Article (Scientific journals)
Electronic and thermoelectric properties of Fe2VAl: The role of defects and disorder
Bilc, Daniel; Ghosez, Philippe
2011In Physical Review. B, Condensed Matter and Materials Physics, 83, p. 205204
Peer Reviewed verified by ORBi
 

Files


Full Text
2011-PRB83-205204.pdf
Publisher postprint (841.41 kB)
Request a copy

All documents in ORBi are protected by a user license.

Send to



Details



Abstract :
[en] Using first-principles calculations, we show that Fe2VAl is an indirect band-gap semiconductor. Our calculations reveal that its semimetallic character (which is sometimes assigned) is not an ntrinsic property but originates from magnetic antisite defects and site disorder, which introduce localized in-gap and resonant states changing the electronic properties close to the band gap. These states negatively affect the thermopower S and the power factor equal to S2σ, decreasing the good thermoelectric performance of intrinsic Fe2VAl.
Disciplines :
Physics
Author, co-author :
Bilc, Daniel ;  Université de Liège - ULiège > Département de physique > Physique théorique des matériaux
Ghosez, Philippe  ;  Université de Liège - ULiège > Département de physique > Physique théorique des matériaux
Language :
English
Title :
Electronic and thermoelectric properties of Fe2VAl: The role of defects and disorder
Publication date :
2011
Journal title :
Physical Review. B, Condensed Matter and Materials Physics
ISSN :
1098-0121
eISSN :
1550-235X
Publisher :
American Physical Society, Woodbury, United States - New York
Volume :
83
Pages :
205204
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 15 June 2011

Statistics


Number of views
124 (5 by ULiège)
Number of downloads
3 (3 by ULiège)

Scopus citations®
 
70
Scopus citations®
without self-citations
65
OpenCitations
 
58

Bibliography


Similar publications



Contact ORBi