Reference : Experimental and theoretical study of Mg-doped GaN Schottky structures by thermal admitt...

	Document type :	Scientific conferences in universities or research centers : Scientific conference in universities or research centers
	Discipline(s) :	Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/2268/69106

Title :	Experimental and theoretical study of Mg-doped GaN Schottky structures by thermal admittance spectroscopy
Language :	English
Author, co-author :	Nguyen, Ngoc Duy [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Publication date :	2001
Audience :	National
Event name :	Seminar on Gallium Nitride (invited)
Event date :	11/9/2001
Event organizer :	Technische Universiteit Eindhoven
Event place (city) :	Eindhoven
Event country :	Netherlands
Keywords :	[en] GaN ; Electrical characterization ; Admittance spectroscopy
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/69106

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