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Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition
Takeuchi, Shotaro; Nguyen, Ngoc Duy; Goossens, Jozefien et al.
20096th International Conference on Silicon Epitaxy and Heterostructures
 

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Keywords :
SiGe; growth; CVD
Disciplines :
Materials science & engineering
Author, co-author :
Takeuchi, Shotaro;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Goossens, Jozefien;  IMEC
Caymax, Matty;  IMEC
Loo, Roger;  IMEC
Language :
English
Title :
Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition
Publication date :
2009
Event name :
6th International Conference on Silicon Epitaxy and Heterostructures
Event organizer :
UCLA, ASM
Event place :
Los Angeles, United States
Event date :
17-22/5/2009
Audience :
International
Available on ORBi :
since 16 August 2010

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