ORBi: Reiche M. - Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation

Reference : Strained silicon on wafer level by wafer bonding: materials processing, strain measureme...


	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	To cite this reference:	http://hdl.handle.net/2268/69229

Title :	Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
Language :	English
Author, co-author :	Reiche, M. [Max Planck Institut of Microstructure Physics > > > > > >]
	Moutanabbir, O. [Max Planck Institut of Microstructure Physics > > > > > >]
	Himcinschi, C. [Max Planck Institut of Microstructure Physics > > > > > >]
	Christiansen, S. [Max Planck Institut of Microstructure Physics > > > > > >]
	Erfurth, E. [Max Planck Institut of Microstructure Physics > > > > > >]
	Gösele, U. [Max Planck Institut of Microstructure Physics > > > > > >]
	Mantl, S. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
	Buca, D. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
	Zhao, Q. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
	Loo, R. [IMEC > > > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	Muster, F. [Fraunhofer Institute for Mechanics of Materials > > > > > >]
	Petzold, M. [Fraunhofer Institute for Mechanics of Materials > > > > > >]
Publication date :	2008
Audience :	International
Event name :	214th ECS Meeting, 2008
Event date :	12-17/10/2008
Event organizer :	ECS
Event place (city) :	Honolulu
Event country :	USA
Keywords :	[en] Strained silicon ; Wafer bonding ; Strain relaxation ; Strain measurement
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/69229

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