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Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy
Nguyen, Ngoc Duy; Germain, Marianne; Schmeits, Marcel et al.
2001 • In Ponce, Fernando; Bell, Abigail (Eds.) ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors
Peer reviewed
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https://hdl.handle.net/2268/69107
 

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Keywords :
GaN:Mg; Schottky diode; Admittance spectroscopy; Defect level
Disciplines :
Physics
Author, co-author :
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Germain, Marianne;  Université de Liège - ULiège > Département de physique
Schmeits, Marcel;  Université de Liège - ULiège > Département de physique
Schineller, Bernd;  AIXTRON AG
Heuken, Michael;  AIXTRON AG
Language :
English
Title :
Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy
Publication date :
2001
Event name :
4th International Conference on Nitride Semiconductors
Event place :
Denver, United States
Event date :
16-20/7/2001
Audience :
International
Main work title :
ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors
Editor :
Ponce, Fernando
Bell, Abigail
Publisher :
Wiley-VCH
ISBN/EAN :
978-3527403479
Peer reviewed :
Peer reviewed
Available on ORBi :
since 13 August 2010

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