Reference : Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer

	Document type :	Scientific congresses and symposiums : Unpublished conference
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/2268/68719

Title :	Improvement of He ion induced SiGe layer relaxation by a thin Si:C layer
Language :	English
Author, co-author :	Buca, D. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
	Trinkaus, H. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
	Holländer, B. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
	Loo, R. [IMEC > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	Mantl, S. [Research Center Jülich > Institute of Bio- and Nanosystems > > >]
Publication date :	2008
Audience :	International
Event name :	4th International SiGe Technology and Device Meeting (ISTDM)
Event date :	11-14/5/2008
Event organizer :	Nano Device Laboratories Taiwan
Event place (city) :	Hsinchu
Event country :	Taiwan
Keywords :	[en] He implantation ; SiGe ; Layer relaxation ; Si:C
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/68719

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