ORBi: Nguyen Ngoc Duy - Ultra-low p-type doping of epitaxial Si for CMOS imagers : Assessment of the background doping level of the CVD reactor

Reference : Ultra-low p-type doping of epitaxial Si for CMOS imagers : Assessment of the background ...


	Document type :	Reports : Internal report
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	To cite this reference:	http://hdl.handle.net/2268/98544

Title :	Ultra-low p-type doping of epitaxial Si for CMOS imagers : Assessment of the background doping level of the CVD reactor
Language :	English
Author, co-author :	Nguyen, Ngoc Duy [IMEC > > > >]
Publication date :	2009
Report number :	PR08.0599
Keywords :	[en] Boron doping ; CVD reactor ; Epitaxial growth
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/98544

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