ORBi: Goossens Jozefien - Depth resolution and surface transients in crystalline Silicon at ultra low energies

Reference : Depth resolution and surface transients in crystalline Silicon at ultra low energies


	Document type :	Scientific congresses and symposiums : Poster
	Discipline(s) :	Engineering, computing & technology : Materials science & engineering
	To cite this reference:	http://hdl.handle.net/2268/69117

Title :	Depth resolution and surface transients in crystalline Silicon at ultra low energies
Language :	English
Author, co-author :	Goossens, Jozefien [IMEC > > > >]
	Berghmans, Bart [IMEC > > > >]
	Franquet, Alexis [IMEC > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	Delmotte, Joris [IMEC > > > >]
	Geenen, Luc [IMEC > > > >]
	Richard, Olivier [IMEC > > > >]
	Bender, Hugo [IMEC > > > >]
	Vandervorst, Wilfried [IMEC > > > >]
Publication date :	2009
On invitation :	No
Audience :	International
Event name :	17th International Conference on Secondary Ion Mass Spectrometry (SIMS XVII)
Event date :	14-18/9/2009
Event organizer :	Joe Gardella, Leo Lau and Rana Sodhi
Event place (city) :	Toronto
Event country :	Canada
Keywords :	[en] Ultra low energy secondary ion mass spectrometry ; Depth resolution ; Surface transient
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/69117
Other URL :	http://www.simsxvii.org/

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