Reference : 200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by...

	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/2268/68824

Title :	200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD
Language :	English
Author, co-author :	Park, Si-Young [Ohio State University > Department of Electrical and Computer Engineering > > >]
	Anisha, Ramesh [Ohio State University > Department of Electrical and Computer Engineering > > >]
	Berger, Paul [Ohio State University > Department of Electrical and Computer Engineering and the Department of Physics > > >]
	Loo, Roger [IMEC > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	Takeuchi, Shotaro [IMEC > > > >]
	Caymax, Matty [IMEC > > > >]
Publication date :	2009
Audience :	International
Event name :	6th International Conference on Silicon Epitaxy and Heterostructures
Event date :	17-22/5/2009
Event organizer :	UCLA, ASM
Event place (city) :	Los Angeles
Event country :	USA
Keywords :	[en] Resonant Interband Tunneling Diode ; Delta-doping ; SiGe ; CVD
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/68824

	File(s) associated to this reference
	Fulltext file(s): File Commentary Version Size Access Restricted access Park_Nguyen_ICSI_2009.pdf Author postprint 138.93 kB Request copy

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