Reference : Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal ...
Scientific congresses and symposiums : Poster
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/69108
Electrical characterization of InGaN/GaN multiple-quantum-well structures by thermal admittance spectroscopy
English
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Schmeits, Marcel [Université de Liège - ULg > Département de physique > > >]
Germain, Marianne [Université de Liège - ULg > Département de physique > > >]
Schineller, Bernd [AIXTRON AG > > > >]
Heuken, Michael [AIXTRON AG > > > >]
2002
Yes
International
International Workshop on Nitride Semiconductors
22-25/7/2002
Aachen
Germany
[en] InGaN ; GaN ; Quantum well ; Electrical characterization ; Admittance spectroscopy
Researchers ; Professionals
http://hdl.handle.net/2268/69108

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