Reference : In-line characterization of hetero bipolar transistor base layers and pMOS devices with ...

	Document type :	Scientific congresses and symposiums : Poster
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering
	To cite this reference:	http://hdl.handle.net/2268/68712

Title :	In-line characterization of hetero bipolar transistor base layers and pMOS devices with embedded SiGe by high-resolution x-ray diffraction
Language :	English
Author, co-author :	Hikavyy, A. [IMEC > > > >]
	Nguyen, Ngoc Duy [IMEC > > > >]
	Loo, R. [IMEC > > > >]
	Ryan, P. [Bede plc > > > >]
	Wormington, M. [Bede plc > > > >]
	Hopkins, J. [Bede plc > > > >]
Publication date :	2008
Audience :	International
Event name :	4th International SiGe Technology and Device Meeting (ISTDM)
Event date :	11-14/5/2008
Event organizer :	Nano Device Laboratories Taiwan
Event place (city) :	Hsinchu
Event country :	Taiwan
Keywords :	[en] In-line characterization ; Heterojunction ; Bipolar transistor ; High-resolution X-ray diffraction
Target :	Researchers ; Professionals
Permalink :	http://hdl.handle.net/2268/68712
	also: http://hdl.handle.net/2268/68713

	File(s) associated to this reference
	Fulltext file(s): File Commentary Version Size Access Restricted access Hikavyy_Nguyen_ISTDM_2008.pdf No commentary Author postprint 169.17 kB Request copy

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