Reference : Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemi...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68789
Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by Chemical Vapor Deposition
English
Park, Si-Young [Ohio State University > Department of Electrical and Computer Engineering > > >]
Anisha, Ramesh [Ohio State University > Department of Electrical and Computer Engineering > > >]
Berger, Paul [Ohio State University > Department of Electrical and Computer Engineering and the Department of Physics > > >]
Loo, Roger [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Takeuchi, Shotaro [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
2009
IEEE Electron Device Letters
IEEE
30
1173
Yes (verified by ORBi)
International
0741-3106
Piscataway
NJ
[en] SiGe ; Resonant interband tunneling diode ; Vapor phase doping ; Delta-doping ; Atomic layer doping ; Tunnel effect
[en] This is the first report of a Si/SiGe resonant interband tunneling diodes (RITDs) on silicon substrates grown by the chemical vapor deposition process. The nominal RITD structure forms two quantum wells created by sharp delta-doping planes which provide for a resonant tunneling condition through the intrinsic spacer. The vapor phase doping technique was used to achieve abrupt degenerate doping profiles at higher substrate temperatures than previous reports using low-temperature molecular beam epitaxy, and postgrowth annealing experiments are suggestive that fewer point defects are incorporated, as a result. The as-grown RITD samples without postgrowth thermal annealing show negative differential resistance with a recorded peak-to-valley current ratio up to 1.85 with a corresponding peak current density of 0.1 kA/cm2 at room temperature
Researchers ; Professionals
http://hdl.handle.net/2268/68789
10.1109/LED.2009.2030989
http://dx.doi.org/10.1109/LED.2009.2030989
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