Article (Scientific journals)
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
Wang, Gang; Leys, Maarten; Nguyen, Ngoc Duy et al.
2011In Journal of Crystal Growth, 315, p. 32
Peer Reviewed verified by ORBi
 

Files


Full Text
Wang_Leys_Nguyen_JCG_315_32_2011_author_postprint.pdf
Author postprint (480.88 kB)
Download

All documents in ORBi are protected by a user license.

Send to



Details



Keywords :
InP; III-V compound; Selective epitaxial growth; STI
Abstract :
[en] In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (0 0 1) substrates 6° miscut toward (1 1 1) using a thin Ge buffer layer. We studied the impact of growth rates and steric hindrance effects on the nano-twin formation at the STI side walls. It was found that a too high growth rate induces more nano-twins in the layer and results in InP crystal distortion. The STI side wall tapering angle and the substrate miscut angle induced streric hindrance between the InP facets and the STI side walls also contribute to defect formation. In the [-1 1 0] orientated trenches, when the STI side wall tapering angle is larger than 10°, crystal distortion was observed while the substrate miscut angle has no significant impact on the InP defect formation. In the [-1 1 0] trenches, both the increased STI tapering angle and the substrate miscut angle induce high density of defects. With a small STI tapering angle and a thin Ge layer, we obtained extended defect free InP in the top region of the [1 1 0] trenches with aspect ratio larger than 2.
Disciplines :
Materials science & engineering
Author, co-author :
Wang, Gang;  IMEC
Leys, Maarten;  IMEC
Nguyen, Ngoc Duy  ;  Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Loo, Roger;  IMEC
Richard, Olivier;  IMEC
Bender, Hugo;  IMEC
Heyns, Marc;  IMEC
Caymax, Matty;  IMEC
Language :
English
Title :
Growth of high quality InP layers in STI trenches on miscut Si (001) substrates
Publication date :
2011
Journal title :
Journal of Crystal Growth
ISSN :
0022-0248
Publisher :
Elsevier Science, Amsterdam, Netherlands
Volume :
315
Pages :
32
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 13 August 2010

Statistics


Number of views
123 (6 by ULiège)
Number of downloads
429 (1 by ULiège)

Scopus citations®
 
19
Scopus citations®
without self-citations
11
OpenCitations
 
16

Bibliography


Similar publications



Contact ORBi