Reference : Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for ...
Scientific congresses and symposiums : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/72767
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
English
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Wang, Gang [IMEC > > > >]
Waldron, Niamh [IMEC > > > >]
Winderickx, Gillis [IMEC > > > >]
Brammertz, Guy [IMEC > > > >]
Leys, Maarten [IMEC > > > >]
Lismont, Kevin [IMEC > > > >]
Dekoster, Johan [IMEC > > > >]
Loo, Roger [IMEC > > > >]
Meuris, Marc [IMEC > > > >]
Degroote, Stefan [EpiGaN bvba > > > >]
Caymax, Matty [IMEC > > > >]
Féron, Olivier [AIXTRON AG > > > >]
Buttitta, Francesco [AIXTRON AG > > > >]
O'Neil, Barry [AIXTRON AG > > > >]
Lindner, Johannes [AIXTRON AG > > > >]
Schulte, Frank [AIXTRON AG > > > >]
Schineller, Bernd [AIXTRON AG > > > >]
Heuken, Michael [AIXTRON AG > > > >]
2010
218th ECS Meeting, 2010
ECS
ECS Meeting Abstracts MA2010-02
No
Yes
International
2151-2043
Pennington
USA
218th ECS Meeting, 2010
10-15/10/2010
ECS
Las Vegas
USA
[en] Selective epitaxial growth ; III-V ; CMOS
Researchers ; Professionals
http://hdl.handle.net/2268/72767

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