Article (Scientific journals)
Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates
Wang, Gang; Leys, Maarten; Nguyen, Ngoc Duy et al.
2010In Journal of the Electrochemical Society, 157 (11), p. 1023
Peer Reviewed verified by ORBi
 

Files


Full Text
Wang_JES_157_H1023_2010.pdf
Publisher postprint (630.84 kB)
Request a copy

All documents in ORBi are protected by a user license.

Send to



Details



Keywords :
Selective area growth; InP; Shallow trench isolation; Si substrate
Abstract :
[en] In this paper, we report a comprehensive investigation of InP selective growth in shallow trench isolation (STI) structures on Si(001) substrates 6° off-cut toward (111). Extended defect-free InP layers were obtained in the top region of 100 nm wide trenches. A thin Ge epitaxial layer was used as an intermediate buffer layer between the Si substrate and the InP layer. A Ge buffer was used to reduce the thermal budget for surface clean and to promote double-step formation on the surfaces. Baking the Ge surface in an As ambient improved the InP surface morphology and crystalline quality. InP showed highly selective growth in trenches without nucleation on SiO2. However, strong loading effects were observed at all growth pressures, which induced variation in local growth rates. We found trench orientation dependence of facet and stacking fault formation. More stacking faults and nanotwins originated from the STI sidewalls in (110) trenches. High quality InP layers were obtained in the top of the trenches along (110). The stacking faults generated by the dissociation of threading dislocations are trapped at the bottom of the trenches with an aspect ratio greater than 2.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Wang, Gang;  IMEC
Leys, Maarten;  IMEC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Loo, Roger;  IMEC
Brammertz, Guy;  IMEC
Richard, Olivier;  IMEC
Bender, Hugo;  IMEC
Dekoster, Johan;  IMEC
Meuris, Marc;  IMEC
Heyns, Marc;  Katholieke Universiteit Leuven - KUL and IMEC > Department of Metallurgy and Materials Engineering
Caymax, Matty;  IMEC
Language :
English
Title :
Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates
Publication date :
September 2010
Journal title :
Journal of the Electrochemical Society
ISSN :
0013-4651
eISSN :
1945-7111
Publisher :
Electrochemical Society, Pennington, United States
Volume :
157
Issue :
11
Pages :
H1023
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 26 September 2010

Statistics


Number of views
146 (9 by ULiège)
Number of downloads
1 (1 by ULiège)

Scopus citations®
 
40
Scopus citations®
without self-citations
22
OpenCitations
 
28

Bibliography


Similar publications



Contact ORBi