ORBi: Nguyen Ngoc Duy - Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy

Reference : Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance...


	Document type :	Scientific congresses and symposiums : Paper published in a book
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/2268/69107

Title :	Investigation of defect levels in Mg-doped GaN Schottky structures by thermal admittance spectroscopy
Language :	English
Author, co-author :	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
	Germain, Marianne [Université de Liège - ULg > Département de physique > > >]
	Schmeits, Marcel [Université de Liège - ULg > Département de physique > > >]
	Schineller, Bernd [AIXTRON AG > > > >]
	Heuken, Michael [AIXTRON AG > > > >]
Publication date :	2001
Main document title :	ICNS-4: Proceedings of The Fourth International Conference on Nitride Semiconductors
Editor :	Ponce, Fernando
	Bell, Abigail
Publisher :	Wiley-VCH
Audience :	International
ISBN :	978-3527403479
Event name :	4th International Conference on Nitride Semiconductors
Event date :	16-20/7/2001
Event place (city) :	Denver
Event country :	USA
Keywords :	[en] GaN:Mg ; Schottky diode ; Admittance spectroscopy ; Defect level
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/69107

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