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Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs
Lousberg, Grégory; Yu, Hong-Yu; Froment, Benoit et al.
2006In Proceedings of ESSDERC 2006
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Abstract :
[en] In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The authors demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p-SOI SBFETs performance
Disciplines :
Physics
Electrical & electronics engineering
Author, co-author :
Lousberg, Grégory ;  Université de Liège - ULiège & Interuniversity MicroElectronics Center (IMEC) > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Electronique et microsystèmes > 3ème tech.
Yu, Hong-Yu
Froment, Benoit
Li, M.-F.
Augendre, E.
De Keersgieter, A.
Demeurisse, C.
Brus, S.
Degroote, B.
Hoffman, T.
Lauwers, A.
DePotter, M.
Kubicek, S.
Anil, K.
Jurczak, M.
Biesemans, S.
More authors (6 more) Less
Language :
English
Title :
Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi Source/Drain SBFETs
Publication date :
September 2006
Event name :
Solid-State Device Research Conference, 2006. ESSDERC 2006.
Audience :
International
Main work title :
Proceedings of ESSDERC 2006
Peer reviewed :
Peer reviewed
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