Reference : Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admitta...
Scientific congresses and symposiums : Paper published in a book
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/69107
Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy
English
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Germain, Marianne [Université de Liège - ULg > Département de physique > > >]
Schmeits, Marcel [Université de Liège - ULg > Département de physique > > >]
Schineller, Bernd [AIXTRON AG > > > >]
Heuken, Michael [AIXTRON AG > > > >]
2001
ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors
Ponce, Fernando
Bell, Abigail
Wiley-VCH
Yes
International
978-3527403479
4th International Conference on Nitride Semiconductors
16-20/7/2001
Denver
USA
[en] GaN:Mg ; Schottky diode ; Admittance spectroscopy ; Defect level
Researchers ; Professionals
http://hdl.handle.net/2268/69107

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