Reference : Characterization and impact of reduced copper plating overburden on 45 nm interconnec...
Scientific congresses and symposiums : Paper published in a journal
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/89739
Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances
English
Dubreuil, Olivier mailto [Université de Liège - ULg > Département de chimie (sciences) > LCIS - GreenMAT >]
Caubet-Hilloutou, Véronique [ > > ]
Guillan, Julie [ > > ]
Haxaire, Katia [ > > ]
Mellier, Maxime [ > > ]
Caubet, Pierre [ > > ]
Vannier, Patrick [ > > ]
Petitprez, Emmanuel [ > > ]
Bellet, Daniel [ > > ]
Normandon, Philippe [ > > ]
Mar-2010
Microelectronic Engineering
Elsevier Science
87
3
Materials for Advanced Metallization 2009
Yes (verified by ORBi)
No
International
0167-9317
Materials for Advanced Metallization 2009
[en] Copper interconnect ; Overburden ; Recrystallization ; FIB microscopy ; Texture
[en] During first metal level interconnects fabrication, a controlled modification of the electro-deposited copper over-deposition (overburden) is performed using a partial chemical–mechanical polishing (CMP) step. Next, copper microstructure is stabilized with a short duration hot-plate anneal. Overburden is then removed during CMP end-of-step. Ionic microscopy and EBSD observations of overburden thickness reduction reveal that copper grain growth occurs differently, according to patterned geometries and with a strong (1 1 1) texture, as observed in modified films. Reduction of overburden thickness also reveals the capacity of anneal temperature to impact electrical performances. Reliability is impacted for thinnest wires.
STMicroelectronics (Crolles 300) ; Laboratoire des Matériaux et du Génie Physique (LMGP-Université de Grenoble)
Researchers ; Professionals
http://hdl.handle.net/2268/89739
10.1016/j.mee.2009.07.002

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