The effect of self-affine fractal roughness of wires on atom chips

[en] Atom chips use current flowing in lithographically patterned wires to produce microscopic magnetic traps for atoms. The density distribution of a trapped cold atom cloud reveals disorder in the trapping potential, which results from meandering current flow in the wire. Roughness in the edges of the wire is usually the main cause of this behaviour. Here, we point out that the edges of microfabricated wires normally exhibit self-affine roughness. We investigate the consequences of this for disorder in atom traps. In particular, we consider how closely the trap can approach the wire when there is a maximum allowable strength of the disorder. We comment on the role of roughness in future atom--surface interaction experiments.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Moktadir, Zakaria

Darquié, B.

Kraft, Michaël ; Université de Liège - ULiège > Dép. d'électric., électron. et informat. (Inst.Montefiore) > Systèmes microélectroniques intégrés

Hinds, Edward A.

Language :

English

Title :

The effect of self-affine fractal roughness of wires on atom chips

Publication date :

2007

Journal title :

Journal of Modern Optics

ISSN :

0950-0340

eISSN :

1362-3044

Publisher :

Taylor & Francis Ltd

Volume :

Issue :

13-15

Pages :

2149-2160

Peer reviewed :

Peer Reviewed verified by ORBi

Additional URL :

http://www.tandfonline.com/doi/abs/10.1080/09500340701427151

Available on ORBi :

since 21 October 2015

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