Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires

[en] The Raman spectrum of gallium oxide (beta-Ga2O3) nanowires with [001] growth direction is identical to that of the bulk Ga2O3 [Y. C. Choi Adv. Mater. 12, 746 (2000)] while that of beta-Ga2O3 nanowires with [40 (1) over bar] growth direction is redshifted by 4-23 cm(-1) [Y. H. Gao Appl. Phys. Lett. 81, 2267 (2002)]. Here we report the Raman and Fourier transform infrared spectra of beta-Ga2O3 nanowires with [110] growth direction which is blueshifted relative to the bulk spectra by similar to 10-40 cm(-1). Based on a first principles calculation of the strain dependence of Raman mode frequencies in bulk beta-Ga2O3, we correlate the observed frequency shifts to growth-direction-induced internal strains in the nanowires. (c) 2005 American Institute of Physics.

Disciplines :

Physics

Author, co-author :

RAO, Rita Flora ; Centre Hospitalier Universitaire de Liège - CHU > Salle maternité NDB

Rao, A. M.

Xu, Bin

Dong, J.

Sharma, S.

Sunkara, M. K.

Language :

English

Title :

Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires

Publication date :

2005

Journal title :

Journal of Applied Physics

ISSN :

0021-8979

eISSN :

1089-7550

Publisher :

Amer Inst Physics, Melville, United States - New York

Volume :

Issue :

Peer reviewed :

Peer Reviewed verified by ORBi

Available on ORBi :

since 07 January 2013

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