Reference : In-line characterization of hetero bipolar transistor base layers and pMOS devices wi...
Scientific congresses and symposiums : Poster
Engineering, computing & technology : Electrical & electronics engineering
http://hdl.handle.net/2268/68712
In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction
English
Hikavyy, A. [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, R. [IMEC > > > >]
Ryan, P. [Bede plc > > > >]
Wormington, M. [Bede plc > > > >]
Hopkins, J. [Bede plc > > > >]
2008
Yes
International
4th International SiGe Technology and Device Meeting (ISTDM)
11-14/5/2008
Nano Device Laboratories Taiwan
Hsinchu
Taiwan
[en] In-line characterization ; Heterojunction ; Bipolar transistor ; High-resolution X-ray diffraction
Researchers ; Professionals
http://hdl.handle.net/2268/68712

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Restricted access
Hikavyy_Nguyen_ISTDM_2008.pdfNo commentaryAuthor postprint169.17 kBRequest copy

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.