Reference : Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices
Scientific congresses and symposiums : Poster
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/69195
Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices
English
Shimizu, Yasuo [Katholieke Universiteit Leuven - KUL, Keio University and IMEC > (KUL) Department of Metallurgy and Materials Engineering and (Keio) Department of Applied Physics and Physico-Informatics > > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > > >]
Jiang, Sijia [IMEC > > > >]
Rosseel, Erik [IMEC > > > >]
Takeuchi, Shotaro [University of Nagoya > Department of Crystalline Materials Science > > >]
Everaert, Jean-Luc [IMEC > > > >]
Loo, Roger [IMEC > > > > > >]
Vandervorst, Wilfried [Katholieke Universiteit Leuven - KUL and IMEC > Department of Physics - IKS > > >]
Caymax, Matty [IMEC > > > > > >]
2010
No
International
5th International Workshop on New Group IV Semiconductor Nanoelectronics
29-30/1/2010
Tohoku University
Sendai
Japan
[en] Vapor phase doping ; Ultra shallow junction ; CMOS
Researchers ; Professionals
http://hdl.handle.net/2268/69195

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