Reference : Growth of III/V materials on large area silicon
Scientific journals : Article
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/68961
Growth of III/V materials on large area silicon
English
Schineller, Bernd [AIXTRON AG > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Heuken, Michael [AIXTRON AG > > > >]
2010
ECS Transactions
ECS
28
233
Yes
International
1938-5862
1938-6737
Pennington
USA
[en] Crystal growth ; III-V compound ; Large area silicon substrate
[en] Continuous miniaturization has been at the heart of advances in modern semiconductor electronics. However, further scalability has seen its limits for conventional CMOS technology due to short channel effects. To further increase the performance for the 32 and 22 nm nodes, channel engineering introducing III-V materials may be necessary. Hence, epitaxial growth and processing strategies have to be developed which combine the high complexity of an MOCVD growth chamber with the requirements of the silicon industry.
Researchers ; Professionals
http://hdl.handle.net/2268/68961
10.1149/1.3367955
http://www.electrochem.org/dl/support/assets/crtf.pdf

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