Reference : Spontaneous 2-Dimensional Carrier Confinement at the n-Type SrTiO3=LaAlO3 Interface
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/92965
Spontaneous 2-Dimensional Carrier Confinement at the n-Type SrTiO3=LaAlO3 Interface
English
Delugas, P. [> >]
Filippetti, A. [> >]
Fiorentini, V. [> >]
Bilc, Daniel mailto [Université de Liège - ULg > Département de physique > Physique théorique des matériaux >]
Fontaine, Denis mailto [Université de Liège - ULg > Département de physique > Physique théorique des matériaux >]
Ghosez, Philippe mailto [Université de Liège - ULg > Département de physique > Physique théorique des matériaux >]
2011
Physical Review Letters
American Physical Society
106
166807
Yes (verified by ORBi)
International
0031-9007
1079-7114
Ridge
NY
[en] We describe the intrinsic mechanism of 2-dimensional electron confinement at the n-type
SrTiO3=LaAlO3 interface as a function of the sheet carrier density ns via advanced first-principles
calculations. Electrons localize spontaneously in Ti 3dxy levels within a thin (& 2 nm) interface-adjacent SrTiO3 region for ns lower than a threshold value nc 1014 cm 2. For ns >nc a portion of charge flows into Ti 3dxz-dyz levels extending farther from the interface. This intrinsic confinement can be attributed to the interface-induced symmetry breaking and localized nature of Ti 3d t2g states. The sheet carrier density directly controls the binding energy and the spatial extension of the conductive region. A direct, quantitative relation of these quantities with ns is provided.
Researchers ; Professionals ; Students
http://hdl.handle.net/2268/92965
10.1103/PhysRevLett.106.166807

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