Reference : Low-temperature epitaxial growth of heavily-doped n-Si layers for the monocrystalline...
Reports : Internal report
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/98541
Low-temperature epitaxial growth of heavily-doped n-Si layers for the monocrystalline emitter in bipolar transistors
English
Nguyen, Ngoc Duy mailto [IMEC > > > >]
2008
[en] Low-temperature chemical vapor deposition ; Heavy doping ; Epitaxial growth ; Monocrystalline emitter ; BiCMOS
Researchers ; Professionals
http://hdl.handle.net/2268/98541

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