Reference : Strained silicon on wafer level by wafer bonding: materials processing, strain measur...
Scientific congresses and symposiums : Unpublished conference
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/69229
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
English
Reiche, M. [Max Planck Institut of Microstructure Physics > > > > > >]
Moutanabbir, O. [Max Planck Institut of Microstructure Physics > > > > > >]
Himcinschi, C. [Max Planck Institut of Microstructure Physics > > > > > >]
Christiansen, S. [Max Planck Institut of Microstructure Physics > > > > > >]
Erfurth, E. [Max Planck Institut of Microstructure Physics > > > > > >]
Gösele, U. [Max Planck Institut of Microstructure Physics > > > > > >]
Mantl, S. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Buca, D. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Zhao, Q. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Loo, R. [IMEC > > > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Muster, F. [Fraunhofer Institute for Mechanics of Materials > > > > > >]
Petzold, M. [Fraunhofer Institute for Mechanics of Materials > > > > > >]
2008
Yes
International
214th ECS Meeting, 2008
12-17/10/2008
ECS
Honolulu
USA
[en] Strained silicon ; Wafer bonding ; Strain relaxation ; Strain measurement
Researchers ; Professionals
http://hdl.handle.net/2268/69229

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