ORBi: Nguyen Ngoc Duy - N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal

Reference : N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal


	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/2268/89264

Title :	N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
Language :	English
Author, co-author :	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
	Souriau, Laurent [Imec > > > >]
	Shimizu, Yasuo [Tohoku University > Institute for Materials Research > > >]
	Jiang, Sijia [Imec > > > >]
	Rosseel, Erik [Imec > > > >]
	Everaert, Jean-Luc [Imec > > > >]
	Delmotte, Joris [Imec > > > >]
	Moussa, Alain [Imec > > > >]
	Clarysse, Trudo [Imec > > > >]
	Loo, Roger [Imec > > > >]
	Vandervorst, Wilfried [Katholieke Universiteit Leuven - KUL and Imec > Department of Physics - IKS > > >]
	Caymax, Matty [Imec > > > >]
Publication date :	2011
Audience :	International
Event name :	7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
Event date :	28/08/2011-01/09/2011
Event organizer :	Imec, CEA/Leti, KUL, ULg
Event place (city) :	Leuven
Event country :	Belgium
Keywords :	[en] Ultra shallow junction ; Atomic layer epitaxy ; Vapor phase doping ; Laser anneal
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/89264

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