Reference : Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor ...
Scientific journals : Article
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/69479
Low-temperature epitaxy of highly-doped n-type Si at high growth rate by chemical vapor deposition for bipolar transistor application
English
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, Roger [IMEC > > > > > >]
Caymax, Matty [IMEC > > > >]
2008
Applied Surface Science
Elsevier Science
264
6072
Yes (verified by ORBi)
International
0169-4332
Amsterdam
The Netherlands
[en] Si-precursor ; Trisilane ; Low-temperature chemical vapor deposition ; Growth rate ; n-Type doping
[en] We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus by means of low-temperature chemical vapor deposition using trisilane as Si-precursor. Indeed, in order to prevent the alteration of the characteristics of the devices which are already present on the wafer, an epitaxy process at low temperature is highly desired for applications such as BiCMOS. In this work, the varying parameters are the deposition temperature, the Si-precursor mass flow and the dopant gas flow. As a result, a process for the deposition of heavily doped epilayers was demonstrated at 600 °C with high deposition rate, which is important for maintaining high throughput and low process cost. We showed that using trisilane as a Si-precursor resulted in a much more linear n-type doping behavior than using dichlorosilane. Therefore it allowed an easier process control and a wider dynamic doping range. Our process is an interesting route for the epitaxy of a low-resistance emitter layer for bipolar transistor application.
Researchers ; Professionals
http://hdl.handle.net/2268/69479
10.1016/j.apsusc.2008.02.194

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