Reference : Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane ba...
Scientific congresses and symposiums : Unpublished conference
Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
http://hdl.handle.net/2268/89265
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
English
You, Shuzhen [Imec > > > >]
Decoutere, Stefaan [Imec > > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Van Huylenbroeck, Stefaan [Imec > > > >]
Sibaja-Hernandez, Arturo [Imec > > > >]
Venegas, Rafael [Imec > > > >]
Loo, Roger [Imec > > > >]
De Meyer, Kristin [Katholieke Universiteit Leuven - KUL and Imec > ESAT > > >]
2011
Yes
International
7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
28/08/2011-01/09/2011
Imec, CEA/Leti, KUL, ULg
Leuven
Belgium
[en] SiGe ; Heterojunction bipolar transistor ; Emitter doping ; Trisilane ; Low-temperature epitaxy ; Ge spike
Researchers ; Professionals
http://hdl.handle.net/2268/89265

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