Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition

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Wang, Wei; Shimura, Yosuke; Nieddu, Thomas et al.

2013 • The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)

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https://hdl.handle.net/2268/146617

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Disciplines :

Physical, chemical, mathematical & earth Sciences: Multidisciplinary, general & others

Author, co-author :

Wang, Wei; IMEC

Shimura, Yosuke; IMEC

Nieddu, Thomas ; Université de Liège - ULiège > 2e an. master sc. phys., fin. appr.

Gencarelli, Federica; IMEC

Vincent, Benjamin; IMEC

Nguyen, Ngoc Duy ; Université de Liège - ULiège > Département de physique > Physique des solides, interfaces et nanostructures

Vandervorst, Wilfried; IMEC

Loo, Roger; IMEC

Language :

English

Title :

Composition and Thickness Dependence of GeSn Growth by Chemical Vapor Deposition

Publication date :

04 June 2013

Event name :

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8)

Event place :

Fukuoka, Japan

Event date :

2-7 juin 2013

Audience :

International

Available on ORBi :

since 10 April 2013

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