Paper published in a book (Scientific congresses and symposiums)
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
Waldron, Niamh; Nguyen, Ngoc Duy; Lin, Dennis et al.
2011In 219th ECS Meeting
 

Files


Full Text
Waldron_Nguyen_ECS_219_1214_Spring_2011.pdf
Publisher postprint (940.51 kB)
Download

All documents in ORBi are protected by a user license.

Send to



Details



Keywords :
III-V; CMOS; Device fabrication
Abstract :
[en] As CMOS continues to scales to more advanced nodes, new higher mobility channel materials will have to be introduced as an alternative to Si in order to meet power and performance requirements [1]. III-V and Ge materials have emerged as an attractive option for nMOS and pMOS respectively. However, from an economical and technological standpoint it must be possible to implement III-V devices in a Si CMOS fabrication environment to leverage the advantages of both large scale wafers and state-of-the-art Si equipment. The integration challenges of introducing III-V into a Si line include safety risk assessments from toxic materials, maintenance of tools after processing III-V, cross-contamination from high- temperature and wet etch steps, and modifying standard recipes where III-V is exposed on the surface. In this work we demonstrate the feasibility of processing III-V virtual substrates in a Si line following a CMOS based approach that seeks to minimize any potential cross- contamination from the III-V.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Waldron, Niamh;  IMEC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Lin, Dennis;  IMEC
Brammertz, Guy;  IMEC
Vincent, Benjamin;  IMEC
Firrincieli, Andrea;  Katholieke Universiteit Leuven - KUL and IMEC > Department of Metallurgy and Materials Engineering
Winderickx, Gillis;  IMEC
Sioncke, Sonja;  IMEC
De Jaeger, Brice;  IMEC
Wang, Gang;  IMEC
Mitard, Jérôme;  IMEC
Wang, Wei-E;  IMEC
Heyns, Marc;  Katholieke Universiteit Leuven - KUL and IMEC > Department of Metallurgy and Materials Engineering
Caymax, Matty;  IMEC
Meuris, Marc;  IMEC
Hoffman, Thomas;  IMEC
More authors (7 more) Less
Language :
English
Title :
Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment
Publication date :
2011
Event name :
219th ECS Meeting
Event organizer :
ECS
Event place :
Montreal, Canada
Event date :
1-6/5/2011
By request :
Yes
Audience :
International
Main work title :
219th ECS Meeting
Publisher :
ECS, Pennington, United States
Edition :
ECS
ISBN/EAN :
2151-2043
Collection name :
ECS Meeting Abstracts MA2011-01
Available on ORBi :
since 26 November 2010

Statistics


Number of views
211 (3 by ULiège)
Number of downloads
246 (1 by ULiège)

Bibliography


Similar publications



Contact ORBi