Reference : Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing ...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/98546
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
English
Waldron, Niamh [IMEC > > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Lin, Dennis [IMEC > > > >]
Brammertz, Guy [IMEC > > > >]
Vincent, Benjamin [IMEC > > > >]
Firrincieli, Andrea [IMEC > > > >]
Windericks, Gillis [IMEC > > > >]
Sioncke, Sonja [IMEC > > > >]
De Jaeger, Brice [IMEC > > > >]
Mitard, Jerome [IMEC > > > >]
Wang, Wei-E [IMEC > > > >]
Heyns, Marc [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
Meuris, Marc [IMEC > > > >]
Absil, Philippe [IMEC > > > >]
Hoffmann, Thomas [IMEC > > > >]
2011
ECS Transactions
The Electrochemical Society
35
299
Yes
International
1938-5862
1938-6737
Pennington
NJ
[en] CMOS ; III-V ; Device integration
[en] We report on the fabrication of MOS capacitors on 200 mm virtual GaAs substrates using a Si CMOS processing environment. The fabricated capacitors were comparable to those processed on bulk GaAs material. Topside contact was made to the GaAs using a novel CMOS compatible self-aligned NiGe contact scheme resulting in a measured contact resistance of 0.26 [ohm sign].cm. Cross-contamination from various III-V substrates was investigated and it was found that by limiting the thermal budget to <= 300C cross-contamination from the outgassing of In, Ga and As could be eliminated. For wet processing the judicious choice of recipe and processing conditions resulted in no significant cross-contamination being detected as determined by TXRF monitoring. This achievement enables III-V device production using state-of-the-art Si processing equipment.
Researchers ; Professionals
http://hdl.handle.net/2268/98546
10.1149/1.3569922

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