Reference : N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
Scientific congresses and symposiums : Unpublished conference
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/89264
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
English
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Souriau, Laurent [Imec > > > >]
Shimizu, Yasuo [Tohoku University > Institute for Materials Research > > >]
Jiang, Sijia [Imec > > > >]
Rosseel, Erik [Imec > > > >]
Everaert, Jean-Luc [Imec > > > >]
Delmotte, Joris [Imec > > > >]
Moussa, Alain [Imec > > > >]
Clarysse, Trudo [Imec > > > >]
Loo, Roger [Imec > > > >]
Vandervorst, Wilfried [Katholieke Universiteit Leuven - KUL and Imec > Department of Physics - IKS > > >]
Caymax, Matty [Imec > > > >]
2011
Yes
International
7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
28/08/2011-01/09/2011
Imec, CEA/Leti, KUL, ULg
Leuven
Belgium
[en] Ultra shallow junction ; Atomic layer epitaxy ; Vapor phase doping ; Laser anneal
Researchers ; Professionals
http://hdl.handle.net/2268/89264

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