ORBi: Nguyen Ngoc Duy - Low-temperature epitaxial growth of heavily-doped n-Si layers for the monocrystalline emitter in bipolar transistors

Reference : Low-temperature epitaxial growth of heavily-doped n-Si layers for the monocrystalline em...


	Document type :	Reports : Internal report
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	To cite this reference:	http://hdl.handle.net/2268/98541

Title :	Low-temperature epitaxial growth of heavily-doped n-Si layers for the monocrystalline emitter in bipolar transistors
Language :	English
Author, co-author :	Nguyen, Ngoc Duy [IMEC > > > >]
Publication date :	2008
Keywords :	[en] Low-temperature chemical vapor deposition ; Heavy doping ; Epitaxial growth ; Monocrystalline emitter ; BiCMOS
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/98541

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