Reference : Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and a...
Scientific journals : Article
Physical, chemical, mathematical & earth Sciences : Physics
http://hdl.handle.net/2268/178856
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
English
Baert, Bruno mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Gupta, Somya [Katholieke Universiteit Leuven - KUL > > > >]
Gencarelli, Federica [Katholieke Universiteit Leuven - KUL > > > >]
Loo, Roger [IMEC > > > >]
Simoen, Eddy [IMEC > > > >]
Nguyen, Ngoc Duy mailto [Université de Liège - ULg > Département de physique > Physique des solides, interfaces et nanostructures >]
Aug-2015
Solid-State Electronics
Pergamon Press - An Imprint of Elsevier Science
110
65-70
Yes (verified by ORBi)
International
0038-1101
[en] GeSn ; diodes ; electrical characteristics ; I-V characteristics ; C-V characteristics ; numerical simulation ; impedance spectroscopy ; admittance spectroscopy
Fonds de la Recherche Scientifique (Communauté française de Belgique) - F.R.S.-FNRS
Researchers ; Professionals
http://hdl.handle.net/2268/178856
10.1016/j.sse.2015.01.007

File(s) associated to this reference

Fulltext file(s):

FileCommentaryVersionSizeAccess
Open access
SSE_B_Baert_GeSn_diodes.pdfPublisher postprint312.66 kBView/Open

Bookmark and Share SFX Query

All documents in ORBi are protected by a user license.