Unpublished conference/Abstract (Scientific congresses and symposiums)
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
You, Shuzhen; Decoutere, Stefaan; Nguyen, Ngoc Duy et al.
20117th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
 

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Keywords :
SiGe; Heterojunction bipolar transistor; Emitter doping; Trisilane; Low-temperature epitaxy; Ge spike
Disciplines :
Physical, chemical, mathematical & earth Sciences: Multidisciplinary, general & others
Author, co-author :
You, Shuzhen;  Imec
Decoutere, Stefaan;  Imec
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Van Huylenbroeck, Stefaan;  Imec
Sibaja-Hernandez, Arturo;  Imec
Venegas, Rafael;  Imec
Loo, Roger;  Imec
De Meyer, Kristin;  Katholieke Universiteit Leuven - KUL and Imec > ESAT
Language :
English
Title :
Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
Publication date :
2011
Event name :
7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
Event organizer :
Imec, CEA/Leti, KUL, ULg
Event place :
Leuven, Belgium
Event date :
28/08/2011-01/09/2011
Audience :
International
Available on ORBi :
since 19 April 2011

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