Reference : Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer
Scientific congresses and symposiums : Unpublished conference
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68719
Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer
English
Buca, D. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Trinkaus, H. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Holländer, B. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Loo, R. [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Mantl, S. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
2008
Yes
International
4th International SiGe Technology and Device Meeting (ISTDM)
11-14/5/2008
Nano Device Laboratories Taiwan
Hsinchu
Taiwan
[en] He implantation ; SiGe ; Layer relaxation ; Si:C
Researchers ; Professionals
http://hdl.handle.net/2268/68719

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