Reference : Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-sh...
Scientific congresses and symposiums : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/69101
Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology
English
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Rosseel, Erik [IMEC > > > > > >]
Takeuchi, Shotaro [IMEC > > > > > >]
Everaert, Jean-Luc [IMEC > > > > > >]
Loo, Roger [IMEC > > > > > >]
Goossens, Jozefien [IMEC > > > > > >]
Moussa, Alain [IMEC > > > > > >]
Clarysse, Trudo [IMEC > > > > > >]
Caymax, Matty [IMEC > > > > > >]
Vandervorst, Wilfried [IMEC > > > > > >]
2009
International Semiconductor Device Research Symposium, 2009
IEEE
No
Yes
International
978-1-4244-6030-4
Los Alamitos
USA
International Semiconductor Device Research Symposium, 2009
9-11/12/2009
University of Maryland
College Park
USA
[en] Vapor phase doping ; Laser anneal ; Ultra shallow junction ; CMOS
[en] The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 nm and the 22 nm technology nodes. In the case of NMOS, As-VPD and LA enable the fabrication of an USJ but the electrical deactivation of a large part of the in-diffused dopants is responsible for the high sheet resistance values.
Researchers ; Professionals
http://hdl.handle.net/2268/69101
10.1109/ISDRS.2009.5378166

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