Article (Scientific journals)
Laser-assisted dielectronic recombination in C4+ ions
Bachau, H.; Gayet, R.; Lambropoulos, P. et al.
1998In Journal of Physics : B Atomic Molecular and Optical Physics, 31 (14), p. 3263-3280
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Abstract :
[en] We study the effect of laser-driven transitions between autoionizing resonances on the dielectronic recombination rates observed after the formation of such resonances in electron-ion collisions. The autoionizing states of S-1(e) and P-1(0) symmetry belonging to the 2l2l' and 2l3l' configurations of C4+ are considered. The resonance parameters are calculated in the Feshbach formalism and compared with other accurate calculations, and transition dipole moments between the autoionizing states are obtained. The rates of dielectronic recombination and autoionization under the influence of the laser field are calculated using the density matrix approach for realistic parameters. A simple formulation of the problem is also proposed in the resolvent operator technique. The feasibility of an experiment is discussed.
Disciplines :
Physics
Author, co-author :
Bachau, H.
Gayet, R.
Lambropoulos, P.
Schlagheck, Peter ;  Université de Liège - ULiège > Département de physique > Physique quantique statistique
Wolf, A.
Language :
English
Title :
Laser-assisted dielectronic recombination in C4+ ions
Publication date :
1998
Journal title :
Journal of Physics : B Atomic Molecular and Optical Physics
ISSN :
0953-4075
eISSN :
1361-6455
Publisher :
Institute of Physics, Bristol, United Kingdom
Volume :
31
Issue :
14
Pages :
3263-3280
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 05 November 2010

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