Reference : Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapo...
Scientific journals : Article
Engineering, computing & technology : Materials science & engineering
http://hdl.handle.net/2268/68721
Vapor phase doping with N-type dopant into silicon by atmospheric pressure chemical vapor deposition
English
Takeuchi, Shotaro [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Leys, Frederik [IMEC > > > >]
Loo, Roger [IMEC > > > >]
Conard, Thierry [IMEC > > > >]
Vandervorst, Wilfried [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
2008
ECS Transactions
ECS
16
495
Yes
International
1938-5862
1938-6737
Pennington
USA
[en] Vapor phase doping ; Atmospheric pressure chemical vapor deposition ; n-Type doping
[en] Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer of Si, respectively. Therefore, these processes are self-limited in both cases. When a Si cap layer is grown on the P-covered Si(001), high P concentration of 3.7 × 1020 cm-3 at the heterointerface in the Si- cap/P/Si-substrate layer stacks is achieved. Due to As desorption and segregation toward the Si surface during the temperature ramp up and during the Si-cap growth, the As concentration at the heterointerface in the Si-cap/As/Si-substrate layer stacks was lower compared to the P case. These results allowed us to evaluate the feasibility of the VPD process to fabricate precisely controlled doping profiles.
Researchers ; Professionals
http://hdl.handle.net/2268/68721
10.1149/1.2986806
http://www.electrochem.org/dl/support/assets/crtf.pdf

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