N. D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., & Storck, P. (2007). Strained silicon-on-insulator - Fabrication and characterization. In 211th ECS Meeting, 2007. Pennington, United States: ECS.

Oral communications or posters

Baret, A., Bardet Laetitia, Balty, F., Bellet, D., & Nguyen, N. D. (01 June 2023). Bridge percolation: electrical connectivity of discontinued conducting slabs by metallic nanowires [Poster presentation]. EMRS Spring meeting, Strasbourg, France.

Ratz, T., Nguyen, N. D., Brammertz, G., Vermang, B., & Raty, J.-Y. (10 February 2022). Physics of Ge-related point defects in Sn-based, Ge-doped and Ge-alloyed kesterites [Poster presentation]. 12th European Kesterite Workshop, Copenhagen, Denmark.

Ratz, T., Raty, J.-Y., Brammertz, G., Vermang, B., & Nguyen, N. D. (26 November 2020). Study of the opto-electronic properties of Cu2ZnXS4 (X=Sn,Ge,Si) kesterites as input data for solar cell efficiency modelling [Poster presentation]. 11th Kesterite Workshop, Oldenburg, Germany.

Ratz, T., Brammertz, G., Caballero, R., Léon, M., Canulescu, S., Schou, J., Gütay, L., Devandra, P., Taskesen, T., Kim, D.-H., Kang, J.-K., Malerba, C., Redinger, A., Saucedo, E., Shin, B., Tampo, H., Timmo, K., Nguyen, N. D., & Vermang, B. (21 November 2019). History and prospects of the physical synthesis of kesterite for photovoltaic applications [Poster presentation]. Thomas Ratz, Uppsala, Sweden.

Aghazadehchors, S., Nguyen, V., Lagrange, M., Khan, A., Sannicolo, T., Nguyen, N. D., Munoz-Rojas, D., & Bellet, D. (October 2016). Study of the effect of thin ALD oxide coatings on the stability of silver nanowire based transparent electrodes [Poster presentation]. 6th International Symposium on Transparent Conductive Materials, Platanias, Greece.

Avelas Resende, J., Brochen, S., Bergerot, L., Jimenez, C., Nguyen, N. D., & Deschanvres, J.-L. (October 2016). Cation-doped Cu2O as a transparent p-type semiconducting oxide with enhanced performances: A comparison between strontium and magnesium incorporation [Paper presentation]. 6th International Symposium on Transparent Conductive Materials, Platanias, Greece.

Sannicolo, T., Lagrange, M., Xian, S., Munos-Rojas, D., Jimenez, C., Bréchet, Y., Nguyen, N. D., & Bellet, D. (October 2016). Transparent electrodes based on silver nanowire networks: from fundamental aspects to integration into device [Paper presentation]. 6th International Symposium on Transparent Conductive Materials.

Sannicolo, T., Lagrange, M., Xian, S., Munoz-Rojas, D., Moreau, S., Bréchet, Y., Nguyen, N. D., Celle, C., Simonato, J.-P., & Bellet, D. (September 2016). Flexible Transparent Electrodes based on Silver Nanowire Networks: Nanoscale Characterisation, Electrical Percolation, and Integration into Devices [Paper presentation]. 11th International Conference on Surface Coatings and Nanostructured Materials, Aveiro, Portugal.

Avelas Resende, J., Nguyen, N. D., Deschanvres, J.-L., & Jimenez, C. (September 2015). Magnesium-doped Cuprous Oxide (Mg:Cu2O) thin films as a transparent p-type semiconductor oxide [Poster presentation]. 2015 E-MRS Fall Meeting and Exhibit, Warsaw, Poland.

Nguyen, N. D. (May 2015). An atomic layer deposition approach to ultra-shallow doping of silicon [Paper presentation]. XXXVIII ENFMC Brazilian Physical Society Meeting.

Baert, B., Cerica, D., Schmeits, M., & Nguyen, N. D. (13 November 2014). Electrical modelling of interface traps in GeSn MOS structures [Paper presentation]. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, Leuven, Belgium.

Baert, B., Gupta, S., Gencarelli, F., Loo, R., Simoen, E., & Nguyen, N. D. (03 June 2014). Electrical characterization of pGeSn/nGe diodes [Paper presentation]. 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore. doi:10.1109/ISTDM.2014.6874640

Baert, B., & Nguyen, N. D. (June 2012). Numerical Simulation of the Electrical Characteristics of GeSn/Ge Semiconducting Heterostructures [Poster presentation]. "Jaszowiec" International School and Conference on the Physics of Semiconductors.

Takeuchi, S., Nguyen, N. D., Leys, F., Loo, R., Conard, T., Vandervorst, W., & Caymax, M. (2008). Vapor phase doping: an atomic layer deposition approach to n-type doping in classical chemical vapor deposition epitaxy [Paper presentation]. 8th International Conference on Atomic Layer Deposition (ALD), Bruges, Belgium.

Vandervorst, W., Eyben, P., Mody, J., Jurczak, M., Nguyen, N. D., Takeuchi, S., Leys, F., Loo, R., Caymax, M., & Everaert, J.-L. (2008). Conformal doping of FINFET's : a fabrication and metrology challenge [Paper presentation]. 17th International Conference in Ion Implantation Technology, Monterey, United States.

Book chapters and contributions to collective works

Bellet, D., Papanastasiou, D., Resende, J., Nguyen, V. H., Jimenez, C., Nguyen, N. D., & Munoz-Rojas, D. (2019). Metallic nanowire percolating networks: from main properties to applications. In Nanosystems. London, United Kingdom: IntechOpen. doi:10.5772/intechopen.89281

Learning materials

Course notes

Nguyen, N. D., & Hoebeke, M. (2002). Physique expérimentale préparatoire aux sciences biomédicales y compris l'introduction mathématique aux sciences expérimentales : Fascicule de travaux dirigés. (ULiège - Université de Liège, PHYS0111-2 Bases physiques et mathématiques des sciences biomédicales).