Si-precursor; Trisilane; Low-temperature chemical vapor deposition; Growth rate; n-Type doping
Abstract :
[en] We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application.
Caymax M.R., and Leong W. Low thermal budget chemical vapour deposition techniques for Si and SiGe. In: Nijs J.F. (Ed). Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices (1994), Institute of Physics Publishing, Bristol
Loo R., et al. ECS Transactions 3 (2006) 453
Bauer M, ICSI-5 Book of Abstracts 2007 9
Choi L.J., et al. IEEE Trans. Electron Devices 28 (2007) 270
Sturm J.C., Chung K., Sanchez E., Singh K.K.K., and Kuppurao S. ECS Meet. Abstr. 701 (2007) 606
Agnello P., Sedgwick T.O., and Cotte J. J. Electrochem. Soc. 140 (1993) 2703
Ygartua C., and Liaw M. Thin Solid Films 313-314 (1998) 237
R. Loo, M. Caymax, G. Blavier, S. Kremer, in: G. Kissinger, L.H. Weiland, Proc. SPIE 4406 (2001) 131.
Sze S.M. Physics of Semiconductor Devices (1981), J. Wiley and Sons p. 32
Loo R., et al. ECS Proceedings Volume 2004-07 (2004) 1123
Mueller D.C., and Fichtner W. Phys. Rev. B 70 (2004) 245207