Reference : Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition
Scientific congresses and symposiums : Unpublished conference
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/69197
Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition
English
Takeuchi, Shotaro [IMEC > > > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Goossens, Jozefien [IMEC > > > > > >]
Caymax, Matty [IMEC > > > > > >]
Loo, Roger [IMEC > > > > > >]
2009
Yes
International
6th International Conference on Silicon Epitaxy and Heterostructures
17-22/5/2009
UCLA, ASM
Los Angeles
USA
[en] SiGe ; growth ; CVD
Researchers ; Professionals
http://hdl.handle.net/2268/69197

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