Reference : Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical v...
Scientific congresses and symposiums : Paper published in a book
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/69109
Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition
English
Takeuchi, Shotaro [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Leys, Frederik [IMEC > > > >]
Loo, Roger [IMEC > > > >]
Conard, Thierry [IMEC > > > >]
Vandervorst, Wilfried [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
2008
214th ECS Meeting, 2008
ECS
ECS Meeting Abstracts MA2008-02
Yes
No
International
2151-2043
Pennington
USA
214th ECS Meeting, 2008
12-17/10/2008
ECS
Honolulu
USA
[en] Vapor phase doping ; Type doping ; Atmospheric pressure chemical vapor deposition
Researchers ; Professionals
http://hdl.handle.net/2268/69109

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Restricted access
Takeuchi_Nguyen_ECS_Fall_2008.pdfPublisher postprint71.81 kBRequest copy

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.