[en] Complex oxide heterostructures display some of the most chemically abrupt, atomically
precise interfaces, which is advantageous when constructing new interface phases with
emergent properties by juxtaposing incompatible ground states. One might assume that
atomically precise interfaces result from stoichiometric growth. Here we show that the most
precise control is, however, obtained by using deliberate and specific non-stoichiometric
growth conditions. For the precise growth of Srnþ1TinOnþ1 Ruddlesden–Popper (RP) phases,
stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing
with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the
subsurface RP structure. Our results dramatically expand the materials that can be prepared
in epitaxial heterostructures with precise interface control—from just the n¼N end
members (perovskites) to the entire RP homologous series—enabling the exploration of novel
quantum phenomena at a richer variety of oxide interfaces.
Disciplines :
Physics
Author, co-author :
Nie, Y. F.; Cornell University > Department of Materials Science and Engineering
Zhu, Y.; Cornell University > School of Applied and Engineering Physics
Lee, C.-H.; Cornell University > Department of Materials Science and Engineering
Kourkoutis, L. F.; Cornell University > School of Applied and Engineering Physics
Mundy, J. A.; Cornell University > School of Applied and Engineering Physics
Junquera, Javier; Universidad de Cantabria > Departamento de Ciencias de la Tierra y F´ısica de la Materia Condensada
Ghosez, Philippe ; Université de Liège - ULiège > Département de physique > Physique théorique des matériaux
Baek, D. J.; Cornell University > School of Electrical and Computer Engineering
Sung, S.; Cornell University > School of Applied and Engineering Physics
Xi, X. X.; Temple University > Department of Physics
Shen, K. M.; Cornell University > Department of Physics
Muller, D. A.; Cornell University > School of Applied and Engineering Physics
Schlom, D. G.; Cornell University > Department of Materials Science and Engineering
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