Reference : Admittance spectroscopy study of NiGe contact on GeSn
Scientific congresses and symposiums : Unpublished conference
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/98545
Admittance spectroscopy study of NiGe contact on GeSn
English
Truong, Dao Y Nhi mailto [Université de Liège - ULg > > > 2e an. master sc. chimiques, fin. appr.]
Vertruyen, Bénédicte mailto [Université de Liège - ULg > Département de chimie (sciences) > Chimie inorganique structurale >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
2011
No
International
3rd EMMI/ FAME Master Research Workshop – Functionalized materials for a competitive and sustainable society
17-19/07/2011
UCL - Ecole Polytechnique de Louvain
Louvain-la-Neuve
Belgium
[en] GeSn ; Admittance spectroscopy ; NiGe contact
[en] The direct gap semiconductor germanium tin (GeSn) is an attractive material for next-generation devices in nanoelectronics as well as in photovoltaic applications. However, its detailed electronic properties have not yet been clearly understood. Recently, admittance spectroscopy has become a popular analytical tool in materials research and development because it involves a relatively simple electrical measurement whose results may establish accurate characteristics of materials.

The aim of this work is to study the effects of the annealing temperature on the electrical nature (rectifying or non-rectifying) of the metal contact by admittance spectroscopy. A numerical method, which is based on the solution of the basic semiconductor equations, is applied to simulate the material structure. From the calculation of microscopic quantities such as the modulated carrier concentrations and current densites, we can compute the theoretical admittance and impedance curves as function of frequency and external parameters (temperature and steady-state voltage) and then extract information on the electrical properties of the heterostructure.
By a detailed investigation of the impact of microscopic parameters such as the dopant concentrations and the metal barrier height on the electrical characteristics, our objective is to understand the mechanisms of charge transport between the two electrodes.
Erasmus Mundus FAME
Researchers ; Professionals ; Students
http://hdl.handle.net/2268/98545

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