Reference : A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture
Scientific congresses and symposiums : Paper published in a book
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68837
A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture
English
Van Huylenbroeck, Stefaan [IMEC > > > >]
Sibaja-Hernandez, Arturo [IMEC > > > >]
Venegas, Rafael [IMEC > > > >]
You, Suzhen [IMEC > > > >]
Winderickx, Gillis [IMEC > > > >]
Radisic, Dunja [IMEC > > > >]
Lee, Willie [IMEC > > > >]
Ong, Patrick [IMEC > > > >]
Vandeweyer, Tom [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
De Meyer, Kristin [IMEC > > > >]
Decoutere, Stefan [IMEC > > > >]
2009
IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009
IEEE
5-8
Yes
International
978-1-4244-4894-4
IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009
12-14/10/2009
IEEE
Capri
Italy
[en] SiGe ; Bipolar transistor ; BiCMOS
[en] An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
Researchers ; Professionals
http://hdl.handle.net/2268/68837
10.1109/BIPOL.2009.5314244

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