ORBi: Van Huylenbroeck Stefaan - A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture

Reference : A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture


	Document type :	Scientific congresses and symposiums : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/2268/68837

Title :	A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture
Language :	English
Author, co-author :	Van Huylenbroeck, Stefaan [IMEC > > > >]
	Sibaja-Hernandez, Arturo [IMEC > > > >]
	Venegas, Rafael [IMEC > > > >]
	You, Suzhen [IMEC > > > >]
	Winderickx, Gillis [IMEC > > > >]
	Radisic, Dunja [IMEC > > > >]
	Lee, Willie [IMEC > > > >]
	Ong, Patrick [IMEC > > > >]
	Vandeweyer, Tom [IMEC > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	De Meyer, Kristin [IMEC > > > >]
	Decoutere, Stefan [IMEC > > > >]
Publication date :	2009
Main document title :	IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009
Publisher :	IEEE
Pages :	5-8
Audience :	International
ISBN :	978-1-4244-4894-4
Event name :	IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009
Event date :	12-14/10/2009
Event organizer :	IEEE
Event place (city) :	Capri
Event country :	Italy
Keywords :	[en] SiGe ; Bipolar transistor ; BiCMOS
Abstract :	[en] An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/68837
DOI :	10.1109/BIPOL.2009.5314244

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Open access	VanHuylenbroeck_Nguyen_BCTM_2009_author_postprint.pdf		Author postprint	640.2 kB	View/Open

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