Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices

Shimizu, Yasuo; Nguyen, Ngoc Duy; Jiang, Sijia; Rosseel, Erik; Takeuchi, Shotaro; Everaert, Jean-Luc; Loo, Roger; Vandervorst, Wilfried; Caymax, Matty

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Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices

Shimizu, Yasuo; Nguyen, Ngoc Duy; Jiang, Sijia et al.

2010 • 5th International Workshop on New Group IV Semiconductor Nanoelectronics

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Keywords :

Vapor phase doping; Ultra shallow junction; CMOS

Disciplines :

Electrical & electronics engineering

Author, co-author :

Shimizu, Yasuo; Katholieke Universiteit Leuven - KUL, Keio University and IMEC > (KUL) Department of Metallurgy and Materials Engineering and (Keio) Department of Applied Physics and Physico-Informatics

Nguyen, Ngoc Duy ; IMEC

Jiang, Sijia; IMEC

Rosseel, Erik; IMEC

Takeuchi, Shotaro; University of Nagoya > Department of Crystalline Materials Science

Everaert, Jean-Luc; IMEC

Loo, Roger; IMEC

Vandervorst, Wilfried; Katholieke Universiteit Leuven - KUL and IMEC > Department of Physics - IKS

Caymax, Matty; IMEC

Language :

English

Title :

Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices

Publication date :

2010

Event name :

5th International Workshop on New Group IV Semiconductor Nanoelectronics

Event organizer :

Tohoku University

Event place :

Sendai, Japan

Event date :

29-30/1/2010

Audience :

International

Available on ORBi :

since 16 August 2010

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