Reference : Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68823
Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs
English
You, Suzhen [IMEC > > > >]
Van Huylenbroeck, Stefaan [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Sibaja-Hernandez, Arturo [IMEC > > > >]
Venegas, Rafael [IMEC > > > >]
Van Wichelen, Koen [IMEC > > > >]
Decoutere, Stefan [IMEC > > > >]
De Meyer, Kristin [IMEC > > > >]
2009
Thin Solid Films
Elsevier Science
518
6
S68
Yes (verified by ORBi)
International
0040-6090
[en] SiGe:C HBT ; Maximum oscillation frequency ; Non-selective epitaxy
[en] This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant conditions to improve the doping of the external base poly, and using an optimized non-selective epitaxy process with improved growth rate ratio of 1.7 between the polycrystalline silicon and monocrystalline silicon of the base, the maximum oscillation frequency fmax reaches 300 GHz.
Researchers ; Professionals
http://hdl.handle.net/2268/68823
10.1016/j.tsf.2009.10.058

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