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GaN:Mg; Deep impurity; Dopant; Admittance spectroscopy
Abstract :
[en] The effect of the deep acceptor Mg on the electrical characteristics of p-doped GaN Schottky diodes is analyzed. The theoretical study is based on the numerical resolution of the basic semiconductor equations, including the continuity equation for the Mg-related acceptor level. It gives the steady-state and small-signal analysis of p-doped GaN:Mg Schottky diodes, yielding as final result the frequency dependent capacitance and conductance of the structure. It is shown that the low-frequency characteristics are determined by the carrier exchange between the Mg related impurity level and the valence band, whereas above the impurity transition frequency, the hole modulation of the depletion layer edge governs the electrical response. Detailed results are shown on the effect of temperature, applied steady-state voltage and series resistance. The study of two back-to-back connected GaN Schottky diodes reveals the appearance of typical features in the electrical characteristics, depending on the respective Schottky barrier height of the two junctions.
Disciplines :
Physics
Author, co-author :
Schmeits, Marcel; Université de Liège - ULiège > Département de physique
Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures
Germain, Marianne; Université de Liège - ULiège > Département de physique
Language :
English
Title :
Competition between deep impurity and dopant behavior of Mg in GaN Schottky diodes
Publication date :
2001
Journal title :
Journal of Applied Physics
ISSN :
0021-8979
eISSN :
1089-7550
Publisher :
American Institute of Physics, Melville, United States - New York