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Paper published in a book (Scientific congresses and symposiums)
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
Nguyen, Ngoc Duy; Wang, Gang; Waldron, Niamh et al.
2010 • In 218th ECS Meeting, 2010
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https://hdl.handle.net/2268/72767
 

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Keywords :
Selective epitaxial growth; III-V; CMOS
Disciplines :
Electrical & electronics engineering
Author, co-author :
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Wang, Gang;  IMEC
Waldron, Niamh;  IMEC
Winderickx, Gillis;  IMEC
Brammertz, Guy;  IMEC
Leys, Maarten;  IMEC
Lismont, Kevin;  IMEC
Dekoster, Johan;  IMEC
Loo, Roger;  IMEC
Meuris, Marc;  IMEC
Degroote, Stefan;  EpiGaN bvba
Caymax, Matty;  IMEC
Féron, Olivier;  AIXTRON AG
Buttitta, Francesco;  AIXTRON AG
O'Neil, Barry;  AIXTRON AG
Lindner, Johannes;  AIXTRON AG
Schulte, Frank;  AIXTRON AG
Schineller, Bernd;  AIXTRON AG
Heuken, Michael;  AIXTRON AG
More authors (9 more) Less
Language :
English
Title :
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
Publication date :
2010
Event name :
218th ECS Meeting, 2010
Event organizer :
ECS
Event place :
Las Vegas, United States
Event date :
10-15/10/2010
By request :
Yes
Audience :
International
Main work title :
218th ECS Meeting, 2010
Publisher :
ECS, Pennington, United States
ISBN/EAN :
2151-2043
Collection name :
ECS Meeting Abstracts MA2010-02
Available on ORBi :
since 23 September 2010

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