Reference : Method for manufacturing a junction
Patent : Patent
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68992
Method for manufacturing a junction
English
[fr] Méthode de fabrication d'une jonction
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, Roger [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
1-Jul-2010
2008-12-29
McDonnell Boehnen Hulbert & Berghoff LLP
US 2010 0167446 A1
61/141, 197 US 29.12.2008
A
United States of America
IMEC, Leuven (Belgium)
H01L 21/20, H01L 21/331, H01L 21/8228, H01L 31/18
tbd
US
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR H RH UI EI SI TL IL TL UL VM CM KM TN LN OP L PT RO SE SI SK SM TR AL BA RS
[en] Junction ; Atomic layer epitaxy ; Epitaxial growth ; Bipolar transistor ; Vapor phase doping ; Atomic layer doping ; BiCMOS
[en] The present invention relates to a semiconductor device comprising a homojunction or a heterojunction with a controlled dopant (concentration) profile and a method of making the same. Accordingly, one aspect of the invention is a method for manufacturing a junction comprising forming a first semiconductor material comprising a first dopant having a first concentration and thereupon forming a second semiconductor material comprising a second dopant, having a second concentration thereby forming a junction, and depositing by Atomic Layer Epitaxy or Vapor Phase Doping at least a fraction of a monolayer of a precursor suitable to form the second dopant on the first semiconductor material, prior to forming the second semiconductor material, thereby increasing the second concentration of the second dopant at the junction.
Researchers ; Professionals ; Students ; General public
http://hdl.handle.net/2268/68992
http://www.freepatentsonline.com/y2010/0167446.html

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Open access
US 2010 0167446 A1.pdfUS Patent Application PublicationPublisher postprint237.54 kBView/Open

Additional material(s):

File Commentary Size Access
Open access
EP 2202784 A2.pdfEuropean Patent Application Publication2.35 MBView/Open

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.