ORBi: Lousberg Grégory - Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs

Reference : Experimental and simulation study of the Schottky barrier lowering by substrate doping v...


	Document type :	Scientific congresses and symposiums : Paper published in a book
	Discipline(s) :	Engineering, computing & technology : Electrical & electronics engineering Physical, chemical, mathematical & earth Sciences : Physics
	To cite this reference:	http://hdl.handle.net/2268/23642

Title :	Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs
Language :	English
Author, co-author :	Lousberg, Grégory [Université de Liège - ULg & Interuniversity MicroElectronics Center (IMEC) > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Electronique et microsystèmes > 3ème tech. >]
	Yu, Hong-Yu [ > > ]
	Froment, Benoit [ > > ]
	Li, M.-F. [ > > ]
	Augendre, E. [ > > ]
	De Keersgieter, A. [ > > ]
	Demeurisse, C. [ > > ]
	Brus, S. [ > > ]
	Degroote, B. [ > > ]
	Hoffman, T. [ > > ]
	Lauwers, A. [ > > ]
	DePotter, M. [ > > ]
	Kubicek, S. [ > > ]
	Anil, K. [ > > ]
	Jurczak, M. [ > > ]
	Biesemans, S. [ > > ]
Publication date :	Sep-2006
Main document title :	Proceedings of ESSDERC 2006
Peer reviewed :	Yes
Audience :	International
Event name :	Solid-State Device Research Conference, 2006. ESSDERC 2006.
Abstract :	[en] In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The authors demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p-SOI SBFETs performance
Permalink :	http://hdl.handle.net/2268/23642

File(s) associated to this reference

Fulltext file(s):

	File	Commentary	Version	Size	Access
Open access	ESSDERC.pdf		Publisher postprint	1.17 MB	View/Open

All documents in ORBi are protected by a user license.