Reference : 200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by...
Scientific congresses and symposiums : Unpublished conference
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68824
200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD
English
Park, Si-Young [Ohio State University > Department of Electrical and Computer Engineering > > >]
Anisha, Ramesh [Ohio State University > Department of Electrical and Computer Engineering > > >]
Berger, Paul [Ohio State University > Department of Electrical and Computer Engineering and the Department of Physics > > >]
Loo, Roger [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Takeuchi, Shotaro [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
2009
Yes
International
6th International Conference on Silicon Epitaxy and Heterostructures
17-22/5/2009
UCLA, ASM
Los Angeles
USA
[en] Resonant Interband Tunneling Diode ; Delta-doping ; SiGe ; CVD
Researchers ; Professionals
http://hdl.handle.net/2268/68824

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