ORBi: Loo Roger - Epitaxial Si, SiGe and Ge for high-performance devices

Reference : Epitaxial Si, SiGe and Ge for high-performance devices


	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	To cite this reference:	http://hdl.handle.net/2268/71424

Title :	Epitaxial Si, SiGe and Ge for high-performance devices
Language :	English
Author, co-author :	Loo, Roger [IMEC > > > >]
	Hikavyy, Andriy [IMEC > > > >]
	Vincent, Benjamin [IMEC > > > >]
	Wang, Gang [IMEC > > > >]
	Vanherle, Wendy [IMEC > > > >]
	Gencarelli, Federica [IMEC > > > >]
	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
	Rosseel, Erik [IMEC > > > >]
	Souriau, Laurent [IMEC > > > >]
	Rondas, Dirk [IMEC > > > >]
	Dekoster, Johan [IMEC > > > >]
	Caymax, Matty [IMEC > > > >]
Publication date :	23-Sep-2010
On invitation :	Yes
Audience :	International
Event name :	ASM User Meeting
Event date :	23/09/2010
Event organizer :	ASM
Event place (city) :	Munich
Event country :	Germany
Keywords :	[en] Epitaxy ; CVD ; Si ; Ge ; SiGe ; High-performance device
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/71424

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