Reference : Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition

	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	To cite this reference:	http://hdl.handle.net/2268/69197

Title :	Si$_1-x$Ge$_x$ growth using Si$_3$H$_8$ by low temperature chemical vapor deposition
Language :	English
Author, co-author :	Takeuchi, Shotaro [IMEC > > > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	Goossens, Jozefien [IMEC > > > > > >]
	Caymax, Matty [IMEC > > > > > >]
	Loo, Roger [IMEC > > > > > >]
Publication date :	2009
Audience :	International
Event name :	6th International Conference on Silicon Epitaxy and Heterostructures
Event date :	17-22/5/2009
Event organizer :	UCLA, ASM
Event place (city) :	Los Angeles
Event country :	USA
Keywords :	[en] SiGe ; growth ; CVD
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/69197

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