Reference : Strained silicon on wafer level by wafer bonding: materials processing, strain measur...
Scientific journals : Article
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68724
Strained silicon on wafer level by wafer bonding: materials processing, strain measurements and strain relaxation
English
Reiche, M. [Max Planck Institut of Microstructure Physics > > > >]
Moutanabbir, O. [Max Planck Institut of Microstructure Physics > > > >]
Himcinschi, C. [Max Planck Institut of Microstructure Physics > > > >]
Christiansen, S. [Max Planck Institut of Microstructure Physics > > > >]
Erfurth, E. [Max Planck Institut of Microstructure Physics > > > >]
Gösele, U. [Max Planck Institut of Microstructure Physics > > > >]
Mantl, S. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Buca, D. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Zhao, Q. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Loo, R. [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Muster, F. [Fraunhofer Institute for Mechanics of Materials > > > >]
Petzold, M. [Fraunhofer Institute for Mechanics of Materials > > > >]
2008
ECS Transactions
ECS
16
211
Yes
International
1938-5862
1938-6737
Pennington
USA
[en] Strained silicon ; Wafer bonding ; Strain relaxation ; Strain measurement
[en] Different methods to introduce strain in thin silicon device layers are presented. Uniaxial strain is introduced in CMOS devices by process-induced stressors allowing the local generation of tensile or compressive strain in the channel region of MOSFETs. Biaxial strain is introduced by growing thin silicon layer on SiGe buffer and transferring it to an oxidized silicon substrates. The latter forms strained silicon on insulator (SSOI) wafer characterized by tensile strain only. Future CMOS device technologies require the combination of the global strain of SSOI substrates with local stressors to increase the device performance.
Researchers ; Professionals
http://hdl.handle.net/2268/68724
10.1149/1.2982883
http://www.electrochem.org/dl/support/assets/crtf.pdf

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