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Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances
Dubreuil, Olivier; Caubet-Hilloutou, Véronique; Guillan, Julie et al.
2010In Microelectronic Engineering, 87 (3)
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Keywords :
Copper interconnect; Overburden; Recrystallization; FIB microscopy; Texture
Abstract :
[en] During first metal level interconnects fabrication, a controlled modification of the electro-deposited copper over-deposition (overburden) is performed using a partial chemical–mechanical polishing (CMP) step. Next, copper microstructure is stabilized with a short duration hot-plate anneal. Overburden is then removed during CMP end-of-step. Ionic microscopy and EBSD observations of overburden thickness reduction reveal that copper grain growth occurs differently, according to patterned geometries and with a strong (1 1 1) texture, as observed in modified films. Reduction of overburden thickness also reveals the capacity of anneal temperature to impact electrical performances. Reliability is impacted for thinnest wires.
Research center :
STMicroelectronics (Crolles 300)
Laboratoire des Matériaux et du Génie Physique (LMGP-Université de Grenoble)
Disciplines :
Physics
Author, co-author :
Dubreuil, Olivier ;  Université de Liège - ULiège > Département de chimie (sciences) > LCIS - GreenMAT
Caubet-Hilloutou, Véronique
Guillan, Julie
Haxaire, Katia
Mellier, Maxime
Caubet, Pierre
Vannier, Patrick
Petitprez, Emmanuel
Bellet, Daniel
Normandon, Philippe
Language :
English
Title :
Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances
Publication date :
March 2010
Event name :
Materials for Advanced Metallization 2009
Audience :
International
Journal title :
Microelectronic Engineering
ISSN :
0167-9317
Publisher :
Elsevier Science
Special issue title :
Materials for Advanced Metallization 2009
Volume :
87
Issue :
3
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 28 April 2011

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