ORBi: Shimizu Yasuo - Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices

Reference : Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices


	Document type :	Scientific congresses and symposiums : Poster
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/2268/69195

Title :	Vapor phase doping for ultra shallow junction formation in advanced Si CMOS devices
Language :	English
Author, co-author :	Shimizu, Yasuo [Katholieke Universiteit Leuven - KUL, Keio University and IMEC > (KUL) Department of Metallurgy and Materials Engineering and (Keio) Department of Applied Physics and Physico-Informatics > > > > >]
	Nguyen, Ngoc Duy [IMEC > > > > >]
	Jiang, Sijia [IMEC > > > >]
	Rosseel, Erik [IMEC > > > >]
	Takeuchi, Shotaro [University of Nagoya > Department of Crystalline Materials Science > > >]
	Everaert, Jean-Luc [IMEC > > > >]
	Loo, Roger [IMEC > > > > > >]
	Vandervorst, Wilfried [Katholieke Universiteit Leuven - KUL and IMEC > Department of Physics - IKS > > >]
	Caymax, Matty [IMEC > > > > > >]
Publication date :	2010
Peer reviewed :	No
Audience :	International
Event name :	5th International Workshop on New Group IV Semiconductor Nanoelectronics
Event date :	29-30/1/2010
Event organizer :	Tohoku University
Event place (city) :	Sendai
Event country :	Japan
Keywords :	[en] Vapor phase doping ; Ultra shallow junction ; CMOS
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/69195

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Restricted access	Shimizu_Nguyen_IWNG4SCN_2010.pdf		Author postprint	310.22 kB	Request copy

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