[en] This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells created by sharp delta-doping planes which provide for a resonant tunneling condition through the intrinsic spacer. The vapor phase doping technique was used to achieve abrupt degenerate doping profiles at higher substrate temperatures than previous reports using low-temperature molecular beam epitaxy, and postgrowth annealing experiments are suggestive that fewer point defects are incorporated, as a result. The as-grown RITD samples without postgrowth thermal annealing show negative differential resistance with a recorded peak-to-valley current ratio up to 1.85 with a corresponding peak current density of 0.1 kA/cm2 at room temperature
Disciplines :
Electrical & electronics engineering
Author, co-author :
Park, Si-Young; Ohio State University > Department of Electrical and Computer Engineering
Anisha, Ramesh; Ohio State University > Department of Electrical and Computer Engineering
Berger, Paul; Ohio State University > Department of Electrical and Computer Engineering and the Department of Physics
H. Pettenghi, M. J. Avedillo, and J. M. Quintana, "New circuit topology for logic gates based on RITs," in Proc. 5th IEEE Conf. Nanotechnol. Jul. 2005, pp. 283-286.
P. Mazumder, S. Kulkarni, M. Bhattacharya, J. P. Sun, and G. I. Haddad, "Digital circuit applications of resonant tunneling devices," Proc. IEEE, vol. 86, no. 4, pp. 664-686, Apr. 1998.
J. P. A. van der Wagt, "Tunneling-based SRAM," Proc. IEEE, vol. 87, no. 4, pp. 571-595, Apr. 1999.
S. Y. Chung, N. Jin, P. R. Berger, R. Yu, P. E. Thompson, R. Lake, S. L. Rommel, and S. K. Kurinec, "3-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration," Appl. Phys. Lett., vol. 84, no. 14, pp. 2688-2690, Apr. 2004.
S. Sudirgo, R. P. Nandgaonkar, B. Curanovic, J. L. Hebding, R. L. Saxer, S. S. Islam, K. D. Hirschman, S. L. Rommel, S. K. Kurinec, P. E. Thompson, N. Jin, and P. R. Berger, "Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation," Solid State Electron., vol. 48, no. 10/11, pp. 1907-1910, Oct./Nov. 2004.
S. Sudirgo, D. J. Pawlik, S. K. Kurinec, P. E. Thompson, J. W. Daulton, S. Y. Park, R. Yu, P. R. R. Berger, and S. L. Rommel, "NMOS/SiGe resonant interband tunneling diode static random access memory," in Proc. Device Res. Conf., Jun. 2006, pp. 265-266.
N. Jin, S.-Y. Chung, R. M. Heyns, P. R. Berger, R. Yu, P. E. Thompson, and S. L. Rommel, "Tri-state logic using vertically integrated Si resonant interband tunneling diodes with double NDR," IEEE Electron Device Lett., vol. 25, no. 9, pp. 646-648, Sep. 2004.
S. Takeuchi, N. D. Nguyen, F. Leys, R. Loo, T. Conard, W. Vandervorst, and M. Caymax, "Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition," ECS Trans., vol. 16, no. 10, pp. 495-502, 2008.
Y. Kiyota, T. Nakamura, and T. Inada, "Boron δ-doping in Si using atmospheric pressure CVD," Appl. Surf. Sci., vol. 82/83, pp. 400-404, Dec. 1994.
S. Van Huylenbroeck, A. Sibaja-Hernandez, A. Piontek, L. J. Choi, M. W. Xu, N. Ouassif, F. Vleugels, K. Van Wichelen, L. Witters, E. Kunnen, P. Leray, K. Devriendt, X. Shi, R. Loo, and S. Decoutere, "Lateral and vertical scaling of a QSA HBT for a 0.13 μm 200 GHz SiGe:C BiCMOS technology," in Proc. IEEE BCTM, 2004, pp. 229-232.
D. A. Grutzmacher, T. O. Sedgwick, A. Powell, M. Tejwani, S. S. Iyer, J. Cotte, and F. Cardone, "Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere," Appl. Phys. Lett., vol. 63, no. 18, pp. 2531-2533, Nov. 1993.
N. Jin, S.-Y. Chung, A. T. Rice, P. R. Berger, P. E. Thompson, C. Rivas, R. Lake, S. Sudirgo, J. J. Kempisty, B. Curanovic, S. L. Rommel, K. D. Hirschman, S. K. Kurinec, P. H. Chi, and D. S. Simons, "Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1876-1884, Sep. 2003.
S.-Y. Chung, N. Jin, A. T. Rice, P. R. Berger, R. Yu, Z.-Q. Fang, and P. E. Thompson, "Growth temperature and dopant species effects on deep-levels Si grown by low temperature molecular beam epitaxy," J. Appl. Phys., vol. 93, no. 11, pp. 9104-9110, Jun. 2003.
S.-Y. Chung, N. Jin, R. E. Pavlovicz, P. R. Berger, R. Yu, Z. Fang, and P. E. Thompson, "Annealing effect on defects in Si grown by low temperature molecular beam epitaxy and its attribution to the excess currents in Si-based tunnel diodes," J. Appl. Phys., vol. 96, no. 1, pp. 747-753, Jul. 2004.
S. L. Rommel, T. E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck, and D. K. Blanks, "Room temperature operation of epitaxially grown Si/Si0.5 Ge0.5/Si resonant interband tunneling diodes," Appl. Phys. Lett., vol. 73, no. 15, pp. 2191-2193, Oct. 1998.
R. Duschl and K. Eberl, "Physics and applications of Si/SiGe/Si resonant interband tunneling diodes," Thin Solid Films, vol. 380, no. 1/2, pp. 151-153, Dec. 2000.
N. Jin, S.-Y. Chung, R. Yu, R. M. Heyns, P. R. Berger, and P. E. Thompson, "The effect of spacer thickness on Si-based resonant interband tunneling diode performance and their application to low-power tunneling diode SRAM circuits," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2243-2249, Sep. 2006.
S.-Y. Chung, R. Yu, N. Jin, S.-Y. Park, P. R. Berger, and P. E. Thompson, "Si/SiGe resonant interband tunnel diode with fro 20.2 GHz and peak current density 218 kA/cm2 for K-band mixed-signal applications," IEEE Electron Device Lett., vol. 27, no. 5, pp. 364-367, May 2006.
P. E. Thompson, G. G. Jernigan, S.-Y. Park, R. Yu, R. Anisha, P. R. Berger, D. Pawlik, R. Krom, and S. L. Rommel, "P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance," Electron. Lett., vol. 45, no. 14, pp. 759-761, Jul. 2009.