Reference : Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68775
Relaxation of strained pseudomorphic SixGe1-x layers on He-implanted Si/δ-Si:C/Si(100) substrates
English
Buca, D. [Research Center Jülich > Institute of Bio- and Nanosystems and JARA—Fundamentals of Future Information Technology > > >]
Minamisawa, R. A. [Research Center Jülich > Institute of Bio- and Nanosystems and JARA—Fundamentals of Future Information Technology > > >]
Trinkaus, H. [Research Center Jülich > Institute of Bio- and Nanosystems and JARA—Fundamentals of Future Information Technology > > >]
Holländer, B. [Research Center Jülich > Institute of Bio- and Nanosystems and JARA—Fundamentals of Future Information Technology > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, R. [IMEC > > > >]
Mantl, S. [Research Center Jülich > Institute of Bio- and Nanosystems and JARA—Fundamentals of Future Information Technology > > >]
2009
Applied Physics Letters
American Institute of Physics
95
144103
Yes (verified by ORBi)
International
0003-6951
Melville
NY
[en] SiGe ; Relaxation ; He-implantation
[en] In this letter we present a method to increase the efficiency of SiGe layer relaxation by He+ ion implantation and annealing. Preferential nucleation of He platelets along a 􏰀-impurity layer grown in the Si substrate below the SiGe layer results in planar localization and homogenization of dislocation loop sources inducing a more uniform distribution of misfit dislocations. We demonstrate this for a thin Si:C layer grown by reduced pressure chemical vapor deposition. The optimization of the conditions for efficient relaxation and layer quality is studied with respect to the position of the Si:C layer and the process parameters. Relaxation degrees up to 85% are obtained for Si0.77Ge0.23 layers.
Researchers ; Professionals
http://hdl.handle.net/2268/68775
10.1063/1.3240409

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