Characterization of CuInTe2 thin films prepared by flash evaporation

Thin films of CuInTe2 were grown by flash evaporation. The influence of the substrate temperature Ts during film deposition on the properties of the thin films was examined. CuInTe2 films were structurally characterized by the grazing incidence x-ray diffraction (GIXD) technique. Investigation by this technique demonstrates that the surface of thin films of CuInTe2 prepared by flash vaporation at Ts > 100 °C exhibits the chalcopyrite structure with additional binary compounds in the surface. However, in the volume the films exhibit the chalcopyrite structure only; no foreign phases were observed. X-ray reflectometry was utilized to evaluate the critical reflection angle bc of CuInTe2 (bCuInTe2 c 0.32°) which permitted us to calculate the density of the films to be 6 g cm−3. The evaporated films were p type and the films deposited at Ts = 100 °C had a resistivity in the range 0.3–2 cm. From optical measurements we have determined the optical energy gap Eg 0.94 eV and the effective reduced mass m*r 0.07me .