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Unpublished conference/Abstract (Scientific congresses and symposiums)
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
Nguyen, Ngoc Duy; Souriau, Laurent; Shimizu, Yasuo et al.
2011 • 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
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Keywords :
Ultra shallow junction; Atomic layer epitaxy; Vapor phase doping; Laser anneal
Disciplines :
Physics
Author, co-author :
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Souriau, Laurent;  Imec
Shimizu, Yasuo;  Tohoku University > Institute for Materials Research
Jiang, Sijia;  Imec
Rosseel, Erik;  Imec
Everaert, Jean-Luc;  Imec
Delmotte, Joris;  Imec
Moussa, Alain;  Imec
Clarysse, Trudo;  Imec
Loo, Roger;  Imec
Vandervorst, Wilfried;  Katholieke Universiteit Leuven - KUL and Imec > Department of Physics - IKS
Caymax, Matty;  Imec
Language :
English
Title :
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
Publication date :
2011
Event name :
7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
Event organizer :
Imec, CEA/Leti, KUL, ULg
Event place :
Leuven, Belgium
Event date :
28/08/2011-01/09/2011
Audience :
International
Available on ORBi :
since 19 April 2011

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