A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture

Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael; You, Suzhen; Winderickx, Gillis; Radisic, Dunja; Lee, Willie; Ong, Patrick; Vandeweyer, Tom; Nguyen, Ngoc Duy; De Meyer, Kristin; Decoutere, Stefan

doi:10.1109/BIPOL.2009.5314244

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A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture

Van Huylenbroeck, Stefaan; Sibaja-Hernandez, Arturo; Venegas, Rafael et al.

2009 • In IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009

Peer reviewed

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https://hdl.handle.net/2268/68837

DOI
10.1109/BIPOL.2009.5314244

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Keywords :

SiGe; Bipolar transistor; BiCMOS

Abstract :

[en] An improved fully self-aligned SiGe:C HBT architecture featuring a single-step epitaxial collector-base process is described. An fMAX value of 400 GHz is reached by structural as well as intrinsic advancements made to the HBT device.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Van Huylenbroeck, Stefaan; IMEC

Sibaja-Hernandez, Arturo; IMEC

Venegas, Rafael; IMEC

You, Suzhen; IMEC

Winderickx, Gillis; IMEC

Radisic, Dunja; IMEC

Lee, Willie; IMEC

Ong, Patrick; IMEC

Vandeweyer, Tom; IMEC

Nguyen, Ngoc Duy ; IMEC

De Meyer, Kristin; IMEC

Decoutere, Stefan; IMEC

Language :

English

Title :

A 400GHz fMAX Fully Self-Aligned SiGe:C HBT Architecture

Publication date :

2009

Event name :

IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009

Event organizer :

IEEE

Event place :

Capri, Italy

Event date :

12-14/10/2009

Audience :

International

Main work title :

IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009

Publisher :

IEEE

ISBN/EAN :

978-1-4244-4894-4

Pages :

5-8

Peer reviewed :

Peer reviewed

Available on ORBi :

since 13 August 2010

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Bibliography

A. Fox et al, "SiGe HBT Module with 2.5ps Gate Delay", IEDM Technical Digest, pp. 731-734, 2008.
B. Geynet et al, "SiGe HBTs featuring fT > 400GHz at room temperature", BCTM Proceedings, pp. 121-124, 2008.
J. Yuan et al, "On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds", IEEE Transactions on Electrical Devices, pp. 1007-1019, 2009.
J.J.T.M. Donkers et al, "A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process", IEDM Technical Digest, pp. 655-658, 2007.