ORBi: You Shuzhen - Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy

Reference : Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane ba...


	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Multidisciplinary, general & others
	To cite this reference:	http://hdl.handle.net/2268/89265

Title :	Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
Language :	English
Author, co-author :	You, Shuzhen [Imec > > > >]
	Decoutere, Stefaan [Imec > > > >]
	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
	Van Huylenbroeck, Stefaan [Imec > > > >]
	Sibaja-Hernandez, Arturo [Imec > > > >]
	Venegas, Rafael [Imec > > > >]
	Loo, Roger [Imec > > > >]
	De Meyer, Kristin [Katholieke Universiteit Leuven - KUL and Imec > ESAT > > >]
Publication date :	2011
Audience :	International
Event name :	7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
Event date :	28/08/2011-01/09/2011
Event organizer :	Imec, CEA/Leti, KUL, ULg
Event place (city) :	Leuven
Event country :	Belgium
Keywords :	[en] SiGe ; Heterojunction bipolar transistor ; Emitter doping ; Trisilane ; Low-temperature epitaxy ; Ge spike
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/89265

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