Article (Scientific journals)
Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs
You, Suzhen; Van Huylenbroeck, Stefaan; Nguyen, Ngoc Duy et al.
2009In Thin Solid Films, 518 (6), p. 68
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Keywords :
SiGe:C HBT; Maximum oscillation frequency; Non-selective epitaxy
Abstract :
[en] This paper investigates the optimization of the external polysilicon base sheet resistance of quasi self-aligned (QSA) SiGe:C HBTs from a 0.13 μm BiCMOS process. Taking advantage of optimized implant conditions to improve the doping of the external base poly, and using an optimized non-selective epitaxy process with improved growth rate ratio of 1.7 between the polycrystalline silicon and monocrystalline silicon of the base, the maximum oscillation frequency fmax reaches 300 GHz.
Disciplines :
Electrical & electronics engineering
Author, co-author :
You, Suzhen;  IMEC
Van Huylenbroeck, Stefaan;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Sibaja-Hernandez, Arturo;  IMEC
Venegas, Rafael;  IMEC
Van Wichelen, Koen;  IMEC
Decoutere, Stefan;  IMEC
De Meyer, Kristin;  IMEC
Language :
English
Title :
Optimization of external poly base sheet resistance in 0.13 µm quasi self-aligned SiGe:C HBTs
Publication date :
2009
Journal title :
Thin Solid Films
ISSN :
0040-6090
Publisher :
Elsevier Science
Volume :
518
Issue :
6
Pages :
S68
Peer reviewed :
Peer Reviewed verified by ORBi
Available on ORBi :
since 13 August 2010

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