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Fabrication, characterization, and modeling of strained SOI MOSFETs with very large effective mobility
Driussi, F.; Esseni, D.; Selmi, L. et al.
2007In IEEE (Ed.) 37th European Solid State Device Research Conference (ESSDERC)
Peer reviewed
 

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Keywords :
Strained SOI; MOSFET; Mobility
Abstract :
[en] Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
Disciplines :
Electrical & electronics engineering
Author, co-author :
Driussi, F.;  University of Udine > DIEGM
Esseni, D.;  University of Udine > DIEGM
Selmi, L.;  University of Udine > DIEGM
Schmidt, M.;  Advanced Microelectronic Center Aachen
Lemme, M. C.;  Advanced Microelectronic Center Aachen
Kurze, H.;  Advanced Microelectronic Center Aachen
Buca, D.;  Center of Nanoelectronic Systems for Information Technology > Institute of Bio- and Nanosystems
Mantl, S.;  Center of Nanoelectronic Systems for Information Technology > Institute of Bio- and Nanosystems
Luysberg, M.;  Center of Nanoelectronic Systems for Information Technology > Institute of Bio- and Nanosystems
Loo, R.;  IMEC
Nguyen, Ngoc Duy  ;  IMEC
Reiche, M.;  Max Planck Institut für Mikrostrukturphysik
Language :
English
Title :
Fabrication, characterization, and modeling of strained SOI MOSFETs with very large effective mobility
Publication date :
2007
Event name :
37th European Solid State Device Research Conference (ESSDERC)
Event organizer :
IEEE
Event place :
Munich, Germany
Event date :
11-13/9/2007
Audience :
International
Main work title :
37th European Solid State Device Research Conference (ESSDERC)
Editor :
IEEE
ISBN/EAN :
978-1-4244-1123-8
Pages :
315 - 318
Peer reviewed :
Peer reviewed
Available on ORBi :
since 12 August 2010

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