Reference : Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling
Scientific congresses and symposiums : Poster
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/68702
Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling
English
Takeuchi, Shotaro [IMEC > > > >]
Yang, Lijun [IMEC > > > >]
Nguyen, Ngoc Duy mailto [IMEC > > > >]
Loo, Roger [IMEC > > > >]
Conard, Thierry [IMEC > > > >]
Pourtois, Geoffrey [IMEC > > > >]
Vandervorst, Wilfried [IMEC > > > >]
Caymax, Matty [IMEC > > > >]
2008
No
International
4th International Workshop on New Group IV Semiconductor Nanoelectronics
25-27/9/2008
Tohoku University
Sendai
Japan
[en] Atomic layer epitaxy ; Atomic layer doping ; Phosphorus ; Arsenic
Researchers ; Professionals
http://hdl.handle.net/2268/68702

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